7.13 Lam8 Plasma Etch QM
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Lam8 Plasma Etch Monitor
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Process SpecificationProcess Performance
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Tool Name:lam8
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Description:This monitor tracks the (1) etch rate of Poly Si, (2) uniformity, and (3) Poly:PR photoresist selectivity of 8001_POLY_ME for lam8.
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Etch Recipe:8001_POLY_ME
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Etch Time [sec]:30
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Targeted Results:
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Etch Rate [A/min]:2000
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Uniformity [%]:<5
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Photoresist Selectivity:4
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Process Conditions:
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TCP RF Power [Watts]:300HBr [sccm]:150
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Bias RF Power [Watts]:150He [Torr]:4
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Cl2 [sccm]:50Press [mTorr]:12
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QM Process Procedure:
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StepToolDescription
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Stock WaferTystar2:3kA Oxide
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Tystar10:6-7kA Poly Si (on Oxide)
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Photolithographyprimeoven:#2
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picotrack1:T1_UV210-0.6_0.9um_noHMDS
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ASML:Etch Monitor Mask
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picotrack2:MF 26A, 60s HPO
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Technics-c:Descum
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Axcelis:UV Hardbake, program U
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FT1Nano Duv:Pre-etch 5 point film thickness, Poly on Oxide
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ASIQ1ASIQ:5 point step height, pre-etch
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Etchlam8:8001_Poly_ME
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FT2Nano Duv:Post-etch 5 point film thickness, Poly on Oxide
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ASIQ2ASIQ:5 point step height, post-etch
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