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CMP Removal Rate, Non-Uniformity and Roughness Monitor
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Process Specification
Process Performance
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Tool Name:cmp
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Description: This monitor tracks the RR, NU% and roughness of SiO2 cmp
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Recipe:oxide.std
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Layer Material: 10kA Thermal Oxide on Si
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Time:2 min of polishing
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NOTE: 05/25/2023 Down Force properly calibrated for the first time in many years and is now able to reach up to 16 PSI. This increased the Removal Rate expected with the standard recipe
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Targeted Results:
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TargetDescription
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Thickness [A]:5 point avg using msp300
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Non-Uniformity [%]:<5%Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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use msp300 LST 400-850nm SiO2 on Si nkmap 5pt with 15mmEE
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GO HERE FOR OUR RR AND NU PREDICTOR CALCULATOR
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QM Process Procedure:
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StepToolDescription
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Stock Wafer-10kA wet oxide wafer
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Oxide thickness Pre-mill measurementmsp300
5 point thickness
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cmp SiO2cmp
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Oxide thickness Post-cmp measurementmsp300
5 point thickness
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