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1 | Timestamp | User Name | Tube? | Notes (process info, sample info, problems, conditions, etc...) | ||||||
2 | 10/8/2021 11:59:43 | rhosler | #6 - LPCVD Polysilicon | 100nm polysi 590C | ||||||
3 | 12/21/2021 11:31:33 | david kortge | #4 -Wet/Dry Oxidation | dry 1000A | ||||||
4 | 1/7/2022 22:13:17 | tzuhan | #2 - LPCVD Silicon Nitride | testdep | ||||||
5 | 1/8/2022 22:03:50 | tzuhan | #4 -Wet/Dry Oxidation | 2.2um wet oxide | ||||||
6 | 1/9/2022 12:03:17 | tzuhan | #2 - LPCVD Silicon Nitride | 305nm | ||||||
7 | 1/9/2022 12:03:30 | tzuhan | #4 -Wet/Dry Oxidation | test | ||||||
8 | 1/10/2022 10:17:07 | rhosler | #4 -Wet/Dry Oxidation | 2200nm wet oxidation 10/600/10 | ||||||
9 | 1/10/2022 10:18:59 | rhosler | #7 - Wet/Dry Oxidation | 2200nm wet 10/600/10 | ||||||
10 | 1/10/2022 10:31:40 | rhosler | #2 - LPCVD Silicon Nitride | new dummies, 200nm 51min | ||||||
11 | 1/10/2022 10:47:03 | rhosler | #3 - LPCVD Low Temperature Oxide (LTO) | process check 350nm 56min | ||||||
12 | 1/13/2022 17:20:50 | Swati Shikha (sshikha) | #4 -Wet/Dry Oxidation | 2 bare SiC wafers + 1 bare Si wafer. Wet oxidation, 1100 C, 5 hr. | ||||||
13 | 1/13/2022 17:22:22 | Swati Shikha (sshikha) | #1 - RCA Clean Wet/Dry Oxidation | 2 4-inch SiC wafers + 1 4-inch Si wafer. Solvent + Piranha + BOE cleans done prior to RCA. Wet oxidation post RCA in Tube 4. | ||||||
14 | 1/14/2022 9:18:21 | Swati Shikha (sshikha) | #6 - LPCVD Polysilicon | Polysilicon deposition @ 630 C, 346 min, targeting ~4.5um of poly. Samples were 2 4-inch SiC wafer, 1 4-inch Si wafer. | ||||||
15 | 1/14/2022 18:34:44 | Swati Shikha (sshikha) | #4 -Wet/Dry Oxidation | Wet oxidation @ 1100 C, 18 min, targeting ~250 nm of oxide. Samples are 2 4-inch SiC wafers, 1 4-inch Si wafer. | ||||||
16 | 2/7/2022 21:16:16 | fnguyen | #7 - Wet/Dry Oxidation | 7: dry oxide 1000A; 45 min @ 1100 C | ||||||
17 | 2/18/2022 12:19:14 | Sshikha | #4 -Wet/Dry Oxidation | Growing ~250nm of oxide (wet oxidation) on silicon samples | ||||||
18 | 2/18/2022 16:28:19 | Sshikha | #6 - LPCVD Polysilicon | Polysilicon deposition at 610 C. Test run. | ||||||
19 | 2/19/2022 9:32:03 | Sshikha | #6 - LPCVD Polysilicon | Polysilicon deposition at 615 C on silicon samples. Test run. | ||||||
20 | 2/21/2022 20:30:25 | Sshikha | #6 - LPCVD Polysilicon | Polysilicon deposition at 630 C on silicon samples | ||||||
21 | 3/2/2022 16:43:25 | Christian Lange | #2 - LPCVD Silicon Nitride | Standard 3000 angstrom recipe to test deposition rate. Measured thickness: 285-301 nm. The furnace would not reinsert the cantilever after the run. | ||||||
22 | 3/6/2022 14:18:58 | Swati Shikha | #4 -Wet/Dry Oxidation | Wet oxidation (~180 nm) on Silicon sample | ||||||
