7.0 Nanolab Etchers Overview.xlsx
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Material GroupOXIDE / NITRIDESILICONPHOTORESISTMETALSCOMPOUND 3-5VARIOUSTarget Material
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Marvell Equipment NameLAM6CENTURA-
MXP
STS-OXIDEPRIMAXXLAM8STS2STSXETCHMATRIXLAM7CENTURA-
MET
OXFORDCENTURA 3-5OXFORD-ICPTECHNICS-CSEMIPTHERMIONMILLMATRIX-ETCHYES-G500CENTURA-
STRI
Marvell Equipment Name
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Standard MaterialOxideOxideOxideOxideSiliconDeep SiliconDeep SiliconSiliconPhotoresistAluminumAluminumArsenides3-5 NitridesPhosphidesNitrideNbNoneNoneSiliconTBDTBD
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Allowed Alternate materialsNitrideNitrideNitride-SiC, SiGe----Ti, Al2O3, AlNTi, W, AlN, Al2O3, GaN, GaAs-Phosphides, arsenides, silicon-PhotoresistSiO2Low restrictionlow restrictionW, Mo, SiO2, SiN
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Maximum Kinetic Contaminant000000000000000044040
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Maximum Persistent Contaminant333403340333 (Indium 4)3 (Indium 4)3 (Indium 4)3044443
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Maximum Reactable Contaminant3
3 (Stop Allowed)
3 (Stop Allowed)
433344443334444444
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Maximum Organic Contaminant444144444444444444444
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Marvell Nanolab Manual Chapter7.67.317.237.077.137.227.217.54.327.127.337.417.317.427.27.87.37.17.6TBD7.34Marvell Nanolab Manual Chapter
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Marvell Nanolab Location584586584382584584584582384584586584586584584584582582584380586Marvell Nanolab Location
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Equipment ModelRainbow 4520MxP+MPX APSuEtch-MPX ICP SRMultiplex--TCP EtchDPSRIEDPS DT
Plasmalab 100 ICP
PE II-ATP - 1000--System1YES-G500-Equipment Model
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Equipment VendorLam Research
Applied Materials
SPTSSPTSLam ResearchSPTSSPTSXactixAllwin21Lam Research
Applied Materials
OxfordApplied MaterialsOxfordTechnicsSemi GroupPlasma-ThermVeecoAllwin21Yield Sys Eng
Applied Materials
Equipment Vendor
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Chamber ConfigurationPlasmaMERIERIEChem VaporRIEDRIEDRIEChem VaporPlasmaRIERIERIEDRIEICPRIERIERIE
Ion Beam Milling
PlasmaPlasmaPlasmaChamber Configuration
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Platformsingle chamberclustersingle chambersingle chambersingle chambersingle chambersingle chambersingle chambersingle chambersingle chambercluster
LL w/Oxford-icp
clusterLL w/Oxfordsingle chambersingle chambersingle chamber
single chamber
single chambersingle chamberclusterPlatform
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Wafer Loadcassettecasssettedualsinglecasssettedualsinglesingle single casssettecassettesingle cassetteSinglesingle single single single singlesinglecassetteWafer Load
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Load lockyesyesyesnoyesyesyesnonoyesyesyesyesyesnonononononoyesLoad lock
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Interface SoftwareEnvisionCentura 5200STS PROPLCEnvisionSTS PROSTS (win 3.1)win 3.1Allwin21EnvisionCentura 5200-Centura 5200PC4500nonenonenonenoneAllWin21/DOS6.0CTC-5000Centura 5200Interface Software
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Switched Gas ProcessingnononononoyesyesnononononoyesnonononononononoSwitched Gas Processing
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Endpoint yesyesnonoyesnonononoyesyesyesyesyesnoyesnonoyesnonoEndpoint
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Base Pressure<1E-5 Torr<1E-5 Torr<1E-5 Torr1 Torr<1E-5 Torr<1E-5 Torr<1E-5 Torr<20 mT<20 mT<1E-5 Torr<1E-5 Torr<1E-5 Torr<1E-5 Torr<1E-4 Torr<20 mT< 1E-5 Torr<20 mT<1E-5 Torr20 mT<30 mT<20 mTBase Pressure
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Typical Process Pressure250 mT100 mT4 mT125 Torr10 mT80 mT27 mT3 Torr3.75 Torr10 mT10 mT100 mT80 mT6-30 mTorr270 mT
30 mT to 300 mT
20-100 mT< 1 mT500 mT150 mT2 TorrTypical Process Pressure
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Chuck Typemechanical clampMonopolar ESCBipolar ESCarmBipolar ESCBipolar ESCBipolar ESCplatenplatenBipolar ESCMonopolar ESCplatenMonopolar ESCmechanicalplatenplatenplatenplatenplatentrayplatenChuck Type
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He Substrate Backside FlowyesyesyesnoyesyesyesnonenoneyesyesnoneyesyesnonenonenonenonenonenonenoHe Substrate Backside Flow
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Chuck Process Temp-10C15C-20C to 90CNot controlled40C-20C to 40C20Cnot controlled250C60C45C20C to 40C10C-200 to 300Cnot controlled20C10C to 65C20C to 400C80C20C to 100Cup to 500CChuck Process Temp
