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Fluorine ICP: 3.8mT, 50/900W, CHF3/CF4=10/30sccm, time=90 s
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Date
(link to data)
Sample #Etch Rate (nm/min)Etch Selectivity (SiO2/PR)Observations/NotesLink to SEMsCross Section SEMSidewall SEMExclude from SPC?Exclude from plot?Ellipsometer Etch RateMean Etch RateMean Etch Rate -10%Mean Etch Rate +10%Mean SelectivityMean Selectivity -10%Mean Selectivity +10%
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11/16/2025251116FICP-SiO2287SEMs
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11/9/2025251109FICP-SiO2281SEMs
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11/2/2025251102FICP-SiO2283SEMs
7
10/26/2025251026FICP-SiO2282SEMs
8
10/19/2025251019FICP-SiO2290SEMs
9
10/15/2025251015FICP-SiO2283SEMs
10
10/2/2025251002FICP-SiO2283SEMs
11
9/27/2025250927FICP-SiO2282SEMS
12
9/19/2025250919FICP-SiO2285SEMS
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9/13/2025250913FICP-SiO2278SEMS
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9/6/2025250906FICP-SiO2280 SEMS
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Maintenance Event 09/04/25: Foong/Noah vented + scrub cleaned chamber
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8/29/2025250829FICP-SiO2286SEMS
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8/22/2025250822FICP-SiO2282SEMS
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8/15/2025250815FICP-SiO2284SEMS
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8/8/2025250808FICP-SiO2287SEMS
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8/1/2025250801FICP-SiO2276SEMS
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7/18/2025250718FICP-SiO2287
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7/11/2025250711FICP-SiO2286SEMS
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7/4/2025250704FICP-SiO2286Tiny scratch made during cleaning of oil from the backside of sample
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6/26/2025250626FICP-SiO2285Diego First CalSEMS
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6/10/2025250610FICP-SiO2288remeasured by Noah, small pieceSEMS
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6/6/2025250606FICP-SiO2290remeasured by Noah, small pieceSEMS
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5/31/2025250531FICP-SiO2271much lower He flow to reach pressure ~ 2sccmSEMS
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5/21/2025250521FICP-SiO2273much lower He flow to reach pressure ~ 2sccmSEMsN/A
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Maintenance Event 05/20/25: Don tightened clamp down
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5/16/2025250516FICP-SiO2271Needed above average He flow to get to the specified He backside pressureSEMs
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Maintenance Event 04/23/25: Tony fixed Backside He leak by tigtening clamp
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4/22/2025250422FICP-SiO2283Put a little too much oil on the carrier wafer
which caused oil to come to the top of the wafer.
Black ring around the wafer flat is misaligned from
wafer major flat.
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4/7/2025250407FICP-SiO2283
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4/3/2025250403FICP-SiO2284
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3/9/2025250309FICP-SiO2289
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2/22/2025250222FICP-SiO2290
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2/9/2025250209FICP-SiO2282
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1/30/2025250130FICP-SiO2-2287
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1/30/2025250130FICP-SiO2287
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1/23/2025250123FICP-SiO2292
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1/20/2025250120FICP-SiO2279SEM
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1/15/2025250115FICP-SiO2286SEM
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1/7/2025250107FICP-SiO2284SEM
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12/14/2024241214FICP-SiO2283SEM
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12/12/2024241212FICP-SiO2281second etch post phase/mag detector zero in the ICP by tonySEM
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12/6/2024241206FICP-SiO2286First etch post phase/mag detector zero in the ICP by tony
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12/2/2024241202FICP-SiO2275First post clamp change by tonySEM
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Maintenance Event 12/2/24: Clamp Change
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11/25/2024241125FICP-SiO2265Y
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11/19/2024241119FICP-SiO2272SEM
Y
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11/12/2024241112FICP-SiO2265Y
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11/5/24241105FICP-SiO2273SEMs
Y
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10/30/24241030FICP-SiO2268Y
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10/27/24241027FICP-SiO2272SEMs
Y
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10/16/24241016FICP-SiO2270Y
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10/8/24241008FICP-SiO2279Y
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10/2/24241002FICP-SiO2275Y
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9/27/24240927FICP-SiO2264Y
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9/25/24240925FICP-SiO2271Y
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9/23/24240923FICP-SiO2277Y
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9/20/24240920FICP-SiO2266Y
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9/19/24240919FICP-SiO2266Y
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9/18/24240918FICP-SiO2267Y
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9/17/24240917FICP-SiO2278Y
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9/5/24240905FICP-SiO2271Y
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9/3/24240903FICP-SiO2271Y
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8/29/24240829FICP-SiO2268SEM
Y
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8/26/24240826FICP-SiO2269Y
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8/23/24240823FICP-SiO2275Y
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8/21/24240821FICP-SiO2274Y
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8/16/24240816FICP-SiO2280Y
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8/15/24240815FICP-SiO2271Y
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8/8/24240808FICP-SiO2280Y
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8/5/24240805FICP-SiO2270Y
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7/31/24240731FICP-SiO2N/AEtched wrong sideY
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7/27/24240727FICP-SiO2274Y274
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7/25/24240725FICP-SiO2266Y266
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7/23/24240723FICP-SiO2271Y271
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7/19/24240719FICP-SiO2264Y264
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7/15/24240715FICP-SiO2274Y274
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7/9/24240709FICP-SiO2272Y272
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7/8/24240708FICP-SiO2266Y266
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7/5/24240705FICP-SiO2271Y271
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7/3/24240703FICP-SiO2268Y268
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6/28/24240628FICP-SiO2275Y275
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6/25/24240625FICP-SiO2-D263Y263
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6/25/24240625FICP-SiO2-C267Y267
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6/25/24240625FICP-SiO2-B269Y269
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6/25/24240625FICP-SiO2-A265this sample significantly bigger than the restY265
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6/25/24240625FICP-SiO2269Y269
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6/20/24240620FICP-SiO2275Y275
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6/18/24240618FICP-SiO2268Y268
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6/17/24240617FICP-SiO2-2281Y281
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6/17/24240617FICP-SiO2DCV and reflected power of RF1 is abnormal during etch step. due to RF cable being loose. Somehow came loose during computer maintenanceY217
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6/14/24240614FICP-InPDCV and reflected power of RF1 is abnormal during etch step

Naming of Sample # should have been "-SiO2" at the end.
Y217
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6/5/24240605FICP-SiO2-D268Y266
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6/5/24240605FICP-SiO2-C268Y268
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6/5/24240605FICP-SiO2-B270Y270
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6/5/24240605FICP-SiO2-A266Y266
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6/4/24240604FICP-SiO2-B263Y263