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TimestampUser NameTube?Notes (process info, sample info, problems, conditions, etc...)
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10/8/2021 11:59:43rhosler#6 - LPCVD Polysilicon100nm polysi 590C
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12/21/2021 11:31:33david kortge#4 -Wet/Dry Oxidationdry 1000A
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1/7/2022 22:13:17tzuhan#2 - LPCVD Silicon Nitridetestdep
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1/8/2022 22:03:50tzuhan#4 -Wet/Dry Oxidation2.2um wet oxide
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1/9/2022 12:03:17tzuhan#2 - LPCVD Silicon Nitride305nm
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1/9/2022 12:03:30tzuhan#4 -Wet/Dry Oxidationtest
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1/10/2022 10:17:07rhosler#4 -Wet/Dry Oxidation2200nm wet oxidation 10/600/10
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1/10/2022 10:18:59rhosler#7 - Wet/Dry Oxidation2200nm wet 10/600/10
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1/10/2022 10:31:40rhosler#2 - LPCVD Silicon Nitridenew dummies, 200nm 51min
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1/10/2022 10:47:03rhosler#3 - LPCVD Low Temperature Oxide (LTO)process check 350nm 56min
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1/13/2022 17:20:50
Swati Shikha (sshikha)
#4 -Wet/Dry Oxidation
2 bare SiC wafers + 1 bare Si wafer. Wet oxidation, 1100 C, 5 hr.
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1/13/2022 17:22:22
Swati Shikha (sshikha)
#1 - RCA Clean Wet/Dry Oxidation
2 4-inch SiC wafers + 1 4-inch Si wafer. Solvent + Piranha + BOE cleans done prior to RCA. Wet oxidation post RCA in Tube 4.
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1/14/2022 9:18:21
Swati Shikha (sshikha)
#6 - LPCVD Polysilicon
Polysilicon deposition @ 630 C, 346 min, targeting ~4.5um of poly. Samples were 2 4-inch SiC wafer, 1 4-inch Si wafer.
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1/14/2022 18:34:44
Swati Shikha (sshikha)
#4 -Wet/Dry Oxidation
Wet oxidation @ 1100 C, 18 min, targeting ~250 nm of oxide. Samples are 2 4-inch SiC wafers, 1 4-inch Si wafer.
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2/7/2022 21:16:16fnguyen#7 - Wet/Dry Oxidation7: dry oxide 1000A; 45 min @ 1100 C
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2/18/2022 12:19:14Sshikha#4 -Wet/Dry OxidationGrowing ~250nm of oxide (wet oxidation) on silicon samples
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2/18/2022 16:28:19Sshikha#6 - LPCVD PolysiliconPolysilicon deposition at 610 C. Test run.
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2/19/2022 9:32:03Sshikha#6 - LPCVD PolysiliconPolysilicon deposition at 615 C on silicon samples. Test run.
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2/21/2022 20:30:25Sshikha#6 - LPCVD PolysiliconPolysilicon deposition at 630 C on silicon samples
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3/2/2022 16:43:25
Christian Lange
#2 - LPCVD Silicon Nitride
Standard 3000 angstrom recipe to test deposition rate. Measured thickness: 285-301 nm. The furnace would not reinsert the cantilever after the run.
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3/6/2022 14:18:58Swati Shikha#4 -Wet/Dry OxidationWet oxidation (~180 nm) on Silicon sample
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3/6/2022 18:56:13Swati Shikha#6 - LPCVD PolysiliconPolysilicon deposition at 615 C, targeting ~4um of poly
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3/8/2022 21:47:36mbhatasa#7 - Wet/Dry Oxidation
Potential problem with the loading. Had to abort and restart the load step in the start because it was stuck halfway.
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3/10/2022 9:45:01
Christian Lange
#2 - LPCVD Silicon Nitridexuan nitride 300nm > SIN_60MIN for 58.4 min to get 300 nm
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3/12/2022 14:48:59Swati Shikha#6 - LPCVD PolysiliconPolysilicon deposition at 615 C, targeting ~4um
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4/6/2022 11:43:50fishe128#4 -Wet/Dry Oxidation2.2 um wet recipe and is measuring between 0.7-1.3 um...
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4/6/2022 14:14:37hosler0#4 -Wet/Dry Oxidation2200nm 600' 1100c wet test
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4/9/2022 21:46:45Ruihan Chen#3 - LPCVD Low Temperature Oxide (LTO)LTO for 350min. The thickness is about 2.2um.