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Chamber Wall Process Tempnot controlled15C100C50C40Cnot controllednot controllednot controlled250 C60C65Cnot controlled65Cnot controlled20C to 100Cnot controllednot controllednot controlled20C to 100Cup to 500CChamber Wall Process Temp
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Chamber Lid Process Tempnot controllednot controlled130C50Cn/a45C45Cnot controlled250 Cn/a65Cnot controlled65Cnot controllednot controllednot controllednot controllednot controlled20C to 100Cup to 500CChamber Lid Process Temp
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Source Power Supply1250 Watt1400 Watt3000 Wattnone1250 Watt1500 Watt1000 Wattnone500 Watt1250 Watt2500 Watt600 Watt2000 Watt600W300 Watt600W500W400 Watt650 Watt1250 Watt1500 WattSource Power Supply
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Source Frequency400 kHz13.56 MHz13.56 MHznone13.56 MHz13.56 MHz13.56 MHznone13.56 MHz13.56 MHz1.8 MHz13.56 MHz13.56 MHz13.56 MHz13.56 MHz13.56 MHz13.56 MHz13.56 MHz13.56 MHz40 kHzmicrowaveSource Frequency
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Bias Power Supplynonenone1500 Wattnone1250 Watt30 Watt30 Wattnonenone1250 Watt660 Wattnone100 Watt300WnonenonenonenonenonenonenoneBias Power Supply
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Bias Frequencynonenone13.56 MHznone13.56 MHz
13.56MHz/400kHz
13.56MHz/400kHz
nonenone13.56 MHz12.56 MHznone13.56 MHz13.56 MHznonenonenonenonenonenonenoneBias Frequency
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Pulsed Bias OptionnonenonenonenonenoneyesyesnonenonenononenoneyesnononenonenonenonenonenonenonePulsed Bias Option
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Impedance MatchingautoautoautononeautoautoautononeautoautoautoautoautoautoautoautoautoautoautoautoautoImpedance Matching
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4in wafer compatiblehandle requiredhandle requiredhandle requiredyeshandle requiredhandle requiredhandle requiredyesyeshandle requiredhandle requiredyeshandle requiredHandle Requiredyesyesyesyesyesyeshandle required4in wafer compatible
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6in wafer compatibleyesyesyesyesyesyesyesyesyesyesyesyesyes
yes (2in uniformity)
yesyesyesyesyesyesyes6in wafer compatible
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8in wafer compatiblenononoyesnonononono nono nononoyesyesnononoyesno8in wafer compatible
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GAS 1Ar = 500 sccm
Ar = 80/160 sccm
Ar = 100 sccmEtOHHBr = 200 sccmAr = 100 sccm
C4F8 = 170 sccm
N2 (pressure) N2 = 100 sccmCl2 = 200 sccmAr = 200 sccm
Ar = 100 sccm
Cl2 = 100 sccmAr = 100 sccmCF4 = 51.1 sccmAr = 100 sccmAr = 100 sccm
Ar = 100 sccm
SF6 = 100 sccmAr = 100 sccmH2/N2 = 1 literGAS 1
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GAS 2O2 = 100 sccm
C4F8 = 20 sccm
C4F8 = 100 sccm
N2Cl2 = 200 sccm
C4F8 = 200 sccm
N2 = 500 sccmXeF2 (pressure)O2 = 100 sccmBCL3 = 100 sccm
BCl3 = 100 sccm
Cl2 = 100 sccm
HBr = 200 sccmN2 = 100 sccmCHF3 = 13 sccm
CF4 = 100 sccm
C4F8 = 100 sccm
-CF4 = 100 sccmO2 = 100 sccmN2 = 1 literGAS 2
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GAS 3CHF3 = 200 sccm
CF4 = 100 sccm
CF4 = 100 sccm
Anhyd HFCHF3 = 20 sccmO2 = 100 sccmO2 = 100 sccm--O2 = 500 sccmCl2 = 200 sccm
N2 = 100 sccm
H2 = 200 sccmO2 = 50 sccmHe = 21 sccm
CHF3 = 100 sccm
CF4 = 200 sccm
-
CHF3 = 100 sccm
O2 = 5 literGAS 3
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GAS 4CF4 = 200 sccm
CHF3 = 100 sccm
H2 = 100 sccmO2 = 5sccm
SF6 = 300 sccm
SF6 = 260 sccm
--SF6 = 100 sccmN2 = 50 sccm
O2 = 100 sccm
SF6 = 200 sccmSF6 = 100 sccm
O2 = 10/51.1 sccm
O2 = 100 sccm
CH4 = 100 sccm
-O2 = 200 sccm-GAS 4
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GAS 5CF4 = 50 sccm
C3HF = 100 sccm
He = 100 sccmHe = 500 sccm----He = 500 sccmO2 = 200 sccm
SF6 = 50 sccm
N2 = 100 sccmCH4 = 50 sccmSF6 = 13 sccm
SF6 = 100 sccm
CHF3 = 100 sccm
-He = 200 sccm-GAS 5
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GAS 6He = 500 sccmN2 = 50 sccmO2 = 100 sccmSF6 = 100 sccm----CF4 = 200 sccm
SF6 = 200 sccm
SiCl4 = 50 sccm
SiCl4 = 100 sccm
H2 = 50 sccm--H2 = 200 sccm--GAS 6
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GAS 7O2 = 100 sccmO2 = 50 sccm-O2 = 1000 sccm-------O2 = 200 sccmCL2 = 50 sccm--He = 100 sccm--GAS 7
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GAS 8CHF3 = 200 sccm--CF4 = 200 sccm-------
BCl3 = 200 sccm
BCL3 = 50 sccm--N2 = 100 sccm--GAS 8
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GAS 9------------HBr = 50 sccm--O2 = 100 sccm--GAS 9
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GAS 10--------------
SF6 = 100 sccm
--GAS 10
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