6.53 ALN2 PM3 Sputter QM
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PVD - ALN2 PM3 - AL Sputter
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Process Specification
Process Performance
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Tool Name:ALN2 - PM3
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Description: This monitor tracks the sputter depostion of Al thickness, uniformity, reflectivity, and the health of the target.
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Recipe:STD_Al_Monitor
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Layer Material: Aluminum
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Targeted Results:
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TargetDescription
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Thickness [A]:75005 point avg calculated using sheet resistance data from cde-resmap. Resistivity assumed constance unless reflectance changes.
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Uniformity [%]:<5Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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Reflectivity [%]:200%5 point avg of reflectivity referenced to p-type Si test wafer. Nanospec program.
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Tool Health Monitoring
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Critical ValueActionDescription
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Base PressureLess than 5E-7Investigate Target
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Target Voltage: [V]Investigate TargetIndicates health of target assembly. Voltage drop expected to track with deposition constant.
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Process Conditions:
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Sputter Etch:
Sputter Deposition:
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Base Pressure [Torr]:
Argon Flow [sccm]:
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Argon Flow [sccm]:Power [kW]:4
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Power [W]:300Time [sec]: 120
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Time [sec]: 120
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QM Process Procedure:
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StepToolDescription
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Stock WaferTystar2:1kA Thermal Oxide
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Flexus1FlexusPre-sputter Flexus (at both 0 & 90 degrees)
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SputterALN2 - PM3Monitor Sequence. Place in Al Monitor slot (Al stock wafers in the same run if needed) and make slot(s) active.
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--Run a dummie to prime the chamber. Undecided if to be included at present
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Sheet ResistanceCDE Resmap5 point sheet resistance.
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Flexus2FlexusPost-sputter flexus. Record 0 & 90 degrees stress data
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ReflectanceNanospec5 point reflectance measurement. 780nm & 640nm.
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