7.21 Technics-c Nitride Plasma Etch QM
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Technics-c Nitride Plasma Etch QM
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Process Specification
Process Performance
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Tool Name:Technics-c
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Description: This monitor tracks the (1) etch rate of Nitride, and (2) uniformity for the Technics-c.
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Etch Time [sec]:45
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Targeted Results:
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Etch Rate [A/min]:500
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Uniformity [%]:<12
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Process Conditions:
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Power [Watts]: 100
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SF6 Gas Flow:13
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He Gas Flow:21
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QM Process Procedure:
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StepToolDescription
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Stock WaferTystar17:1kA Nitride -- LSNSTDA.017 30min dep
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FT1Nano Duv:Pre-etch 5 point film thickness
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O2 Chamber cleanTechnics-c:Oxygen scourge before monitor
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EtchTechnics-c:Nitride Etch (45 sec)
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FT1Nano Duv:Post-etch 5 point film thickness
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