ABCDEFGHIJKLMNOPQRSTUVWXYZAA
1
Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 s
2
3
Date
(link to data)		Sample #Etch Rate (nm/min)Etch Selectivity (SiO2/PR)Observations/NotesLink to SEMsCross Section SEMSidewall SEMExclude from SPC?Exclude from plot?Ellipsometer Etch RateMean Etch RateMean Etch Rate -10%Mean Etch Rate +10%Mean SelectivityMean Selectivity -10%Mean Selectivity +10%
4
9/19/2025250919FICP-SiO2285SEMS
5
9/13/2025250913FICP-SiO2278SEMS
6
9/6/2025250906FICP-SiO2280 SEMS
7
Maintenance Event 09/04/25: Foong/Noah vented + scrub cleaned chamber
8
8/29/2025250829FICP-SiO2286SEMS
9
8/22/2025250822FICP-SiO2282SEMS
10
8/15/2025250815FICP-SiO2284SEMS
11
8/8/2025250808FICP-SiO2287SEMS
12
8/1/2025250801FICP-SiO2276SEMS
13
7/18/2025250718FICP-SiO2287
14
7/11/2025250711FICP-SiO2286SEMS
15
7/4/2025250704FICP-SiO2286Tiny scratch made during cleaning of oil from the backside of sample
16
6/26/2025250626FICP-SiO2285Diego First CalSEMS
17
6/10/2025250610FICP-SiO2288remeasured by Noah, small pieceSEMS
18
6/6/2025250606FICP-SiO2290remeasured by Noah, small pieceSEMS
19
5/31/2025250531FICP-SiO2271much lower He flow to reach pressure ~ 2sccmSEMS
20
5/21/2025250521FICP-SiO2273much lower He flow to reach pressure ~ 2sccmSEMsN/A
21
Maintenance Event 05/20/25: Don tightened clamp down
22
5/16/2025250516FICP-SiO2271Needed above average He flow to get to the specified He backside pressureSEMs
23
Maintenance Event 04/23/25: Tony fixed Backside He leak by tigtening clamp
24
4/22/2025250422FICP-SiO2283Put a little too much oil on the carrier wafer
which caused oil to come to the top of the wafer.
Black ring around the wafer flat is misaligned from
wafer major flat.
25
4/7/2025250407FICP-SiO2283
26
4/3/2025250403FICP-SiO2284
27
3/9/2025250309FICP-SiO2289
28
2/22/2025250222FICP-SiO2290
29
2/9/2025250209FICP-SiO2282
30
1/30/2025250130FICP-SiO2-2287
31
1/30/2025250130FICP-SiO2287
32
1/23/2025250123FICP-SiO2292
33
1/20/2025250120FICP-SiO2279SEM
34
1/15/2025250115FICP-SiO2286SEM
35
1/7/2025250107FICP-SiO2284SEM
36
12/14/2024241214FICP-SiO2283SEM
37
12/12/2024241212FICP-SiO2281second etch post phase/mag detector zero in the ICP by tonySEM
38
12/6/2024241206FICP-SiO2286First etch post phase/mag detector zero in the ICP by tony
39
12/2/2024241202FICP-SiO2275First post clamp change by tonySEM
40
Maintenance Event 12/2/24: Clamp Change
41
11/25/2024241125FICP-SiO2265Y
42
11/19/2024241119FICP-SiO2272SEM
Y
43
11/12/2024241112FICP-SiO2265Y
44
11/5/24241105FICP-SiO2273SEMs
Y
45
10/30/24241030FICP-SiO2268Y
46
10/27/24241027FICP-SiO2272SEMs
Y
47
10/16/24241016FICP-SiO2270Y
48
10/8/24241008FICP-SiO2279Y
49
10/2/24241002FICP-SiO2275Y
50
9/27/24240927FICP-SiO2264Y
51
9/25/24240925FICP-SiO2271Y
52
9/23/24240923FICP-SiO2277Y
53
9/20/24240920FICP-SiO2266Y
54
9/19/24240919FICP-SiO2266Y
55
9/18/24240918FICP-SiO2267Y
56
9/17/24240917FICP-SiO2278Y
57
9/5/24240905FICP-SiO2271Y
58
9/3/24240903FICP-SiO2271Y
59
8/29/24240829FICP-SiO2268SEM
Y
60
8/26/24240826FICP-SiO2269Y
61
8/23/24240823FICP-SiO2275Y
62
8/21/24240821FICP-SiO2274Y
63
8/16/24240816FICP-SiO2280Y
64
8/15/24240815FICP-SiO2271Y
65
8/8/24240808FICP-SiO2280Y
66
8/5/24240805FICP-SiO2270Y
67
7/31/24240731FICP-SiO2N/AEtched wrong sideY
68
7/27/24240727FICP-SiO2274Y274
69
7/25/24240725FICP-SiO2266Y266
70
7/23/24240723FICP-SiO2271Y271
71
7/19/24240719FICP-SiO2264Y264
72
7/15/24240715FICP-SiO2274Y274
73
7/9/24240709FICP-SiO2272Y272
74
7/8/24240708FICP-SiO2266Y266
75
7/5/24240705FICP-SiO2271Y271
76
7/3/24240703FICP-SiO2268Y268
77
6/28/24240628FICP-SiO2275Y275
78
6/25/24240625FICP-SiO2-D263Y263
79
6/25/24240625FICP-SiO2-C267Y267
80
6/25/24240625FICP-SiO2-B269Y269
81
6/25/24240625FICP-SiO2-A265this sample significantly bigger than the restY265
82
6/25/24240625FICP-SiO2269Y269
83
6/20/24240620FICP-SiO2275Y275
84
6/18/24240618FICP-SiO2268Y268
85
6/17/24240617FICP-SiO2-2281Y281
86
6/17/24240617FICP-SiO2DCV and reflected power of RF1 is abnormal during etch step. due to RF cable being loose. Somehow came loose during computer maintenanceY217
87
6/14/24240614FICP-InPDCV and reflected power of RF1 is abnormal during etch step

Naming of Sample # should have been "-SiO2" at the end.		Y217
88
6/5/24240605FICP-SiO2-D268Y266
89
6/5/24240605FICP-SiO2-C268Y268
90
6/5/24240605FICP-SiO2-B270Y270
91
6/5/24240605FICP-SiO2-A266Y266
92
6/4/24240604FICP-SiO2-B263Y263
93
6/4/24Forgot to enter ID267Y267
94
5/31/24240531FICP-SiO2-D263Y263
95
5/31/24240531FICP-SiO2-C270Y270
96
5/31/24240531FICP-SiO2-B265Y265
97
5/31/24240531FICP-SiO2-A277Y277
98
5/30/24240530FICP-SiO2281MSE on post etch ellipsometry was 28, could not get under 25. May account for slightly "higher" etch rateY281
99
5/29/24240529FICP-SiO2-D267Y267
100
5/29/24240529FICP-SiO2-C267Y267