ICP2 GaAs Etching Data

	A	B	C	D	E	F	G	H	I	J
1		ICP #2 Recipe: 0.5Pa, 100/900W, N2/Cl2 = 10/20 sccm, time = 180 s
2		Sample: GaAs substrate, with patterned SiO2 hardmask
3	Date	Sample #	Etch Rate (nm/min)	Etch Selectivity (GaAs/SiO2)	Observations/Notes	Link to SEMs	Cross Section SEM	Sidewall SEM	Exclude from SPC?	Exclude from plot?

4	10/30/25	251023ICP2-GaAs	1044.8	25.0		SEMs
5	10/23/25	251023ICP2-GaAs	943.6	26.5
6	10/16/25	251016ICP2-GaAs	1021.2	27.8
7	10/14/25	251014ICP2-GaAs	994.8	27.5	Akhila	SEMs
8	9/30/25	250930ICP2-GaAs	983.3	23.6	Akhila/Noah Training	SEMs
9	9/27/25	250928ICP2-GaAs	995.9	25.4
10	9/21/25	250907ICP2-GaAs	1039.0	28.3		SEMs
11	9/7/25	250907ICP2-GaAs	1023.0	27.1		SEMs
12	8/30/25	250830ICP2-GaAs	1070.3	28.3		SEMs
13	8/24/25	250824ICP2-GaAs	1019.5	27.7	Data is back to normal	SEMs
14	8/16/25	250816ICP2-GaAs	1077.5	26.2	Very high etch rate. SiO2 etch rate was also high on the same day	SEMs
15	8/10/25	250810ICP2-GaAs	1026.1	28.3		SEMs
16	8/2/25	250802ICP2-GaAs	1018.8	27.8		SEMs
17	7/27/25	250727ICP2-GaAs	986.9	27.2		SEMs
18	7/17/25	250717ICp2-GaAs	1003.4	27.9		SEMs
19	7/9/25	250709ICP2-GaAs	995.8	29.0		SEMs
20	6/27/25	250627ICP2-GaAs	997.3	27.2		SEMs
21	6/19/25	250619ICP2-GaAs	992.4	26.5		SEMs
22	6/3/25	250603ICP2-GaAs	1031.0	28.0		SEMs
23	5/26/25	250526ICP2-GaAs	1035.4	28.3		SEMs
24	5/21/25	250521ICP2-GaAs	1031.9	27.9		SEMs
25	5/14/25	250514ICP2-GaAs	1021.5	25.4		SEMs
26	5/8/25	250508ICP2-GaAs	1055.3	27.2		SEMs
27	4/29/25	250429ICP2-GaAs	1004.0	25.6		SEMs
28	4/25/25	250425ICP2-GaAs	925.0	26.6	happened after attempted Gas change, previous user experienced an error mid etch and had to manually transfer wafer out	SEMs
29	4/16/25	250416ICP2-GaAs	993.9	24.4		SEMs
30	4/4/25	250404ICP2-GaAs	1010.3	27.0	Training with Terry
31	3/21/25	250321ICP2-GaAs	1029.3	27.3		SEMs
32	3/15/25	250315ICP2-GaAs	1007.4	26.2		SEMs
33	3/13/25	250313ICP2-GaAs	1027.9	27.9		SEMs
34	3/7/25	250307ICP2-GaAs	995.0	27.0		SEMs
35	3/4/25	250304ICP2-GaAs	949.1	23.0		SEMs
36	2/27/25	250227ICP2-GaAs	947.9	25.3		SEMs
37	2/25/25	250225ICP2-GaAs	992.6	25.7		SEMs
38	2/21/25	250221ICP2-GaAs	1014.9	27.8		SEMs
39	2/6/25	250206ICP2-GaAs	1002.0	26.0	this sample was ran 2/6, but official decision to change recipe to 0.5Pa happened on 2/12
40		Changed recipe to have 0.5Pa pressure, all other parameters continued the same 2/12/25
41	2/11/25	250211ICP2-GaAs	662.4	15.9					y	y
42	2/5/25	250205ICP2-GaAs	710.8	19.9	Inital 0.2 Pa Etch for GaAs Etch Experiment (Terry had to change parameters in recipe because an anonymous user edited this recipe)	SEMs			y	y
43		Lee fully cleaned chamber and serviced throttle valve 2/4/25
44	1/29/25	250129ICP2-GaAs	627.5	17.7					y	y
45	1/20/25	250120ICP2-GaAs	723.6	20.3	Lee did partial clean of system on 1/17	SEMs			y	y
46	1/16/25	250116ICP2-GaAs	589.6	18.3		SEMs			y	y
47	1/13/25	250113ICP2-GaAs	561.4	18.5					y	y
48	1/10/25	250110ICP2-GaAs	575.3	18.3					y	y
49	1/8/25	250108ICP2-GaAs	558.9	17.7					y	y
50	1/3/25	250103ICP2-GaAs	615.8	18.7		SEM			y	y
51	1/2/25	250102ICP2-GaAs	618.5	15.9		SEM			y	y
52		Officially claimed Staff slot #120 in Panasonic ICP2 Noah/Lee
53	12/12/24	241212ICP2-GaAs	464.0	15.3					y	y
54	12/10/24	241210ICP2-GaAs	533.9	16.6		SEM			y	y
55	12/6/24	241206ICP2-GaAs	612.5	18.3					y	y
56	12/5/24	241205ICP2-GaAs	625.2	18.1	forgot DI rinse after taking out of ICP2				y	y
57	11/26/24	241126ICP2-GaAs	700.2	19.3	using German Intern recipe "GaAs_02" with 100W bias.	11/26/24			y	y
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