5.9 Tystar9 - 9SNITA
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Tystar9 - 9SNITA
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Process Specification
Process Performance
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Tool Name:Tystar9
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Description: This monitor tracks nitride thickness, deposition rate, and tensile strength.
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Recipe:9SNITA
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Layer Material: Nitride
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Targeted Results:
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TargetDescription
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Thickness [A]:1000
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Non-uniformity [%]:<5Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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Process Conditions:
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Oxidation:
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NH3 [sccm]:75
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DCS [sccm]:25
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Temperature [degrees C]:
800
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Time [min]:30
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QM Process Procedure:
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StepToolDescription
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Stock WaferNew Wafer6-inch P-Type Test Wafer
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Stress 1flexus
Initial stress test
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Nitride GrowthTystar930 minute nitride growth
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Backside Etchtechnics-c5-point film thickness/RI
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Stress 2flexusFinal stress test
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Oxide GrowthTystar21kA Oxide Growth
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FT1nanoduv5-point film thickness/RI
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Backside etchtechnics-cClear backside
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Flexus2flexusFinal stress measurement
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FTIRftir
Molecular spectrum measurement
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Latest FTIR Measurement:10-18-2018
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