Demis[example with highlighted info]_SiO2 LDR250C

	A	B	C	D	E	F	G	H	I	J	K
1	SiO2 LDR 250C
2	Category name	SiO2 LDR - Std.
3	Sequence name	SiO2 LDR250C
4	Purpose	Argon Surface Prep					Deposition			Post Deposition
5	Sub Sequence name	Pre dep 250C-SEQUENCE								Post Dep PD-Purge-SEQUENCE
6	Process step name	Pre Dep 250C Pumpdown	Pre Dep 250C O2Ar Gas Stab	Pre Dep 250C O2Ar Ignition	Pre Dep 250C O2Ar Plasma	Pre Dep 250C Pumpdown	SiO2 LDR 250C Gas Stab	SiO2 LDR 250C Ignition	SiO2 LDR 250C Dep	Post Process Flush	Post Process Pumpdown
7	Parameters
8	Process time (sec)	30	15	3	90	30	30	3	As required	30	30
9	Pressure (mTorr)	0	5	5	5	0	5	5	5	10	0
10	Temperature2 (deg C)	250	250	250	250	250	250	250	250	250	250
11	HeliumCoolerPressureSetpoint(mTorr)	5000	5000	5000	5000	5000	5000	5000	5000	5000	5000
12	RF1 Forward Power (W)	0	0	130	0	0	0	150	15	0	0
13	RF2 Forward Power (W)	0	0	600	600	0	0	800	800	0	0
14	SiH4 100% (sccm)	0	0	0	0	0	5	5	5	0	0
15	N2 500 (sccm)	0	0	0	0	0	0	0	0	100	0
16	AR 100 (sccm)	0	50	50	50	0	0	0	0	0	0
17	O2 100 (sccm)	0	0	0	0	0	15	15	15	0	0
18	N2 20 (sccm)	0	0	0	0	0	0	0	0	0	0
19					↑ This is the Ar preclean step. Apparently some users changed this to O2 or Ar/O2? Would prefer for this to be an O2 step, not Ar.				↑ This is the main Dep step, set the TIME appropriately, do not change any other parameters.
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