1 | Tool | Process | Gases Available | RF frequency | Pressure Range | Max Power | Platen Material | Platen Size | Substrate Size | Loadlock | Thermal Oxide Etch Rate | Selectivity vs PR | Features | Disadvantage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2 | Ctr Layer RIE 2 | Dielectric (SiO2, Si3N4) Etch Descum | Ar, N2, O2,CHF3, SF6, H2 | 13.56 MHZ | 10-800 mTorr | 600 W | Graphite | 12 | Pieces-10"wafer | No | 30 nm/min | 2:1 | The CtrLayer RIE 2 can accommodate four 4" inch wafers at a time. Very uniform etching across the wafer. It has a graphite platen in order to reduce temperature build up during a long process run. Clean process between the runs avoid cross contaminations between the processing batches. | Busy tool, heavy usage, scheduling in advance, open lid loading | |
3 | Ctr Layer RIE 1 | Dielectric (SiO2, Si3N4) Etch Descum | Ar, N2, O2,CHF3, SF6, H2 | 13.56 MHZ | 10-800 mTorr | 600 W | Graphite | 12 | Pieces-10"wafer | No | 24 nm/min | 1.3:1 | The CtrLayer RIE 1 can accommodate four 4" inch wafers at a time. Very uniform etching across the wafer. It has a graphite platen in order to reduce temperature build up during a long process run. Clean process between the runs avoid cross contaminations between the processing batches. | Busy tool, heavy usage, scheduling in advance, open lid loading | |
4 | Oxford End point RIE | SiO2, Si3N4, Descum, Si Shallow etch | Ar, O2, CHF3, CF4 | 13.56 MHZ | 5-500 mTorr | 500 W | Graphite Al | 10 | Pieces-8"wafer | No | 36 nm/min | 1.2:1 | Oxford RIE has Aluminum and graphite planten, to chose based on the process requirements. Very uniform etching across the wafer. Clean process between the runs avoid cross contaminations between the processing batches. | Busy tool, heavy usage, scheduling in advance, open lid loading | |
5 | Unaxis RIE | Dielectric (SiO2, Si3N4) Etch Descum | Ar, O2, CHF3 | 13.56 MHZ | 10-800 mTorr | 500 W | Al | 10 | Pieces-8"wafer | No | 37 nm/min | 1.3:1 | Very uniform etching across the wafer. Clean process between the runs avoid cross contaminations between the processing batches. | Open lid loading | |
6 | Plasma Therm RIE | Dielectric (SiO2, Si3N4) Etch Descum | Ar, O2, CHF3 | 13.56 MHZ | 10-800 mTorr | 500 W | Al | 4 | Pieces-4"wafer | No | 37 nm/min | 1.2:1 | Plasma Therm RIE has two chambers that are used for the etching of dielectrics and metals such as Al, Cr, and Ti. It can accommdated four 4" wafers at a time.Clean process between the runs avoid cross contaminations between the processing batches. | Process operates at high chamber pressures |