TC Sample Sets

	A	B	C	D	E	F	G	H	I	J	K	L	M	N	O	P	Q	R	S	T	U	V	W	X	Y	Z	AA	AB	AC	AD	AE	AF	AG	AH	AI	AJ
1																	Tc Testing #1							Tc Testing #2							Tc Testing #3
2	TC Sam #	Dep date	Substrate	Base	Tool	Power	DC Bias	Gas	Press [mTorr]	Seconds	T/S	Cooling	Recipe	Notes	Thick	Rate	Location	Date	Excitation	Tc	alpha(Rn/3)	RRR	Comments	Location	Date	Channel or Excitation	Tc	alpha(Rn/3)	RRR	comments	Location	Date	Excitatation	Tc	alpha(Rn/3)	RRR

3	10_20_A	6/5/2020	Silicon prime	pSi	SEGI	1200	80V	Argon	21	96	3.0	60	TAMU_06_05_20_TC_test	Lower power test	42.094	0.4385	LBL	2/5/21	10nA	45mK		1.54		UCB		Pkg Ch2					LBL	3/22	3.16nA	44.7mK		1.68
4	10_20_B	7/1/2020	Silicon prime	pSi	SEGI	1400	80V	Argon	21	90	3.0	60	CDMS_08_23_19_TC18	after opening Xe line	44.069	0.4897	LBL	2/5/21	10nA	47.5mK		1.82									LBL	3/22	3.16nA	47mK		1.81
5	10_20_C	7/9/2020	Silicon prime	pSi	SEGI	1400	80V	Argon	21	90	3.0	60	CDMS_08_23_19_TC18	after running Xe deps	42.637	0.4737	LBL	2/5/21	10nA	47mK		1.81									LBL	3/22	3.16nA	46.4mK		1.96
6	10_20_D	7/9/2020	Silicon prime	pSi	SEGI	1400	80V	Xenon	21	72	3.0	60	CDMS_07_02_20_Xe_1_TC	Xenon flow 40sccm	40.99	0.5693	LBL	2/5/21	1nA	<10mK		3.45		UCB		Pkg Ch3,7					LBL	3/22	1nA	NA		1.12
7	10_20_E	7/10/2020	Silicon prime	pSi	SEGI	1400	80V	Xenon	10	90	3.0	60	CDMS_07_10_20_Xe_TC10mt	40sccm	42.37	0.4708	LBL	2/5/21	3.16nA	<10mK		1.72		UCB		Pkg Ch4					LBL	3/22	1nA	NA		1.25
8	10_20_F	7/10/2020	Silicon prime	pSi	SEGI	1400	80V	Xenon	15	81	3.0	60	CDMS_07_10_20_Xe_TC15mt	40sccm	42.36	0.523	LBL	2/5/21	3.16nA	<10mK		5.05		UCB		Pkg Ch5,9					LBL	3/22	1nA	NA		1.13
9	10_20_G	7/13/2020	Silicon prime	pSi	SEGI	1400	80V	Xenon	8	96	3.0	60	CDMS_07_13_20_Xe_TC8mt	40sccm	40.9	0.426	LBL	2/5/21	10nA	<10mK		2.50		UCB		Pkg Ch6,10					LBL	3/22	1nA	NA		1.33
10	10_20_H		Silicon prime	pSi	AJA	400	Float	Argon	5	123	70	0	Manual	Shubham Run, expect very low TC			LBL	2/5/21	10nA &3.16nA	51mK		2.73									LBL	3/22	3.16nA	50mK		2.2
11	10_20_I	1/27/2020	Silicon prime	pSi	SEGI	1400	80V	Argon	21	90	2.8	60	CDMS_01_23_20_TC	PD2 #3 and 4 Witness Sample			LBL	2/5/21	10nA	66.5mK		1.48									LBL	3/22	3.16nA	66.3mK		1.59
12	10_20_J	10/1/2020	Silicon prime	pSi	SEGI	1400	80V	Argon	21	90	3.0	60	CDMS_08_23_19_TC18	Recent Dep to see where TC is now			LBL	1/28/22	3 nA	48.31 mK	265	1.60	Warmup; cooldown has alpha 354, Tc = 48.73
13
14
15
16
17	TC Sam #	Dep date	Substrate	Base	Tool	Power	DC Bias	Gas	Press	Seconds	T/S	Cool/heat	Recipe	Notes	Thick	Rate
