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SiO2 LDR 100C
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Sequence ContentsSiO2 pre dep 100C-SEQUENCESiO2 LDR 100C Gas StabSiO2 LDR 100C IgnitionSiO2 LDR 100C DepPost Dep PD-Purge-SEQUENCE
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Process stepPreDep100C PumpdownPreDep100C O2Ar Gas StabPreDep100C O2Ar IgnitionPreDep100C O2Ar PlasmaPreDep100C PumpdownSiO2 LDR 100C Gas StabSiO2 LDR 100C IgnitionSiO2 LDR 100C DepPost Process FlushPost Process Pumpdown
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Parameter
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Process time (sec)301539030156As required3030
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Pressure (mTorr)05550555100
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Temperature2 (deg C)100100100100100100100100100100
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RF1 Forward Power (W)001300001501500
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RF2 Forward Power (W)006006000080080000
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SiH4 100% (sccm)555
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N2 500 (sccm)100
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AR 100 (sccm)505050202020
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O2 100 (sccm)151515
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Temperature1=40 C
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Temperature3=40 C
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Helium Cooler Pressure Setpint=5000mTorr
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