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SIO2 HDR 250C
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Argon Surface PrepDepositionPump/Purge Cycle
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Sequence ContentsSiO2 pre dep 250C-SEQUENCESiO2 HDR 250C Gas StabSiO2 HDR 250C IgnitionSiO2 HDR 250C DepPost Dep PD-Purge-SEQUENCE
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Process stepsPreDep250C PumpdownPreDep250C O2Ar Gas StabPreDep250C O2Ar IgnitionPreDep250C O2Ar PlasmaPreDep250C PumpdownSiO2 HDR 250C Gas StabSiO2 HDR 250C IgnitionSiO2 HDR 250C DepPost Process FlushPost Process Pumpdown
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Parameters
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Process time (sec)301539030303As required3030
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Pressure (mTorr)05550555100
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Temperature2 (deg C)250250250250250250250250250250
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RF1 Forward Power (W)00130000010000
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RF2 Forward Power (W)0060060000060000
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SiH4 100% (sccm)28282850
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N2 500 (sccm)100
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AR 100(sccm)505050202020
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O2 100 (sccm)565656
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Temperature1=40 C
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Temperature3=40 C
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Helium Cooler Pressure Setpint=5000mTorr
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