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FilmRecipeSubs.TThickness (Woollam)Thickness (Wafer Mapping)Dep.timeJAW EC-400 (Woolam Spec. Ell.)Dep.rateStressBHF etch rate waferLPD (Gain4) particle size (0.16-1.6)umHaze, for Gain4LPD (Gain2) particle size (2.8-28.0)umPhotosPhotos Comments/Brian Lingg PMNotes
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Production categorywafer center25 points (avg.)Maintenance
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SiO2SiO2 Deposition250° C (nm) (nm)minIndex @ 632.8nmIndex @ 1550nm ( nm/min)(MPa) ( nm/min)Before DepositionAfter Deposition%Before DepositionAfter DepositionSurfscanOptical microscopeDeposition done on 4"Si wafer
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IndexDep.rateStressDon : PM done 12/14/2020
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12-15-20SiO2SiO2 Deposition 2501981.7845.01.4591.45144.04-265.52not done!1428246100967Scan failed on thick SiO2 film (gain4)DF: I do not see particles, because they are very small ~(0.160-0.213)umFirst run:1) DI/IPA clean sidewalls; 2)CF4/O2 clean 20min; 3 )SiO2 coat 30sec; 4) SiO2 dep 45min; 5)DI/IPA clean sidewalls; 6)CF4/O2 clean 45min
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12-16-20SiO2SiO2 Deposition 2501324.7430.01.4581.44744.16-271.98not done!-14937100-246Scan failed on thick SiO2 film (gain4)DF: I do not see particles, because they are very small ~(0.160-0.213)umSecond run: Done same day, right after 45min clean was complete. 1) DI/IPA clean sidewalls; 2)CF4/O2 clean 20min; 3 )SiO2 coat 30sec; 4) SiO2 dep 30min; 5)DI/IPA clean sidewalls; 6)CF4/O2 clean 30min
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Avg Index1.4591.449
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Index+1%1.4731.463
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Index-1%1.4441.434
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Avg Dep.Rate
44.10
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Avg +10%48.51
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Avg - 10%39.69
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Avg. Stress-268.75
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Avg +30%-349.38
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Avg - 30%-188.13
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Avg. HF e.r.#DIV/0!
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