18	10_20_K	10/7/2020	Silicon prime	pSi	SEGI	1400	80V		21	102	3.0	60	CDMS_10_07_20_TC_50nm	Inverted Test TC Received 50nmW, airbreak, argon etch + 600nm Al, AL etch			LBL	1/28/22	3 nA	42.66 mK	168	1.58	Warmup; cooldown has alpha 195, Tc = 43.03
19	10_20_L	10/12/2020	Silicon prime	pSi	SEGI	1400	80V	Argon	21	90	3.0	60	CDMS_08_23_19_TC18	Standard TC recipe on for refferrence			LBL	1/28/22	3 nA	46.52 mK	128	1.87	Warmup; cooldown has alpha 157, Tc = 46.82
20	10_20_M	10/12/2020	Silicon prime	pSi	SEGI	1400	80V	Argon	21	90	3.0	60	CDMS_08_23_19_TC18	Sample 10_20_L after 120C hard bake 2hr			LBL	1/28/22	3 nA	45.00 mK	316	1.77	Warmup; cooldown has alpha 207, Tc = 45.34
21	10_20_N	10/14/2020	Silicon prime	pSi	AJA	400	GND	Argon	5	123	70	22	Preset controller	S28 recipe with bias GND instead of float			LBL	1/28/22	3 nA	> 1K	Unknown	1.00	Transitioned shortly after dil cycle started; RRR not reliable
22	10_20_O	10/14/2020	Silicon prime	pSi	AJA	400	75vdc	Argon	5	123	70	22	Preset controller	S28 recipe with bias -75vdc instead of float			LBL	1/28/22	3 nA	> 1K	Unknown	1.05	Transitioned shortly after dil cycle started; RRR not reliable
23	10_20_P	10/14/2020	Silicon prime	pSi	AJA	400	75vdc	Argon	5	123	70	75	Preset controller	soak at 75c for 30 min before dep, cool in chamber over night			LBL	1/28/22	10 nA	427.2 mK	163	1.41	Warmup
24	10_20_Q	10/15/2020	Silicon prime	pSi	AJA	400	75vdc	Argon	5	123	70	100	Preset controller	soak at 100c for 60 min before dep, cool in chamber 1.5hr			LBL	1/28/22	3 nA	> 1K	Unknown	1.34	Transitioned shortly after dil cycle started; RRR not reliable
25	10_20_R	10/15/2020	Silicon prime	pSi	AJA	400	75vdc	Argon	5	123	70	125	Preset controller	soak at 125c for 60 min before dep, cool in chamber over night			LBL	1/28/22	10 nA	348.4 mK	137	1.78	Cooldown
26	10_20_S	10/16/2020	Silicon prime	pSi	AJA	400	75vdc	Argon	7.5	131	70	22	Preset controller	Presuure and time adjustment to explore TC			LBL
27	10_20_T	10/16/2020	Sapphire	none	SEGI	1400	80V	Argon	21	90	3.0	60	CDMS_08_23_19_TC18	Standard TC recipe on Sapphire TC test			LBL	2/5/21	10nA	47mK		1.57		UCB		Pkg Ch1					LBL	3/22	3.16nA	48.4mK		1.49
28	10_20_U	10/16/2020	Silicon prime	pSi	SEGI	1400	80V	Argon	21	90	3.0	60	CDMS_08_23_19_TC18	Witness sample for Sapphire test sample 10_20_T			LBL
29
30
31
32	TC Sam #	Dep date	Substrate	Base	Tool	Power	DC Bias	Gas	Press	Seconds	T/S	Cool/heat	Recipe	Notes
33	11_20_A	11/4/2020	Silicon prime	pSi	SEGI	2500	80V	Argon	8	51	3.0	0	CDMS_01_14_19_Hi_TC	Testing High TC Recipe after SEGI Maint			LBL	2/5/21	10nA	97mK	260	2.14									LBL	3/22	3.16nA	96.4mK		2.16
