7.11 Lam6 Plasma Etch QM
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Lam6 Plasma Etch Monitor
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Process SpecificationProcess Performance
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Tool Name:Lam6
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Description: This monitor tracks the (1) etch rate of Thermal SiO2, (2) uniformity, and (3) SiO2:PR photoresist selectivity of 6001_OXIDE_ME for Lam6.
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Etch Recipe:6001_OXIDE_ME
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Etch Time [sec]:30
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Targeted Results:
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Etch Rate [A/min]:7000
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Uniformity [%]:<5
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Photoresist Selectivity:4
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Process Conditions:
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Gap Setting [cm]:1.2CF4 [sccm]:25
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RIE RF Power [Watts]:
750He [Torr]:4
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Ar [sccm]:150Press [mTorr]:55
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CHF3 [sccm]:25
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QM Process Procedure:
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StepToolDescription
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Stock WaferTystar2:10kA Oxide
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Photolithographyprimeoven:#2
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picotrack1:T1_UV210-0.6_0.9um_noHMDS
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ASML:Etch Monitor Mask
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picotrack2:MF 26A, 60s HPO
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Technics-c:Descum
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Axcelis:UV Hardbake, program U
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FT1Nano Duv:Pre-etch 5 point film thickness
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ASIQ1ASIQ:5 point step height, pre-etch
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Etchlam6:6001_OXIDE_ME
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FT2Nano Duv:Post-etch 5 point film thickness
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ASIQ2ASIQ:5 point step height, post-etch
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