4.21 Ksaligner I-Line Exposure Dose (1.2um & 2.8um)
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4.21 - Exposure of i-line OiR906-12 (1.2 μm and 2.8 μm) on ksaligner
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Description:This monitor tracks i-line OiR906-12 resist performance on ksaligner for 1.2 μm and 2.8 μm resist thicknesses. This monitor includes: 1) 1.2 μm i-line dose to clear, 2) 2.8 μm i-line dose to clearOutput Response
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ResponseDescriptionTargetUSLLSL
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Tool:Ksaligner1.2 μm Dose (mJ/cm²)Characterize best exposure time for the 1.2 μm samples and use that to calculate the required dose. Check the wafer for smallest resolved feature. The wafer with the smallest well-resolved features is chosen for the best exposure time. Exposure dose is calculated using the equation (ExposureTime)*(LampIntensity)=Dose.407010
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Resist and Developer:OiR906-12 i-line photoresist and MF26A developer
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Mask:"Elbows Monitor" (Clearfield)
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Up-stream:Starting wafer is bare Si2.8 μm Dose (mJ/cm²)Characterize best exposure time for the 2.8 μm samples and use that to calculate the required dose. Check the wafer for smallest resolved feature. The wafer with the smallest well-resolved features is chosen for the best exposure time. Exposure dose is calculated using the equation (ExposureTime)*(LampIntensity)=Dose.10014060
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If new silicon wafer: clean in MSINK6 Piranha (10 minutes), MSINK6 HF (1 min)
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If stripping old litho wafer: clean in MSINK1 1165 (10 minutes), MSINK8 Pirahnha (10 minutes), MSINK8 HF (1 min)
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Down-stream:Patterned wafer is inspected and then retired (stripped and rerun)
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Tool SpecificationsProcess Performance
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StepToolSettings - 1.2 μm ProcessSettings - 2.8 μm Process
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4.21.1 - Prime/Coat/Soft Bake(svgcoat6)Flow: 01_OIR1.2um_Bake60s90CFlow: 01_OIR2.8um_Bake60s90C
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VP: HMDS_60sVP: HMDS_60s
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CHILL1: Cool_6sCHILL1: Cool_6s
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SMC: OIR906_1.2umSMC: OIR906_2.8um
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HPO: Bake60s90CHPO: Bake60s90C
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CHILL2: Cool_6sCHILL2: Cool_6s
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4.21.2 - Expose(ksaligner)Check lamp intensity with the G&R Labs Intensity Meter using a 5-point measurement at 5 cm intervals. More lamp intensity information is included in the ksaligner Lamp Intensity Process Specification. Compare meter reading to power supply reading and check the uniformity. Expose wafers in hard contact mode. Run one wafer per exposure time, 2 seconds apart.
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4.21.3 - Develop(svgdev6)Flow: 01_PEB120C60s_MF26A60s
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HPO1: Bake60s120C
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CHILL1: Chill_5s
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MDTD: MF26A_Puddle60s
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HPO2: HPO2_Bypass
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CHILL2: No Chill
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