7.33 Centura-MET Plasma Etch QM
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Centura-MET Plasma Etch Monitor
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Process Specification:Process Performance
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Tool Name:Centura-MET
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Description:This monitor tracks (1) etch rate of Aluminum, (2) uniformity, and (3) Al:PR photoresist selectivity of MET Al-ME for Centura-MET.
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Etch Recipe:MET Al-ME
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Etch Time [sec]:10
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Targeted Results:
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Etch Rate [A/min]:6000
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Uniformity [%]:<10
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Photoresist Selectivity:
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Process Conditions:
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RF Power [Watts]:1000BCL3 [sccm]:45
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Bias Power [Watts]:100CL2 [sccm]:90
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Pressure [mT]:10
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QM Process Procedure:
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StepToolDescription
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Stock WaferTystar2:1kA Oxide
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ALN2:7.5kA Al (3)
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PhotolithographyPrimeoven:#2
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picotrack 1T1_OiR906-1.2um_noHMDS
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GCAWS6:Etch Monitor Mask
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Hand Develop:MicroDev (1:1 Dev:DI mix)
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Technics-c:Descum
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Oven:120C 1hr in oven hardbake
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ASIQ1ASIQ:5 point step height, pre-etch
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EtchCentura-MET:MET-AL-ETCH
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ASIQ2ASIQ:5 point step height, post-etch
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PR StripMatrix:Strips PR from wafers
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ASIQ3ASIQ:5-point step height, post-strip
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SEMFEI/Zeiss SEM:SEM inspection
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SEMFEI/Zeiss SEM:SEM inspection
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