5.11 Tystar11 - 11SDLTON

	A	B	C	I
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2	Tystar11 - 11SDLTON
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4	Process Specification			Process Performance
5	Tool Name:	Tystar11
6	Description:	This monitor tracks oxide thickness and uniformity.
7	Description:	This monitor tracks oxide thickness and uniformity.
8	Recipe:	11SDLTON
9	Layer Material:	Doped silcon oxide
10
11	Targeted Results:
12		Target	Description
13	Thickness [A]:	4000-4500	Measured using nanoduv
14	Thickness [A]:	4000-4500	Measured using nanoduv
15	Uniformity [%]:	>90%	Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
16	Uniformity [%]:	>90%
17
18	Process Conditions:
19	Deposition:
20	O2 [sccms]:		135
21	PH3 [sccms]:		25
22	SiH4 [sccms]:		90
23	Temperature [degrees C]:		450
24	Time [min]:		30
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26	QM Process Procedure:
27	Step	Tool	Description
28	Stock Wafer	New Wafer	6-inch P-Type Test Wafer
29	Stress 1	flexus	Initial stress test
30	Nitride Growth	Tystar9	30 minute nitride growth
31	Backside Etch	technics-c	5-point film thickness/RI
32	Stress 2	flexus	Final stress test
33	Oxide Growth	Tystar2	1kA Oxide Growth
34	FT1	nanoduv	5-point film thickness/RI
35	Backside etch	technics-c	Clear backside
36	Flexus2	flexus	Final stress measurement
37	FTIR	ftir	Molecular spectrum measurement
38
39	Latest FTIR Measurement:		08-28-2018
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