34	11_20_B	11/4/2020	Silicon prime	pSi	SEGI	1400	80V	Argon	21	90	3.0	60	CDMS_08_23_19_TC18	Testing Low TC Recipe after SEGI Maint			LBL	2/5/21	10nA	46mK		1.56		UCB		Pkg Ch8					LBL	3/22	3.16nA	47.5mK		1.67
35
36	TC Sam #	Dep date	Substrate	Base	Tool	Power	DC Bias	Gas	Press	Seconds	T/S	Cool/heat	Recipe		Notes
37	03_21_A	3/2/2021	Si Intrinsic	pSi	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18		Psi Dep 3/2/21 TAMU_02_26_21_aSi_only, base material info below		LBL	5/15/21	10 nA	49.77 mK	148	1.65		LBL	3/22/22	10 nA	47.8 mK	128.6
38	03_21_B	3/2/2021	Si Intrinsic	Bare	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	18k ohm/cm intrinsic FZ			LBL	5/15/21	10 nA	46.56 mK	129	3.37
39	03_21_C	3/2/2021	Sapphire	pSi	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	Psi Dep 3/2/21 TAMU_02_26_21_aSi_only, base material info below			LBL	5/3/21	100 nA, 1 nA	51.95mK	361	1.62
40	03_21_D	3/2/2021	Sapphire	Bare	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	C->M, DSP 650um			LBL	5/17/21	10 nA	50.55 mK	17	4.42	R is not constant with T in the normal region; it linearly increases with T.	LBL	6/10	10 nA	47.99 mK	140	1.7
41	03_21_E	3/2/2021	GaAs	pSi	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	Psi Dep 3/2/21 TAMU_02_26_21_aSi_only, base material info below			LBL	5/3/21	100 nA	49.69mK	403	1.64
42	03_21_F	3/2/2021	GaAs	Bare	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	undoped GaAS			LBL	5/17/21	10 nA	48.19 mK	86	2.04
43	03_21_G	3/2/2021	Si/SiO2	pSi	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	Psi Dep 3/2/21 TAMU_02_26_21_aSi_only, base material info below			LBL	5/15/21	10 nA	52.08 mK	171	1.66
44	03_21_H	3/2/2021	Si/SiO2	Sio2	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	90nm Thermal oxide on 1-10 ohm/cm prime			LBL	5/15/21	10 nA	45.55 mK	118	2.61
45	03_21_I	3/2/2021	Quartz	pSi	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	Psi Dep 3/2/21 TAMU_02_26_21_aSi_only, base material info below			LBL	5/17/21	10 nA	50.67 mK	101	1.82
46	03_21_J	3/2/2021	Quartz	Bare	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	Single Crystal Quartz, ST-Cut, seeded,ssp			LBL	5/17/21	10 nA	46.39 mK	45	2.55		LBL	6/10	10 nA	45.60 mK	71	2.41
47	03_21_K	3/5/2021	Silicon prime	pSi	SEGI	1400	80V	Xenon	21	54	3	60	TAMU_03_05_21_XE21mt_30nm	CDMS_07_02_20_Xe_1_TC adjusted time for 30nm film			LBL	4/26/21	10nA	-	-	1.60
