| A | B | C | D | E | G | I | |
|---|---|---|---|---|---|---|---|
1 | Company | Plant Name | Plant Location | Plant Cost (in US$ billions) | Started Production | Process Technology Node (nm) | hideTechnology / Products |
331 | Samsung | Samsung China Semiconductor[166] | China, Shaanxi Province | DDR Memory | |||
332 | Samsung | Samsung Suzhou Research Center (SSCR)[153] | China, Suzhou, Suzhou Industrial Park | DDR Memory | |||
333 | Samsung | Onyang Complex[166] | South Korea, Chungcheongnam-do | DDR Memory, System Logic | |||
334 | Samsung | Giheung Campus[169] | South Korea, Gyeonggi-do, Yongin | LEDs | |||
335 | Samsung | Hwasung Campus[169] | South Korea, Gyeonggi-do, Hwaseong | LEDs | |||
336 | Samsung | Tianjin Samsung LED Co., Ltd.[169] | China, Tianjin, Xiqing, Micro-Electronic Industrial Park, Weisi Road | LEDs | |||
337 | Samsung | S2-Line[151] | USA, TX, Austin | 0.260[152] | 2011 | 14 | Microprocessors |
338 | Samsung | S1-Line[153] | South Korea, Giheung 韓国龍仁市器興区 | 33 (total) | 2005 (second phase), 1983 (first phase)[154][155] | 14 | Microprocessors, S.LSI, LEDs[156] |
339 | Samsung | Pyeongtaek[157][158][149] | South Korea, Pyeongtaek 平沢 | 14.7, 27 (total)[159][152][160][161][162][163][164][123] | 2017, July 6 | 14 | V-NAND, DRAM (planned) |
340 | Samsung | S3-Line[148] | South Korea, Hwaseong 華城市 | 10.2, 16.2 (planned)[149][150] | Under construction | 20 | DRAM, VNAND |
341 | Samsung | F1x1[167][149] | China, Xian | 2.3[168] | 2014 (first phase, second phase is under review)[149] | 20 | VNAND |