5.11 Tystar11 - 11SDLTON

	A	B	C	I
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2	Tystar11 - 11SDLTON
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4	Process Specification			Process Performance
5	Tool Name:	Tystar11
6	Description:	This monitor tracks oxide thickness and uniformity.
7	Description:	This monitor tracks oxide thickness and uniformity.
8	Recipe:	11SDLTON
9	Layer Material:	Doped silcon oxide
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11	Targeted Results:
12		Target	Description
13	Thickness [A]:	4000-4500	Measured using nanoduv
14	Thickness [A]:	4000-4500	Measured using nanoduv
15	Uniformity [%]:	>90%	Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
16	Uniformity [%]:	>90%
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18	Process Conditions:
19	Deposition:
20	O2 [sccms]:		135
21	PH3 [sccms]:		25
22	SiH4 [sccms]:		90
23	Temperature [degrees C]:		450
24	Time [HH:MM:SS]:		00:30:00
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26	QM Process Procedure:
27	Step	Tool	Description
28	Stock Wafer	New Wafer	6-inch P-Type Test Wafer
29	Oxide Growth	Tystar11	30 minute oxide growth
30	Anneal	tystar2	30 minute anneal at 950 degrees
31	Film Thickness / RI	nanoduv	5-point film thickness/RI
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