48	03_21_L	3/5/2021	Silicon prime	pSi	SEGI	1400	80V	Xenon	21	36	3	60	TAMU_03_05_21_XE21mt_20nm	CDMS_07_02_20_Xe_1_TC adjusted time for 20nm film			LBL	4/26/21	10nA	-	-	0.94
49	03_21_M	3/5/2021	Silicon prime	pSi	SEGI	1400	80V	Xenon	10	66	3	60	TAMU_03_05_21_Xe10mt_30nm	CDMS_07_10_20_Xe_TC10mt adjusted time for 30nm film			LBL	4/26/21	10nA	-	-	1.20		LBL	May 4	100 nA	-		1.19
50	03_21_N	3/8/2021	Silicon prime	pSi	SEGI	1400	80V	Xenon	10	45	3	60	TAMU_03_05_21_Xe10mt_20nm	CDMS_07_10_20_Xe_TC10mt adjusted time for 20nm film			LBL	4/26/21	10nA	-	-	1.18		LBL	May 4	100 nA	-		1.18
51	03_21_O	3/8/2021	Silicon prime	pSi	SEGI	1400	80V	Xenon	15	57	3	60	TAMU_03_08_21_Xe15mt_30nm	CDMS_07_10_20_Xe_TC15mt adjusted time for 30nm film			LBL	5/15/21	3 nA	-	-	1.38
52	03_21_P	3/8/2021	Silicon prime	pSi	SEGI	1400	80V	Xenon	15	39	3	60	TAMU_03_08_21_Xe15mt_20nm	CDMS_07_10_20_Xe_TC15mt adjusted time for 20nm film			LBL	5/15/21	1 nA	-	-	1.27
53	03_21_Q	3/9/2021	Silicon prime	pSi	SEGI	1400	80V	Xenon	8	72	3	60	TAMU_03_09_21_Xe8mt_30nm	CDMS_07_13_20_Xe_TC8mt adjusted time for 30nm film			LBL	5/15/21	3 nA	-	-	1.77
54	03_21_R	3/9/2021	Silicon prime	pSi	SEGI	1400	80V	Xenon	8	48	3	60	TAMU_03_09_21_Xe8mt_20nm	CDMS_07_13_20_Xe_TC8mt adjusted time for 20nm film			LBL	5/15/21	3 nA	-	-	1.65
55	03_21_S	3/9/2021	Silicon prime	pSi	SEGI	1000	80V	Argon	21	102	3	60	TAMU_03_09_21_1kW_TC_test	TAMU_06_05_20_TC_test reduced to 1kw			LBL	6/10/21	10 nA	43.3 mK	90	2.30
56	03_21_T	3/10/2021	Silicon prime	pSi	SEGI	1400	80V	Argon	21	90	3	60	CDMS_08_23_19_TC18	Standard recipe on prime + aSi after Xe deps			LBL	6/10/21	10 nA	48.58 mK	126	2.09
57
58
59
60	TC Sam #	Dep date	Substrate	Base	Tool	Power	DC Bias	Argon, Xenon	Press	Seconds	T/S	Cool/heat	Recipe	Notes
61	05_21_A	5/24/2021	Silicon prime	pSi	SEGI	2500	80V	0, 40	8	51	3	0	TAMU_05_24_21_T1_Xe	Modified for 100% Xe gas CDMS_01_14_19_Hi_TC			LBL	7/8/21	3 nA	28.12 mK	39	1.35		LBL	01/22	SQUID <1nA	21-22mK	-	-	monitor SQUID current change		02/28/2022	3nA	22mK	6	1.35
62	05_21_B	5/24/2021	Silicon prime	pSi	SEGI	2500	80V	20, 20	8	51	3	0	TAMU_05_24_21_T2_Xe	50% Xe HI TC test			LBL	7/8/21	10 nA	113.3 mK	241	1.35
63	05_21_C	5/24/2021	Silicon prime	pSi	SEGI	2500	80V	30, 10	8	51	3	0	TAMU_05_24_21_T3_Xe	25% Xenon Hi TC Test			LBL	7/8/21	3 nA	123.1 mK	180	2.26
64	05_21_D	5/24/2021	Silicon prime	pSi	SEGI	2500	80V	35, 5	8	51	3	0	TAMU_05_24_21_T4_Xe	12.5% Xenon Hi TC test			LBL	7/8/21	3 nA	119.4 mK	181	1.53
65	05_21_E	5/25/2021	Silicon prime	pSi	SEGI	1400	80V	45, 5	21	87	3	60	TAMU_05_25_21_T5_Xe	modified for 10% Xe gas CDMS_08_23_19_TC18			LBL	7/8/21	10 nA	49.12 mK	87	2.10
