5.9 Tystar9 - 9HTOSR
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Tystar9 - 9HTOSR
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Process Specification
Process Performance
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Tool Name:Tystar9
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Description: This monitor tracks oxide thickness and deposition rate.
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Recipe:9HTOSR
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Layer Material: high temperature oxide
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Targeted Results:
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TargetDescription
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Thickness [A]:600Measured using nanoduv
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Non-uniformity [%]:<5Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
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Process Conditions:
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Oxidation:
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NH3 [sccm]:75
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DCS [sccm]:25
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Temperature [degrees C]:
800
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Time [HH:MM:SS]:00:30:00
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QM Process Procedure:
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StepToolDescription
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Stock WaferNew Wafer6-inch P-Type Test Wafer
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Oxide GrowthTystar930 minute oxide growth
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Film Thicknessnanoduv5-point film thickness
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Refractive IndexellipsRI
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