ICP2 GaAs Etching Data

	A	B	C	D	E	F	G	H	I	J
1		ICP #2 Recipe: 0.5Pa, 100/900W, N2/Cl2 = 10/20 sccm, time = 180 s
2		Sample: GaAs substrate, with patterned SiO2 hardmask
3	Date	Sample #	Etch Rate (nm/min)	Etch Selectivity (GaAs/SiO2)	Observations/Notes	Link to SEMs	Cross Section SEM	Sidewall SEM	Exclude from SPC?	Exclude from plot?

4	9/7/25	250907ICP2-GaAs	1023.0	27.1		SEMs
5	8/30/25	250830ICP2-GaAs	1070.3	28.3		SEMs
6	8/24/25	250824ICP2-GaAs	1019.5	27.7	Data is back to normal	SEMs
7	8/16/25	250816ICP2-GaAs	1077.5	26.2	Very high etch rate. SiO2 etch rate was also high on the same day	SEMs
8	8/10/25	250810ICP2-GaAs	1026.1	28.3		SEMs
9	8/2/25	250802ICP2-GaAs	1018.8	27.8		SEMs
10	7/27/25	250727ICP2-GaAs	986.9	27.2		SEMs
11	7/17/25	250717ICp2-GaAs	1003.4	27.9		SEMs
12	7/9/25	250709ICP2-GaAs	995.8	29.0		SEMs
13	6/27/25	250627ICP2-GaAs	997.3	27.2		SEMs
14	6/19/25	250619ICP2-GaAs	992.4	26.5		SEMs
15	6/3/25	250603ICP2-GaAs	1031.0	28.0		SEMs
16	5/26/25	250526ICP2-GaAs	1035.4	28.3		SEMs
17	5/21/25	250521ICP2-GaAs	1031.9	27.9		SEMs
18	5/14/25	250514ICP2-GaAs	1021.5	25.4		SEMs
19	5/8/25	250508ICP2-GaAs	1055.3	27.2		SEMs
20	4/29/25	250429ICP2-GaAs	1004.0	25.6		SEMs
21	4/25/25	250425ICP2-GaAs	925.0	26.6	happened after attempted Gas change, previous user experienced an error mid etch and had to manually transfer wafer out	SEMs
22	4/16/25	250416ICP2-GaAs	993.9	24.4		SEMs
23	4/4/25	250404ICP2-GaAs	1010.3	27.0	Training with Terry
24	3/21/25	250321ICP2-GaAs	1029.3	27.3		SEMs
25	3/15/25	250315ICP2-GaAs	1007.4	26.2		SEMs
26	3/13/25	250313ICP2-GaAs	1027.9	27.9		SEMs
27	3/7/25	250307ICP2-GaAs	995.0	27.0		SEMs
28	3/4/25	250304ICP2-GaAs	949.1	23.0		SEMs
29	2/27/25	250227ICP2-GaAs	947.9	25.3		SEMs
30	2/25/25	250225ICP2-GaAs	992.6	25.7		SEMs
31	2/21/25	250221ICP2-GaAs	1014.9	27.8		SEMs
32	2/6/25	250206ICP2-GaAs	1002.0	26.0	this sample was ran 2/6, but official decision to change recipe to 0.5Pa happened on 2/12
33		Changed recipe to have 0.5Pa pressure, all other parameters continued the same 2/12/25
34	2/11/25	250211ICP2-GaAs	662.4	15.9					y	y
35	2/5/25	250205ICP2-GaAs	710.8	19.9	Inital 0.2 Pa Etch for GaAs Etch Experiment (Terry had to change parameters in recipe because an anonymous user edited this recipe)	SEMs			y	y
36		Lee fully cleaned chamber and serviced throttle valve 2/4/25
37	1/29/25	250129ICP2-GaAs	627.5	17.7					y	y
38	1/20/25	250120ICP2-GaAs	723.6	20.3	Lee did partial clean of system on 1/17	SEMs			y	y
39	1/16/25	250116ICP2-GaAs	589.6	18.3		SEMs			y	y
40	1/13/25	250113ICP2-GaAs	561.4	18.5					y	y
41	1/10/25	250110ICP2-GaAs	575.3	18.3					y	y
42	1/8/25	250108ICP2-GaAs	558.9	17.7					y	y
43	1/3/25	250103ICP2-GaAs	615.8	18.7		SEM			y	y
44	1/2/25	250102ICP2-GaAs	618.5	15.9		SEM			y	y
45		Officially claimed Staff slot #120 in Panasonic ICP2 Noah/Lee
46	12/12/24	241212ICP2-GaAs	464.0	15.3					y	y
47	12/10/24	241210ICP2-GaAs	533.9	16.6		SEM			y	y
48	12/6/24	241206ICP2-GaAs	612.5	18.3					y	y
49	12/5/24	241205ICP2-GaAs	625.2	18.1	forgot DI rinse after taking out of ICP2				y	y
50	11/26/24	241126ICP2-GaAs	700.2	19.3	using German Intern recipe "GaAs_02" with 100W bias.	11/26/24			y	y
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100