6.4 MRC944 PVD Sputter QM
 Share
The version of the browser you are using is no longer supported. Please upgrade to a supported browser.Dismiss

 
View only
 
 
ABCDEFGHIJKL
1
2
PVD - MRC944 Sputter
3
4
Process Specification
Process Performance
5
Tool Name:MRC 944
6
Description: This monitor tracks the sputter depostion of Al thickness, uniformity, reflectivity, and the health of the target.
7
Recipe:Al_Monitor
8
Layer Material: Aluminum / 2% Si
9
10
Targeted Results:
11
TargetDescription
12
Thickness [A]:75005 point avg calculated using sheet resistance data from cde-resmap. Resistivity assumed constance unless reflectance changes.
13
Uniformity [%]:<5Calculated using (MAX-MIN) / (MAX+MIN) method on thickness data.
14
Reflectivity [%]:200%5 point avg of reflectivity referenced to p-type Si test wafer. Nanospec program.
15
16
Tool Health Monitoring
17
Critical Value (Must Exceed)ActionDescription
18
Dep Constant: [A * (cm/min)]20000Investigate TargetCalculated from scan speed and thickness.
19
Target Voltage: [V]280Investigate TargetIndicates health of target assembly. Voltage drop expected to track with deposition constant.
20
21
Process Conditions:
22
Sputter Etch:Sputter Deposition:
23
Base Pressure [Torr]:5 E -7Pressure [mTorr]:5
24
Pressure [mTorr]:12Power [W]:4000
25
Power [W]:300Scan Speed (cm/min): 25
26
Time [sec]: 60Number of Passes:8
27
28
QM Process Procedure:
29
StepToolDescription
30
Stock WaferTystar2:1kA Thermal Oxide Wafers (2 wafers).
31
Flexus1FlexusPre-sputter Flexus (at both 0 & 90 degrees)
32
SputterMRC 944Al Monitor: A at left and B at right of 2-wafer palette. Flats facing each other.
33
MRC 944Collect stable voltage during sputter dep.
34
Sheet ResistanceCDE Resmap5 point sheet resistance.
35
Flexus2FlexusPost-sputter flexus. Record 0 & 90 degrees stress data
36
ReflectanceNanospec5 point reflectance measurement. 780nm & 640nm.
37
38
39
40
41
Loading...
Main menu