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4/15/2022 12:37:56hosler0#6 - LPCVD Polysilicon3500a polysi 70m .1sccm 605c
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4/18/2022 12:09:31hosler0#6 - LPCVD Polysilicon350nm poly
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11/11/2022 11:06:13hosler0#3 - LPCVD Low Temperature Oxide (LTO)freshly clean tube validation/seasoning run
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12/2/2022 18:05:05aattanas#5 - Annealing3hr 1100 silicon with nitride and oxide no problems
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12/12/2022 13:18:55hosler0#7 - Wet/Dry Oxidationwet 1000nm #8 10/160/10
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12/12/2022 13:19:16hosler0#3 - LPCVD Low Temperature Oxide (LTO)#6 350nm 56'
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12/12/2022 13:19:39hosler0#2 - LPCVD Silicon Nitride300nm 58' new
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12/12/2022 13:20:44hosler0#4 -Wet/Dry Oxidation1000nm new #7 10/160/10
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1/24/2023 11:10:43kpagadal#2 - LPCVD Silicon Nitride340nm estimated Si3N4, Recp: Aveek 3400 Initial
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3/31/2023 8:56:42fnguyen#1 - RCA Clean Wet/Dry Oxidation25 wafers processed with pre-ox recipe
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3/31/2023 8:57:21fnguyen#4 -Wet/Dry Oxidation11 wafers, targeting 150nm oxide
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3/31/2023 8:57:46fnguyen#7 - Wet/Dry Oxidation11 wafers, targeting 150 nm oxide (dry)
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4/3/2023 13:18:46hosler0#3 - LPCVD Low Temperature Oxide (LTO)check LTO 350nm 10m o2 56m o2+sih4
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4/3/2023 13:25:13hosler0#4 -Wet/Dry Oxidationwet oxide new check 10/160/10
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4/4/2023 11:17:38hosler0#4 -Wet/Dry Oxidationdry new check 1u 1100
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4/4/2023 11:54:43hosler0#7 - Wet/Dry Oxidation10000 wet new check 10/160/10 t7
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4/4/2023 11:55:48hosler0#2 - LPCVD Silicon Nitridenitride new 2o2/44both at 800
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4/11/2023 12:03:04hosler0#7 - Wet/Dry Oxidationnew dry 1000a
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4/16/2023 16:30:08chen3360#5 - Annealing1100C N2 2h
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4/16/2023 16:31:47chen3360#3 - LPCVD Low Temperature Oxide (LTO)200min ~1um SiO2
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7/18/2023 15:22:02kpagadal#2 - LPCVD Silicon Nitride
Rcpe - AVEEK 3400A 20M, file saved in my folder, growth time-20min
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7/21/2023 15:51:29kpagadal#2 - LPCVD Silicon NitrideAveek 3400 Initial - 3.6min recipe,, est 20nm
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7/24/2023 17:39:25aattanas#5 - AnnealingNA
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7/31/2023 13:37:07hosler0#2 - LPCVD Silicon Nitride51' for 300nm test nitride
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8/3/2023 10:35:32hosler0#2 - LPCVD Silicon Nitride3000A SiN 52" for external customer
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8/25/2023 9:57:00hosler0#9 - LPCVD TEOS30m X 0.3g/m - 9g of TEOS
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10/4/2023 13:13:18hosler0#4 -Wet/Dry Oxidation10k wet ox tube 4 (front zone dead)
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10/4/2023 13:16:31hosler0#7 - Wet/Dry Oxidation10k wet oxide test
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10/5/2023 15:03:41hosler0#7 - Wet/Dry Oxidationtest dry ox 200nm 130m
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10/5/2023 15:04:01hosler0#4 -Wet/Dry Oxidationdry ox test 200nm 176m
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10/12/2023 13:50:26hosler0#7 - Wet/Dry Oxidation110nm dry 86' 6" wafer
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11/4/2023 23:25:11chen3360#7 - Wet/Dry Oxidation140 min dry oxide
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11/8/2023 12:11:25hosler0#7 - Wet/Dry Oxidationdry ox 1100a 63m for NG
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1/25/2024 12:23:24hosler0#4 -Wet/Dry Oxidationdry oxide 63' t4
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1/25/2024 12:23:59hosler0#7 - Wet/Dry Oxidationsouvenir 110nm process t7 63"
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1/25/2024 12:32:07hosler0#2 - LPCVD Silicon Nitridetest 51' tgt 2000a
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1/25/2024 12:34:02hosler0#3 - LPCVD Low Temperature Oxide (LTO)test run 350nm 56'
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1/26/2024 12:41:27hosler0#4 -Wet/Dry OxidationWet new rec. 10/160/10"
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1/26/2024 12:41:49hosler0#7 - Wet/Dry Oxidationsouvenier dry round 2
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1/29/2024 12:44:35hosler0#7 - Wet/Dry Oxidationwet new 160" t7
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2/15/2024 10:44:40hosler0#2 - LPCVD Silicon Nitride100nm gas leak test
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2/26/2024 14:23:52hosler0#2 - LPCVD Silicon Nitridesin 200nm 51' test run
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2/27/2024 16:00:11hosler0#2 - LPCVD Silicon Nitridesin 23.5' 100+80
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2/28/2024 12:20:13hosler0#2 - LPCVD Silicon Nitride100nm sin
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2/29/2024 14:36:32hosler0#2 - LPCVD Silicon Nitridesin 100nm ts test
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3/4/2024 4:15:52Ruihan Chen#5 - Annealing1050C 2h okay
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4/26/2024 10:38:11hosler0#2 - LPCVD Silicon Nitride200nm 57" deposition
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