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ABCDEFGHIJKLMNO
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Intrinsic carrier concentration
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ParameterDescriptionValueEg, eVB, cm^-3 . K^-3/2
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[ B ], cm^(-3) . K^(-3/2)coef. related to specific semicond. materialSi1.15.23E+15
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[ T ], Ktemperature in Kelvin0 to 400 (typical)GaAs1.4210000000000000
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[ Eg ], eVenergy bandgap1.1 (Si), 1.4 (GaAs), 0.66 (Ge)Ge0.661.66E+15
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[ k ], eV / KBoltzmann constant86 * 10^-6
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Concentration of silicon atoms 5 * 10^22 cm^-3
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T, KT^3/2, KT, oC
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Eg > 3 to 6 eV => insulator4008000127 ºC
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Eg << 1 eV => conductor3005196.15242327 ºC
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Eg in order of 1 eV => semiconductors1001000-173 ºC
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Result*10^10k, eV / K0.000086
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n_i (Si), cm^-3 @ 300 K149957389491.499573895ok
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n_i (GaAs), cm^-3 @ 300 K1797701.4110.0001797701411ok
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n_i (Ge), cm^-3 @ 300 K240359089624912403.590896ok
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n_i (Si), cm^-3 @ 100 K0.00000000087872825360
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n_i (GaAs), cm^-3 @ 100 K00
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n_i (Ge), cm^-3 @ 100 K35.918635410.000000003591863541
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n_i (Si), cm^-3 @ 400 K4763540930707476.3540931
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n_i (GaAs), cm^-3 @ 400 K24429893210.2442989321
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n_i (Ge), cm^-3 @ 400 K90573470782960690573.47078
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