7.32 Centura-MXP Plasma Etch QM
 Share
The version of the browser you are using is no longer supported. Please upgrade to a supported browser.Dismiss

 
View only
 
 
ABCDEFGHIJK
1
2
Centura-MXP Plasma Etch Monitor
3
4
Process Specification
Process Performance
5
Tool Name:Centura-MXP
6
Description: This monitor tracks the (1) etch rate of Thermal SiO2, (2) uniformity, and (3) SiO2:PR photoresist selectivity of MXP-OXIDE-ETCH for Centura-MXP.
7
8
Etch Recipe:MXP-OXIDE-ETCH
9
Etch Time [sec]:30
10
11
Targeted Results:
12
Etch Rate [A/min]:4000
13
Uniformity [%]:<5
14
Photoresist Selectivity:
4
15
16
Process Conditions:
17
RF Power [Watts]:700CHF3 [sccm]:45
18
Pressure [mTorr]:200AR [sccm]:150
19
CF4 [sccm]:15
Magnet [Gauss]:
20
20
21
QM Process Procedure:
22
StepToolDescription
23
Stock WaferTystar2:10kA Oxide
24
Photolithographyprimeoven:#2
25
picotrack1:T1_UV210-0.6_0.9um_noHMDS
26
ASML:Etch Monitor Mask
27
picotrack2:MF 26A, 60s HPO
28
Technics-c:Descum
29
Axcelis:UV Hardbake, program U
30
FT1Nano Duv:Pre-etch 5 point film thickness
31
ASIQ1ASIQ:5 point step height, pre-etch
32
EtchCentura-MXP:MXP-OXIDE-ETCH
33
FT2Nano Duv:Post-etch 5 point film thickness
34
ASIQ2ASIQ:5 point step height, post-etch
35
Loading...
Main menu