ABCDEFGHIJKLMNOPQRSTUVWXYZ
1
PECVD1 SiO2 250C
2
Process steps CoatDepositionChamber cleaning
3
SiO2 dep (200A chamber coat)SiO2 Deposition CF4/O2 Clean
4
InitialGas Stab Dep/CoatInitial Gas Stab Dep/CoatInitialGas Stab Clean step
5
InitialPurge Evac StepGas StabSiO2 DepPurge Evac StepInitialPurge Evac StepGas StabSiO2 DepPurge Evac StepInitialPurge Evac StepGas StabCF4/O2 clean
6
Tiime (sec)3030103030101030301030
As required
101010202030
As required
7
Pressure (mTorr)2030020900900300202030020900900300202030020300300
8
Temperature (deg C)250250250
9
RF1 Forward Power (W)002200022000300
10
CF4O2 (sccm)5050
11
SiH4 (sccm)100100100100
12
N2 (sccm)190190190190190
13
N2O (sccm)300300300300
14
15
Category: production
16
coat~10min (will coat~20nm)
17
deposition ~ as required
18
clean= coat+dep. time
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100