6.25 CVD - Cambridge ALD Al2O3 QM
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CVD - Cambridge - Atomic Layer Deposition (ALD) - Al2O3
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Process Specification
Process Performance
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Tool Name:Cambridge
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Description: This monitor tracks the Al2O3 ALD thickness, dep rate/cycle, and the uniformity of the deposition.
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Recipe:Process Monitor
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Layer Material: Al2O3
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Cycles:1000
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Targeted Results:
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TargetDescription
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Thickness [A]:8755 point avg using Ellips
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Non-Uniformity [%]:<5Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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Refractive Index [n]~1.625 pt average using Ellips
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Process Conditions:
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ALD Deposition:
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TMA:0.06s pulse
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Plasma300W O2
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Chamber Temp:270C
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QM Process Procedure:
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StepToolDescription
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Stock Wafer-Bare Si P-type Test wafer
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CVDCambridgeCambridge monitor
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Reserve overnight for run
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FT1Ellips5 point thickness (Al2O3 on Si)
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Ellipse 2 ALD comparison Picosun vs Cambridge
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AL2O3 thickness 5/1/2018
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TiO2 thickness5/1/2018
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