66	05_21_F	5/25/2021	Silicon prime	pSi	SEGI	1400	80V	40, 10	21	87	3	60	TAMU_05_25_21_T6_Xe	modified for 20% Xe gas CDMS_08_23_19_TC18			LBL	7/8/21	3 nA	48.04 mK	71	1.40
67	05_21_G	5/25/2021	Silicon prime	pSi	SEGI	1400	80V	35, 15	21	84	3	60	TAMU_05_25_21_T7_Xe	modified for 30% Xe gas CDMS_08_23_19_TC18			LBL	7/8/21	3 nA	47.09 mK	48	1.27
68	05_21_H	5/25/2021	Silicon prime	pSi	SEGI	1400	80V	30, 20	21	84	3	60	TAMU_05_25_21_T8_Xe	modified for 40% Xe gas CDMS_08_23_19_TC18			LBL	7/8/21	3 nA	32.93 mK	14	1.17
69	05_21_I	5/26/2021	Silicon prime	pSi	SEGI	1400	80V	25, 25	21	81	3	60	TAMU_05_26_21_T9_Xe	modified for 50% Xe gas CDMS_08_23_19_TC18			LBL	7/8/21	-	-	-	1.34
70	05_21_J	5/26/2021	Silicon prime	pSi	SEGI	1400	80V	20, 30	21	81	3	60	TAMU_05_26_21_T10_Xe	modified for 60% Xe gas CDMS_08_23_19_TC18			LBL	7/8/21	-	-	-	1.14
71	05_21_K	5/26/2021	Silicon prime	pSi	SEGI	1400	80V	15, 35	21	78	3	60	TAMU_05_26_21_T11_Xe	modified for 70% Xe gas CDMS_08_23_19_TC18			LBL	7/8/21	-	-	-	1.36
72
73	Sample	Dep Date	Substrate	Base	Tool	Power	Bias	Ar flow	Xe flow	Press	Time	T/S	Cooling	Recipe
74	8_21_A	8/4/2021	Silicon prime	Bare Si	SEGI	2500	80V	0	40	8	51	3	0	TAMU_05_24_21_T1_Xe			LBL	10/20/21	1nA	-	-	1.44	0Ohm at 10mK, not able to measure Tc	LBL	01/22	SQUID <1nA	17-18 mK	-	-	monitor SQUID current change	LBL	02/28/2022	3nA	13mK	15	1.6
75	8_21_B	8/4/2021	Silicon prime	40nm aSi	SEGI	2500	80V	0	40	8	51	3	0	TAMU_05_24_21_T1_Xe			LBL	10/20/21	1nA	-	-	1.45	0Ohm at 10mK, not able to measure Tc	LBL	01/22	SQUID <1nA	22-23mK	-	-	monitor SQUID current change	LBL	02/28/2022	3nA	19mK	48	1.36
76	8_21_C	8/12/2021	Silicon prime	Bare Si	SEGI	2500	80V	0	40	8	48	3	0	TAMU_08_12_21_T1_XE			LBL	10/20/21	1-10nA	-	-	1.29	0Ohm at 33mK, no transition during cool down with 1nA current
77	8_21_D	8/2/2021	Silicon prime	Bare Si	SEGI	2350	80V	0	40	8	57	3	0	TAMU_08_02_21_2350W			LBL	10/20/21	1nA	-	-	1.45	0Ohm at 10mK, not able to measure Tc	LBL	11/21	1nA	-	-	-	Re-mounted. No transition
78	8_21_E	8/12/2021	Silicon prime	Bare Si	SEGI	2200	80V	0	40	8	75	3	0	TAMU_08_12_21_2200W			LBL	10/20/21	1nA	-	-	1.30	0Ohm at 29mK, not able to measure Tc	LBL	11/21	1-10nA	-	-	-	Re-mounted. Random Tc
79	8_21_F	8/12/2021	Silicon prime	Bare Si	SEGI	2050	80V	0	40	8	57	3	0	TAMU_08_12_21_2050W			LBL	10/20/21	1nA	-	-	1.32	0Ohm at 10mK, not able to measure Tc	LBL	11/21	1-10nA	-	-	-	Re-mounted. Random Tc
80	8_21_G	8/3/2021	Silicon prime	Bare Si	SEGI	2500	80V	0	50	10	51	3	0	TAMU_08_03_21_10mt			LBL	10/20/21	10nA	-	-	1.33	No transition	LBL
