1 | Tool | Material Available | Temperature range (C) | Chuck Size | Chuck Rotation | Substrate | Sputtering Mode | Bias | # of Guns | Gases | Loadlock | Features | Disadvantage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2 | Unifilm Sputterer | Ti, Cu, Al, Au, Cr, Pt, Ni, Fe, Al/1%Si, Si, W, Mo, Ta, Ag | RT | 6" | Yes Spin and swing | up to three 4” or 6" wafers per run | DC | No | 4 | Ar | Yes | Excellent uniformity, touch screen control, four targets installed, cyro pump, wide range of targets for use, Unique Load Lock system | Busy tool, heavy usage, scheduling in advance, DC sputtering only |
3 | Denton Discovery DC/RF Sputterer | Cu, Ti, Al, Cr, ITO, SiO2, Si, Al203 | RT to 400 C | 6" | Yes Spin | up to three 4” wafers or a 6" wafer per run | DC, RF | Yes | 4 | Ar, O2, N2 | Yes | Four tagets installed, Reactive sputtering with N2 or O2, 1 RF and 3 DC sputtering, Turbo pump, computer controlling program, heater available | Slow heating and cooling, only station 1 is configured with DC and RF. |
4 | Denton Discovery 2 | Nb, LiNbO2, etc | RT | 6" | Yes Spin | up to three 4” wafers per run | DC, RF | No | 3 | Ar | No | Fixed Nb target, Fixed LiNbO2 targets,Target #3 is exchangeable, Cr, Ti, Reactive Sputtering, Touch screen control | Limited targets available, Limited to a research group onl |
5 | CVC DC Sputterer | Ti, Cu, Al, Cr, W, Mo, Ta, Ag | RT | 6" | Yes Rotation | up to six 4” or 6" wafers per run | DC | No | 4 | Ar | No | two 3” guns , two 6” guns for rapid sputtering, Batch deposition system for up to 6 wafers | Open lid loading, DC mode only. |
6 | AJA Nitride Sputterer | Al, Ti, AlN, TiN, Mo, W, Ta, TaN | RT to 800 C | 4" | Yes Spin | one 4" wafer | DC, RF | Yes | 4 | Ar, N2 | Yes | Four magnetron sputtering guns available, DC and RF mode, Capable of pulsed dc, Reactive sputtering, Max Temperature: 800°C, High vacuum permissible, RF bias up to 50W, co-deposition available. | Slow heating and cooling, \Loading and unloading challenging |
7 | PVD 75 RF Sputterer | Ti, Cu, ITO, ZnO, SiO2, Al203, Si | RT | 12" | Yes Spin | single substrate up to 12" wafer, or multiple 4" wafers | RF | No | 2 | Ar | No | Two magnetron sputtering guns available, RF mode only, Flexible sample mounting. | Film uniformity poor, max power 325W, no heating. |
8 | Chalcogenide Materials Sputterer | GeSbT GeTe | RT | 4" | No | one 4" wafer | RF | No | 2 | Ar | No | two 3” RF guns, Power supply up to 500W, Gases: N2 and Ar | Toxic target, Need extra long purging |