7.22 STS2 Plasma Etch QM
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STS2 Plasma Etch Monitor
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Process Specification:QM Process Procedure:
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Tool Name:STS2StepToolDescription
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Description:This monitor tracks etch rate per cycle and Si:PR photoresist selectivity of the standard "DEEP SILICON 1" Etch for STS2.Stock Wafer:NoneBare P-type test Si Wafer
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Photolitho:Picotrack1:Prime HMDS 100C 30 sec
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Coat AZP4620 "12 um" resist
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Recipe:STS2 MONITORProximity Bake 110 C, 80s
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Cycles:360Rest20-70% humidity, 20C, 30 minutes
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Cycle Time [sec]17GCAWS6:Darkfield "Lines/Spaces Mask". ~8.8s exposure
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Process Conditions:Targeted Results:Picotrack 2:Develop 4x60s puddles, 4 sprays MF26A developer
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Etch:Etch Rate [nm/cycle]:650-850Technics-c:Descum 30 seconds
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Time [Sec]:10Side Wall Angle90 degreesOvenHard bake 90C 30 minutes
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Pressure [mTorr]:35
Photoresist Selectivity:
>70:1ASIQ1ASIQ:5 point step height, pre-etch
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SF6 [sccm]:130Si EtchSTS2STS2 MONITOR
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O2 [sccm]:13SEMFEI/Zeiss SEMSEM inspection
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Coil [Watts]:600
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Bias HF [Watts]:20
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Depostion:
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Time [Sec]:7
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Pressure [mTorr]:18
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C4F8 [sccm]85
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Coil [Watts]:600
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Bias [Watts]:None
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