23 | 3/6/2022 18:56:13 | Swati Shikha | #6 - LPCVD Polysilicon | Polysilicon deposition at 615 C, targeting ~4um of poly | ||||||
24 | 3/8/2022 21:47:36 | mbhatasa | #7 - Wet/Dry Oxidation | Potential problem with the loading. Had to abort and restart the load step in the start because it was stuck halfway. | ||||||
25 | 3/10/2022 9:45:01 | Christian Lange | #2 - LPCVD Silicon Nitride | xuan nitride 300nm > SIN_60MIN for 58.4 min to get 300 nm | ||||||
26 | 3/12/2022 14:48:59 | Swati Shikha | #6 - LPCVD Polysilicon | Polysilicon deposition at 615 C, targeting ~4um | ||||||
27 | 4/6/2022 11:43:50 | fishe128 | #4 -Wet/Dry Oxidation | 2.2 um wet recipe and is measuring between 0.7-1.3 um... | ||||||
28 | 4/6/2022 14:14:37 | hosler0 | #4 -Wet/Dry Oxidation | 2200nm 600' 1100c wet test | ||||||
29 | 4/9/2022 21:46:45 | Ruihan Chen | #3 - LPCVD Low Temperature Oxide (LTO) | LTO for 350min. The thickness is about 2.2um. | ||||||
30 | 4/15/2022 12:37:56 | hosler0 | #6 - LPCVD Polysilicon | 3500a polysi 70m .1sccm 605c | ||||||
31 | 4/18/2022 12:09:31 | hosler0 | #6 - LPCVD Polysilicon | 350nm poly | ||||||
32 | 11/11/2022 11:06:13 | hosler0 | #3 - LPCVD Low Temperature Oxide (LTO) | freshly clean tube validation/seasoning run | ||||||
33 | 12/2/2022 18:05:05 | aattanas | #5 - Annealing | 3hr 1100 silicon with nitride and oxide no problems | ||||||
34 | 12/12/2022 13:18:55 | hosler0 | #7 - Wet/Dry Oxidation | wet 1000nm #8 10/160/10 | ||||||
35 | 12/12/2022 13:19:16 | hosler0 | #3 - LPCVD Low Temperature Oxide (LTO) | #6 350nm 56' | ||||||
36 | 12/12/2022 13:19:39 | hosler0 | #2 - LPCVD Silicon Nitride | 300nm 58' new | ||||||
37 | 12/12/2022 13:20:44 | hosler0 | #4 -Wet/Dry Oxidation | 1000nm new #7 10/160/10 | ||||||
38 | 1/24/2023 11:10:43 | kpagadal | #2 - LPCVD Silicon Nitride | 340nm estimated Si3N4, Recp: Aveek 3400 Initial | ||||||
39 | 3/31/2023 8:56:42 | fnguyen | #1 - RCA Clean Wet/Dry Oxidation | 25 wafers processed with pre-ox recipe | ||||||
40 | 3/31/2023 8:57:21 | fnguyen | #4 -Wet/Dry Oxidation | 11 wafers, targeting 150nm oxide | ||||||
41 | 3/31/2023 8:57:46 | fnguyen | #7 - Wet/Dry Oxidation | 11 wafers, targeting 150 nm oxide (dry) | ||||||
42 | 4/3/2023 13:18:46 | hosler0 | #3 - LPCVD Low Temperature Oxide (LTO) | check LTO 350nm 10m o2 56m o2+sih4 | ||||||
43 | 4/3/2023 13:25:13 | hosler0 | #4 -Wet/Dry Oxidation | wet oxide new check 10/160/10 | ||||||
44 | 4/4/2023 11:17:38 | hosler0 | #4 -Wet/Dry Oxidation | dry new check 1u 1100 | ||||||
45 | 4/4/2023 11:54:43 | hosler0 | #7 - Wet/Dry Oxidation | 10000 wet new check 10/160/10 t7 | ||||||
46 | 4/4/2023 11:55:48 | hosler0 | #2 - LPCVD Silicon Nitride | nitride new 2o2/44both at 800 | ||||||
47 | 4/11/2023 12:03:04 | hosler0 | #7 - Wet/Dry Oxidation | new dry 1000a | ||||||
