6.52 ALN2 PM2 Sputter QM
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PVD - ALN2 PM2 - ALN Sputter
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Process Specification
Process Performance
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Tool Name:ALN2 - PM2
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Description: This monitor tracks the sputter depostion of Al thickness, uniformity, reflectivity, and the health of the target.
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Recipe:PM2_ALN_Monitor
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Layer Material: Aluminum Nitride
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Targeted Results:
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TargetDescription
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Thickness [A]:9700A5 point avg calculated using Nanospec program 105.
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Uniformity [%]:<5Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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FWHM<1.5 degreesXdif measurement around 18 degrees
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Stress+/- 150 MPaFlexus stress measurement
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Tool Health Monitoring
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Critical Value (Must Exceed)ActionDescription
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Base PressureLess than 5E-7Enter problem in Mercury
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Target Current: [A]>15AInvestigate TargetIndicates health of target assembly. Ampacity spike associated with shielding degradation. Check through viewport for charring.
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Process Conditions:
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Sputter Deposition:
Conditioning:
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Ar [sccm]:7
Argon Flow [sccm]:
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N2 [sccm]:20Power [kW]:5.5
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Power [kW]:4.5Time [sec]: 120
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Time [sec]: 1430Notes: 30 second pulse of 7/22 sccm Ar/N2 poison recipe at end of condition
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QM Process Procedure:
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StepToolDescription
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Stock Wafer-Bare Si P-type Test wafer + conditioning wafer
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Flexus1FlexusPre-sputter Flexus (at both 0 & 90 degrees)
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SputterALN2 - PM2Monitor Sequence. Place in AlN Monitor slot and make slot active.
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-- Be sure to place a conditioning wafer in the Conditioning sequence slot before the QM wafer
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FT1NanospecNanospec program 105
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Flexus2FlexusPost-sputter flexus. Record 0 & 90 degrees stress data
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xdifxdifPass off for xdif
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