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DateUserFilmRecipeSubstrate TThickness Dep.timeJAW EC-400 (Woolam Spec. Ell.)Dep.rateStressBHF etch rate waferLPD ( light point defects)AVG dep.rateAVG+10%AVG-10%AVG index@632.8AVG+2%AVG-2%AVG.StressAvg+30%Avg-30%Comments/Brian Lingg PM
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Wafer center
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1/1/2012UserSiNSiN_10250 °C (Å)secIndex @ 632.8nmIndex @ 1550nm( nm/min)MPa ( nm/min)before dep.after dep.Deposition done on 4"Si wafer
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Index @ 632.8nmIndex @ 1550nmDep.rateStressAvg.dep.rateAvg.+10%Avg.-10%Avg.IndexAvg+2%Avg-2%Avg.StressAvg.s.+30%Avg.s. -30%
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02-01-2017BiljanaSiNSiN_102501115.77568.12.0792.00411.78240.0848.0011.9413.1310.751.9531.9921.914424.80552.24297.36
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02-06-2017BiljanaSiNSiN_102501022.25517.21.9141.87211.86491.0296.8011.9413.1310.751.9531.9921.914424.80552.24297.36
Brian adjusted dep.rate, dep.time and corr.factor
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02-27-2017BiljanaSiNSiN_102501052.46517.21.9271.90912.21558.3592.406642611.9413.1310.751.9531.9921.914424.80552.24297.36
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04-11-2017BiljanaSiNSiN_102501036.94517.21.8811.84512.03568.28125.27714411.9413.1310.751.9531.9921.914424.80552.24297.36
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05-19-2017BiljanaSiNSiN_102501010.39517.21.8811.89211.72119.4528264111.9413.1310.751.9531.9921.914424.80552.24297.36I could not meassure stress on SiN film!
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06-16-2017BiljanaSiNSiN_102501037.58517.22.0351.96812.04266.2745.81217511.9413.1310.751.9531.9921.914424.80552.24297.36Replaced the Silane and Ammonia MFCs
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CF for NH3 adjusted from 0.73 to 0.50
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Try on Monday CF=0.55
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Avg.Thickness1045.90
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Avg. Index1.953
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Avg+2%1.992
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Avg-2%1.914
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Avg. Index1.915
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Avg+2%1.953
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Avg-2%1.877
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Avg Dep.Rate11.94
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Avg +10%13.13
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Avg - 10%10.75
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Avg. Stress424.80
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Avg +30%552.24
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Avg - 30%297.36
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Avg. HF e.r.87.96
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