5.10 Tystar10 - 10SUPLYA
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Tystar10 - 10SUPLYA
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Process Specification
Process Performance
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Tool Name:Tystar10
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Description: This monitor tracks polysilicon thickness and uniformity.
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Recipe:10SUPLYA
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Layer Material: Undoped polysilicon
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Targeted Results:
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TargetDescription
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Thickness [A]:3200Measured using nanoduv
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Non-uniformity [%]:<10Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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Process Conditions:
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Deposition:
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SiH4 [sccms]:120
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Temperature [degrees C]:
615
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Time [HH:MM:SS]:00:30:00
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QM Process Procedure:
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StepToolDescription
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Stock WaferNew Wafer
6-inch P-Type Test Wafer
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Oxide Growthtystar21k oxide growth
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Flexus1flexusInitial stress measurement
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Undoped Poly Depositiontystar1030 minute undoped-poly deposition
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Film Thickness / RInanoduv5-point film thickness / RI
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Backside etchtechnics-cClear backside
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Flexus2flexusFinal stress measurement
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