5.11 Tystar11 - 11SULTON
 Share
The version of the browser you are using is no longer supported. Please upgrade to a supported browser.Dismiss

View only
 
 
ABCDEFGHIJKLMN
1
2
Tystar11 - 11SULTON
3
4
Process Specification
Process Performance
5
Tool Name:Tystar11
6
Description: This monitor tracks oxide thickness and uniformity
7
8
Recipe:11SULTON
9
Layer Material: Undoped silicon oxide
10
11
12
Targeted Results:
13
TargetDescription
14
Thickness [A]:3500-4500Measured using nanoduv
15
16
Uniformity [%]:>90%Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
17
18
19
Process Conditions:
20
Deposition:
21
O2 [sccms]:135
22
SiH4 [sccms]:90
23
Temperature [degrees C]:
450
24
Time [HH:MM:SS]:00:30:00
25
26
QM Process Procedure:
27
StepToolDescription
28
Stock WaferNew Wafer6-inch P-Type Test Wafer
Mean Refractive Index graph is currently static
29
Oxide GrowthTystar1130 minute oxide growth
Please change the data range to 'Chart Builder'!J15:M27
30
Film Thickness / RInanoduv5-point film thickness/RI
31
32
33
34
35
36
37
38
Loading...