Table SiN 250C SiH4 flow 12.5sccm

	A	B	C	D	E	F	G	H	I	J	K
1		SiN 250C
2		Argon Surface Prep					Deposition			Pump/Purge Cycle
3	Sequence Contents	Pre dep 250C-SEQUENCE					SiN 250C Gas Stab	SiN 250C Ignition	SiN 250C Dep	Post Dep PD-Purge-SEQUENCE
4	Process step	PreDep250C Pumpdown	PreDep250C O2Ar Gas Stab	PreDep250C O2Ar Ignition	PreDep250C O2Ar Plasma	PreDep250C Pumpdown	SiN 250C Gas Stab	SiN 250C Ignition	SiN 250C Dep	Post Process Flush	Post Process Pumpdown
5	Parameters
6	Process time (sec)	30	15	3	90	30	15	6	As required	30	30
7	Pressure (mTorr)	0	5	5	5	0	5	5	5	10	0
8	Temperature2 (deg C)	250	250	250	250	250	250	250	250	250	250
9	RF1 Forward Power (W)	0	0	130	0	0	0	150	0	0	0
10	RF2 Forward Power (W)	0	0	600	600	0	0	800	800	0	0
11	SiH4 100% (sccm)						12.5	12.5	12.5
12	N2 500 (sccm)									100
13	AR 100 (sccm)		50	50	50		20	20	20
14	O2 100 (sccm)
15	N2 20 (sccm)						8	8	8
16
17	Temperature1=40 C
18	Temperature3=40 C
19	Helium Cooler Pressure Setpint=5000mTorr
20
21	seasoning=5min
22	deposition=480sec
23	post dep clean=1500sec
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100