A gm/Id based approach to design High Gain Folded Cascode Amplifier
Animesh Sharma (MT20317)
Shakti Shrey (MT20323)
Contents:
Design Specifications :
Technology | 180 nm |
Operating Voltage | 1.8V |
Gain | Greater than 70 dB |
Unity Gain Band Width | 10 MHz |
Load Capacitance | 5 pF |
Slew Rate | 5 V/u-sec |
Power | Less than 200 uW |
Design Approach using Square-Law
Decide the Total current from Power constraint and supply voltage available
Budget current in every Branch
Allocating Vov across all transistors according to currents budgeted across them
�Apply square-Law to find aspect ratio across every Tx.�Ids= K(W/L)Vov2
Decide Vbias according to allocated Vov
Perform Simulations
Specifications met?
Design Complete
Change Vov using different W/L
No
Yes
Subject Circuit : The Classical Square Law approach
> Single stage Folded Cascode Op-Amp
Transistor’s Name | Aspect Ratio (W/L) |
M1, M2 | 35u/1u |
M3,M4 | 10u/1u |
M5,M6 | 16u/4u |
M7,M8 | 6u/5u |
M9,M10 | 32u/1u |
M11,M12 | 12u/1u |
Arrived Design Sizings using Square law
Results Achieved using Square Law :
Gain = 73 dB Phase Margin = 57 deg UGB = 8.64 MHz
PSRR = 78.067 dB
Ad = 73.55 dB Acm = -14.86 dB CMRR = Ad - Acm = 88.41 dB
Slew Rate = 3V/usec
Deviation around the Classical Square Law!
Thus, it is a challenging task to fix V(ON) = Vgs - Vt.
Classical Square Law Vs. Simulation Models Approach
Motivation of gm/Id : We must pay IQ to buy gm
Characterisation of gm/Id : nMOS
Effect of gm/Id : Region of Operation
Plot-1: gm/Id Vs. V-ov
Plot-2: gm/gds Vs. gm/Id
Plot-3: fT Vs. gm/Id
Plot-4: fT*(gm/gds) Vs. gm/Id
Id/W Vs gm/Id across different L: Sizing of devices
gm/Id Characterisation : pMOS
Plot-1: gm/Id Vs. V-ov Plot-2: gm/gds Vs. gm/Id
Plot-3: fT Vs. gm/Id Plot-4: fT*(gm/gds) Vs. gm/Id
gm/Id vs Id/W : Operating region
Choice of gm/Id in the Design
Smaller gm/Id | Moderate gm/Id | Large gm/Id |
Strong Inversion Biasing | Moderate Inversion Biasing | Weak Inversion Biasing |
Devices whose gm do-not contribute to gain.
|
|
Devices whose gm do contribute towards gain.
Low Power consumption (Low Id) for given specifications. |
Design Flow : Sizing using gm/Id technique
gm/Id Implementation on Folded Cascode Design
Transistor’s Name | Aspect Ratio (W/L) | gm/Id |
M1, M2 | 50u/1u | 14 |
M3,M4 | 6u/1u | 3.5 |
M5,M6 | 16u/4u | 9.5 |
M7,M8 | 32u/3.5u | 18 |
M9,M10 | 50u/1u | 18 |
M11,M12 | 30u/5u | 9.5 |
Devices | Inversion Region |
M7-M10 | Weak |
M3-M6,�M11-M12 | Strong |
M1-M2 | Moderate |
Results Achieved using gm/Id:
Gain = 91dB Phase Margin = 66 deg UGB = 9.1 MHz
PSRR = 117.51 dB
Ad = 91 dB Acm = -14.86 dB CMRR = Ad - Acm = 108.115 dB
Slew Rate = 3.2 V/usec
Comparative Analysis of Results Achieved!
Parameters | Designed wrt Square-Law | Designed wrt gm/Id |
Technology | 180 nm | 180 nm |
Operating Voltage | 1.8V | 1.8V |
Gain | 73 dB | 91 dB |
Phase Margin | 57 degree | 66 degree |
Unity Gain Band Width | 8.6 MHz | 9.1 MHz |
CMRR | 88.41 dB | 108.115 dB |
Slew Rate | 3 V/u-sec | 3.2 V/u-sec |
PSRR | 78 dB | 117.51 dB |
Challenges Faced & Solutions
For this we went ahead and discovered some other tuning methodologies and thus we came across gm/Id technique.
So, for this we had to refer to a lot of tutorials that taught how to save all the DC operational values in a file and then use them to generate required plots with the help of scripts.
References
[1] F. Silveira, D. Flandre, P. Jespers, “A gm/ID based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA,” IEEE J. Solid-State Circuits, vol. 31, no. 9, Sept 1996, pp. 1314–1319
[2] H. Gupta, G. K. Mishra, N. Z. Rizvi, and S. K. Patnaik, “Design of high psrr folded cascode operational amplifier for ldo applications,” in 2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), 2016, pp. 4617–4621.
[3] S. L. Pinjare, G. Nithya, V. S. Nagaraja, and A. Sthuthi, “A gm/id based methodology for designing common source amplifier,” in 2018 2nd International Conference on Micro-Electronics and Telecommunication Engineering (ICMETE), 2018, pp. 304–307.