5.11 Tystar11 - 11SDLTON
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Tystar11 - 11SDLTON
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Process Specification
Process Performance
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Tool Name:Tystar11
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Description: This monitor tracks oxide thickness and uniformity.
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Recipe:11SDLTON
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Layer Material: Doped silcon oxide
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Targeted Results:
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TargetDescription
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Thickness [A]:4000-4500Measured using nanoduv
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Uniformity [%]:>90%Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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Process Conditions:
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Deposition:
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O2 [sccms]:135
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PH3 [sccms]:25
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SiH4 [sccms]:90
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Temperature [degrees C]:
450
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Time [min]:30
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QM Process Procedure:
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StepToolDescription
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Stock WaferNew Wafer6-inch P-Type Test Wafer
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Stress 1flexus
Initial stress test
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Nitride GrowthTystar930 minute nitride growth
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Backside Etchtechnics-c5-point film thickness/RI
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Stress 2flexusFinal stress test
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Oxide GrowthTystar21kA Oxide Growth
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FT1nanoduv5-point film thickness/RI
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Backside etchtechnics-cClear backside
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Flexus2flexusFinal stress measurement
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FTIRftir
Molecular spectrum measurement
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Latest FTIR Measurement:08-28-2018
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