7.23 STS-Oxide Plasma Etch QM
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STS-Oxide Plasma Etch Monitor
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Process Specification
Process Performance
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Tool Name:STS-Oxide
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Description: This monitor tracks the (1) etch rate of Thermal SiO2, (2) uniformity, and (3) SiO2:PR photoresist selectivity of .5um OXIDE MON for STS-Oxide. Wafer also known as P11.
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Etch Recipe:STS-Oxide-monitor
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Etch Time [sec]:45
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Targeted Results:
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Etch Rate [A/min]:3500
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Uniformity [%]:<5
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Photoresist Selectivity:>2
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Process Conditions:
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Strike Pressure [mTorr]:10 (2sec)Coil Power [Watts]:1500
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Pressure [mTorr]:4Bias Power [Watts]:350
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C4F8 Flow [sccm]:15Bias Frequency [MHz]:13.56
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H2 Flow [sccm]:8Platen Chiller [C]:0
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He Flow [sccm]:174
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QM Process Procedure:
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StepToolDescription
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Stock WaferTystar2:10kA Oxide
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Photolithographyprimeoven:#2
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picotrack1:T1_UV210-0.6_0.9um_noHMDS
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ASML:Etch Monitor Mask
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picotrack2:MF 26A, 60s HPO
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Technics-c:Descum
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Axcelis:UV Hardbake, program U
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FT1Nano Duv:Pre-etch 5 point film thickness
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ASIQ1ASIQ:5 point step height, pre-etch
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EtchSTS-Oxide:STS-OXIDE-MONITOR
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FT2Nano Duv:Post-etch 5 point film thickness
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ASIQ2ASIQ:5 point step height, post-etch
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