ABCDEFGHIJKLMN
1
2
Tystar10 - 10SUPLYA
3
4
Process Specification
Process Performance
5
Tool Name:Tystar10
6
Description: This monitor tracks polysilicon thickness and uniformity.
7
8
Recipe:10SUPLYA // 2N2ANNLA
9
Layer Material: Undoped polysilicon
10
11
12
Targeted Results:
13
TargetDescription
14
Thickness [A]:3300Measured using ellips
15
16
Non-uniformity [%]:<10Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
17
18
19
Process Conditions:
20
Deposition:
21
SiH4 [sccms]:120
22
Temperature [degrees C]:
615
23
Time [HH:MM:SS]:00:30:00
24
25
QM Process Procedure:
26
StepToolDescription
27
Stock WaferNew Wafer
6-inch P-Type Test Wafer
28
Oxide Growthtystar21k oxide growth
29
Flexus1flexusInitial stress measurement
30
Undoped Poly Depositiontystar1030 minute undoped-poly deposition
31
Annealtystar230 minute anneal at 950 degrees
32
Film Thickness / RIellips5-point film thickness / RI
33
Backside EtchLAM8Clear backside
34
Flexus2flexusFinal stress measurement
35
36
37
38
39
40
41
42
43
44
45
46
47