7.12 Lam7 Plasma Etch QM
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Lam7 Plasma Etch Monitor
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Process Specification:Process Performance
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Tool Name:Lam7
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Description:This monitor tracks the (1) etch rate of Aluminum, (2) uniformity, and (3) Al:PR photoresist selectivity of 7001_AL_ME for Lam7.
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Etch Recipe:7001_AL_ME
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Etch Time [sec]:30
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Targeted Results:
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Etch Rate [A/min]:9000
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Uniformity [%]:<15
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Photoresist Selectivity:
3
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Process Conditions:
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Pressure [mTorr]:8CL2 [sccm]:90
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TCP RF [Watts]:800BCL3 [sccm]:45
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Bias RF [Watts]:100
He Clamp [Torr]:
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QM Process Procedure:
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StepToolDescription
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Stock WaferTystar2:1kA Oxide
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ALN2:7.5kA Al (3)
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PhotolithographyPrimeoven:#2
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picotrack 1:T1_OiR906-1.2um_noHMDS
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GCAWS6:Etch Monitor Mask
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picotrack 1:PEB 120C 60s
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Hand Develop:MicroDev (1:1 Dev:DI mix)
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Technics-c:Descum
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Oven:120C 1hr in oven hardbake
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ASIQ1ASIQ:5 point step height, pre-etch
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EtchLam7:7001_AL_ME
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ASIQ2ASIQ:5 point step height, post-etch
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PR StripMatrix:Strips PR from wafers
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ASIQ3ASIQ:5-point step height, post-strip
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SEMFEI/Zeiss SEM:SEM inspection
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