48 | 4/16/2023 16:30:08 | chen3360 | #5 - Annealing | 1100C N2 2h | ||||||
49 | 4/16/2023 16:31:47 | chen3360 | #3 - LPCVD Low Temperature Oxide (LTO) | 200min ~1um SiO2 | ||||||
50 | 7/18/2023 15:22:02 | kpagadal | #2 - LPCVD Silicon Nitride | Rcpe - AVEEK 3400A 20M, file saved in my folder, growth time-20min | ||||||
51 | 7/21/2023 15:51:29 | kpagadal | #2 - LPCVD Silicon Nitride | Aveek 3400 Initial - 3.6min recipe,, est 20nm | ||||||
52 | 7/24/2023 17:39:25 | aattanas | #5 - Annealing | NA | ||||||
53 | 7/31/2023 13:37:07 | hosler0 | #2 - LPCVD Silicon Nitride | 51' for 300nm test nitride | ||||||
54 | 8/3/2023 10:35:32 | hosler0 | #2 - LPCVD Silicon Nitride | 3000A SiN 52" for external customer | ||||||
55 | 8/25/2023 9:57:00 | hosler0 | #9 - LPCVD TEOS | 30m X 0.3g/m - 9g of TEOS | ||||||
56 | 10/4/2023 13:13:18 | hosler0 | #4 -Wet/Dry Oxidation | 10k wet ox tube 4 (front zone dead) | ||||||
57 | 10/4/2023 13:16:31 | hosler0 | #7 - Wet/Dry Oxidation | 10k wet oxide test | ||||||
58 | 10/5/2023 15:03:41 | hosler0 | #7 - Wet/Dry Oxidation | test dry ox 200nm 130m | ||||||
59 | 10/5/2023 15:04:01 | hosler0 | #4 -Wet/Dry Oxidation | dry ox test 200nm 176m | ||||||
60 | 10/12/2023 13:50:26 | hosler0 | #7 - Wet/Dry Oxidation | 110nm dry 86' 6" wafer | ||||||
61 | 11/4/2023 23:25:11 | chen3360 | #7 - Wet/Dry Oxidation | 140 min dry oxide | ||||||
62 | 11/8/2023 12:11:25 | hosler0 | #7 - Wet/Dry Oxidation | dry ox 1100a 63m for NG | ||||||
63 | 1/25/2024 12:23:24 | hosler0 | #4 -Wet/Dry Oxidation | dry oxide 63' t4 | ||||||
64 | 1/25/2024 12:23:59 | hosler0 | #7 - Wet/Dry Oxidation | souvenir 110nm process t7 63" | ||||||
65 | 1/25/2024 12:32:07 | hosler0 | #2 - LPCVD Silicon Nitride | test 51' tgt 2000a | ||||||
66 | 1/25/2024 12:34:02 | hosler0 | #3 - LPCVD Low Temperature Oxide (LTO) | test run 350nm 56' | ||||||
67 | 1/26/2024 12:41:27 | hosler0 | #4 -Wet/Dry Oxidation | Wet new rec. 10/160/10" | ||||||
68 | 1/26/2024 12:41:49 | hosler0 | #7 - Wet/Dry Oxidation | souvenier dry round 2 | ||||||
69 | 1/29/2024 12:44:35 | hosler0 | #7 - Wet/Dry Oxidation | wet new 160" t7 | ||||||
70 | 2/15/2024 10:44:40 | hosler0 | #2 - LPCVD Silicon Nitride | 100nm gas leak test | ||||||
71 | 2/26/2024 14:23:52 | hosler0 | #2 - LPCVD Silicon Nitride | sin 200nm 51' test run | ||||||
72 | 2/27/2024 16:00:11 | hosler0 | #2 - LPCVD Silicon Nitride | sin 23.5' 100+80 | ||||||
73 | 2/28/2024 12:20:13 | hosler0 | #2 - LPCVD Silicon Nitride | 100nm sin | ||||||
74 | 2/29/2024 14:36:32 | hosler0 | #2 - LPCVD Silicon Nitride | sin 100nm ts test | ||||||
75 | 3/4/2024 4:15:52 | Ruihan Chen | #5 - Annealing | 1050C 2h okay | ||||||
76 | 4/26/2024 10:38:11 | hosler0 | #2 - LPCVD Silicon Nitride | 200nm 57" deposition | ||||||
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