81	8_21_H	8/3/2021	Silicon prime	Bare Si	SEGI	2500	80V	0	50	12	51	3	0	TAMU_08_03_21_12mt			LBL	10/20/21	10nA	-	-	1.24	No transition	LBL
82	8_21_I	8/3/2021	Silicon prime	Bare Si	SEGI	2500	80V	0	50	14	51	3	0	TAMU_08_03_21_14mt			LBL	10/20/21	10nA	-	-	1.25	No transition	LBL
83	8_21_J	8/4/2021	Silicon prime	Bare Si	SEGI	2500	80V	0	50	16	51	3	0	TAMU_08_04_21_16mt			LBL	10/20/21	10nA	-	-	1.17	No transition	LBL
84	8_21_K	8/4/2021	Silicon prime	Bare Si	SEGI	2050	80V	0	50	12	57	3	0	TAMU_08_04_21_combo			LBL	10/20/21	10nA	-	-	1.24	No transition	LBL
85
86	Sample	Dep Date	Substrate	Base	Tool	Power	Bias	Ar flow	Xe flow	Press	Time	T/S	Cooling	Recipe	Thick
87	TAMU_02_22_A	2/14/2022	Silicon Prime	Bare Si	SEGI	1400	80	50	0	21	90	3	0	CDMS_08_23_19_TC18	43.971		LBL	02/28/22	3nA	53.3 mK	135	1.92
88	TAMU_02_22_B	2/14/2022	Silicon Prime	Bare Si	SEGI	2500	80	40	0	8	51	3	0	CDMS_01_14_19_Hi_TC	35.68		LBL	02/28/22	3nA	109.8 mK	117	1.42
89	TAMU_02_22_C	2/14/2022	Silicon Prime	Bare Si	SEGI	1400	80	50	0	21	90	2.8	0	CDMS_01_23_20_TC_1mm	32.953		LBL	02/28/22	3nA	78.4mK	91	1.49
90	TAMU_02_22_D	2/15/2022	Silicon Prime	Bare Si	SEGI	2500	80	0	50	8	51	3	0	TAMU_05_24_21_T1_XE	44.57		LBL	02/28/22	3nA	40.0mK	54	2.10
91	TAMU_02_22_E	2/15/2022	Silicon Prime	Bare Si	SEGI	1400	80	30	20	21	84	3	0	TAMU_05_25_21_T8_XE	41.871		LBL	02/28/22	3nA	56.9mK	33	1.64
92	TAMU_02_22_F	2/15/2022	Silicon Prime	Bare Si	AJA	400	Float	20	0	5	123	70	0	PS timed	42.234		LBL	02/28/22	3nA	38.6mK	123	1.75
93	TAMU_02_22_G	2/15/2022	Silicon Prime	Bare Si	AJA	400	Float	20	0	5	123	70	0	PS timed	38.937		LBL	02/28/22	3nA	44.4mK	45	1.77
94	TAMU_02_22_H	2/16/2022	Silicon Prime	Bare Si	AJA	400	GND	20	0	5	123	70	0	PS timed	40.287		LBL	02/28/22	3nA	-	-	1.31	No transition
95	TAMU_02_22_I	2/16/2022	Silicon Prime	Bare Si	AJA	400	75	20	0	5	123	70	0	PS timed	40.217		LBL	02/28/22	3nA	41.6mK	123	1.61
96
97	TC Sam #	Dep date	Substrate	Base	Tool	Power	DC Bias	Ar flow	Xe flow	Press	Seconds	T/S	Cooling	Recipe	Thick	Sample Sheet Resistance [Ω/sq]
98	Stress Wafer #1	3/14/2022	Silicon	Bare	SEGI	1400	80	50	0	21	90	3	0	CDMS_08_23_19_TC18	28	3.9, 3.8, 3.8, 4.0, 4.4	LBL	4/29/22	10 nA	52.7 mK	186	1.64					position C 50.5mK
99	Stress Wafer #2	3/14/2022	Silicon	Bare	SEGI	2500	80	40	0	8	51	3	0	CDMS_01_14_19_Hi_TC	28	5.9	LBL	4/29/22	10 nA	103.3 mK	364	1.43
100	Stress Wafer #3	3/15/2022	Silicon	Bare	SEGI	1400	80	50	0	21	90	2.8	0	CDMS_01_23_20_TC_1mm	39	4.5	LBL	4/29/22	10 nA	59.5 mK	189	1.65