5.10 Tystar10 - 10SDPLYA
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Tystar10 - 10SDPLYA
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Process Specification
Process Performance
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Tool Name:Tystar10
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Description: This monitor tracks polysilicon deposition parameters and film quality
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Recipe:10SDPLYA
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Layer Material: Doped polysilicon
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Targeted Results:
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TargetDescription
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Thickness [A]:500Measured using nanoduv
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Non-uniformity [%]:<10Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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Refractive Index3.97Measured using ellips
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Sheet Resist [Ohm/sq]
225Measured using cde-resmap
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Stress [MPa]<+/-300Measured using flexus
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Process Conditions:
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Deposition:
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PH3 [sccms]:3
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SiH4 [sccms]:120
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Temperature [degrees C]:
615
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Time [HH:MM:SS]:00:30:00
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QM Process Procedure:
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StepToolDescription
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Stock WaferNew Wafer
6-inch P-Type Test Wafer
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Oxide Growthtystar21k oxide growth
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Stress1flexusInitial stress measurement
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Doped Poly Deposition
tystar1030 minute doped-poly deposition
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Annealtystar230 minute anneal at 950 degrees
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Film Thickness / RInanoduv5-point film thickness / RI
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Backside etchtechnics-cClear backside
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Stress2flexusFinal stress measurement
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Strip Oxidemsink8
HF bath to strip oxide layer
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Resistance Mapcde-resmap
5-point sheet resistance
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