5.1 Tystar1 - 1GATEOXA
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Tystar1- 1GATEOXA
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Process Specification
Process Performance
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Tool Name:Tystar1
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Description: This monitor tracks oxide thickness, RI, dep rate, and the uniformity of the deposition.
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Recipe:1GATEOXA
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Layer Material: Oxide
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Targeted Results:
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TargetDescription
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Thickness [A]:300
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Non-uniformity [%]:<5Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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Process Conditions:
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Oxidation:
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O2 [sccm]:9000
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Temperature [degrees C]:
950
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Time [HH:MM:SS]:00:45:00
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Anneal:
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N2 flow [sccms]: 9000
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Temp [degrees C]950
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Time [HH:MM:SS]:00:20:00
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QM Process Procedure:
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StepToolDescription
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Stock WaferNew Wafer6-inch P-Type Test Wafer
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Oxide GrowthTystar145 minute dry oxide growth
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FT1nanoduv5-point film thickness/RI
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SCAscaSurface carrier lifetime measure
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