5.17 Tystar17 - 17STDNITA

	A	B	C	I
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2	Tystar17 - 17STDNITA
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4	Process Specification			Process Performance
5	Tool Name:	Tystar17
6	Description:	This monitor tracks nitride thickness and uniformity.
7	Description:	This monitor tracks nitride thickness and uniformity.
8	Recipe:	17STDNITA
9	Layer Material:	nitride on silicon
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11	Targeted Results:
12		Target	Description
13	Thickness [A]:	1100	Measured using nanoduv
14	Thickness [A]:	1100	Measured using nanoduv
15	Uniformity [%]:	>90%	Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
16	Uniformity [%]:	>90%
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18	Process Conditions:
19	Deposition:
20	O2 [sccms]:
21	SiH4 [sccms]:		90
22	PH3[sccms]
23	Temperature [degrees C]:		800
24	Time [min]:		30
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26	QM Process Procedure:
27	Step	Tool	Description
28	Stock Wafer	New Wafer	6-inch P-Type Test Wafer
29	Stress 1	flexus	Initial stress test
30	Nitride Growth	Tystar17	30 minute nitride growth
31	Backside Etch	technics-c	5-point film thickness/RI
32	Stress 2	flexus	Final stress test
33	FT1	nanoduv	5-point film thickness/RI
34	Backside etch	technics-c	Clear backside
35	FTIR	ftir	Molecular spectrum measurement
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37	Latest FTIR Measurement:		08-29-2018
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