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A gm/Id based approach to design High Gain Folded Cascode Amplifier

Animesh Sharma (MT20317)

Shakti Shrey (MT20323)

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Contents:

  • Folded Cascode Circuit
  • Design Approach using Square-Law
  • Deviation around the Square Law
  • gm/Id Approach and models
  • Choice of gm/Id in design
  • Design using gm/id approach : Generic Design Flow
  • gm/Id Implementation on Folded Cascode Design.
  • Comparative Analysis of Results Achieved
  • Challenges faced & Solutions
  • References

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Design Specifications :

Technology

180 nm

Operating Voltage

1.8V

Gain

Greater than 70 dB

Unity Gain Band Width

10 MHz

Load Capacitance

5 pF

Slew Rate

5 V/u-sec

Power

Less than 200 uW

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Design Approach using Square-Law

Decide the Total current from Power constraint and supply voltage available

Budget current in every Branch

Allocating Vov across all transistors according to currents budgeted across them

�Apply square-Law to find aspect ratio across every Tx.�Ids= K(W/L)Vov2

Decide Vbias according to allocated Vov

Perform Simulations

Specifications met?

Design Complete

Change Vov using different W/L

No

Yes

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Subject Circuit : The Classical Square Law approach

  • It is composed of p-channel differential input pair (M1, M2), followed by common-gate stages (M7, M8) and current sources (M5, M6), and a self-biased cascode current mirror (M9 – M12) that inverts the current signal. M3 and M4 form a current mirror that provides bias current for differential input pair.

  • Iref =40uA�Ib = Ia + Iref/2�Ib > Iref/2 => Ia=10uA, Ib=30uA�
  • After this Vov distribution, and implying square law, to find bias voltages�
  • Vb1 = 860 mV and Vb2= 620mV, (taking Vtn=470mV & Vtp=450mV)

> Single stage Folded Cascode Op-Amp

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Transistor’s Name

Aspect Ratio (W/L)

M1, M2

35u/1u

M3,M4

10u/1u

M5,M6

16u/4u

M7,M8

6u/5u

M9,M10

32u/1u

M11,M12

12u/1u

Arrived Design Sizings using Square law

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Results Achieved using Square Law :

Gain = 73 dB Phase Margin = 57 deg UGB = 8.64 MHz

PSRR = 78.067 dB

Ad = 73.55 dB Acm = -14.86 dB CMRR = Ad - Acm = 88.41 dB

Slew Rate = 3V/usec

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Deviation around the Classical Square Law!

  • The actual current does not drops to zero for Vgs < Vt.
  • The Square law does not take into account of Vt variation with respect to Vds or L.

Thus, it is a challenging task to fix V(ON) = Vgs - Vt.

  • The Square law fails miserably at predicting gm/Id in moderate & Weak Inversion regions.

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Classical Square Law Vs. Simulation Models Approach

  • Since there is a disconnect between actual transistor behavior and the simple square law model, the Square-law driven design optimization will be far off from actual Simulator results.
  • Strategy – Design using look-up tables or charts.

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Motivation of gm/Id : We must pay IQ to buy gm

  • gm/Id is measure of the efficiency to translate Current (i.e. power) into gm (gain).
  • Higher gm/Id translates to better gain and better Power efficiency.

  • gm/Id is strongly related to the performance of analog circuits.
  • It also gives an indication of the device operating region.
  • It can be used for transistor sizing.

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Characterisation of gm/Id : nMOS

  • Obtain models through a DC sweep simulation of the transistor models.
  • Tabulate the figures of merit considering gm/ID as an index, over a reasonable range of gm/Id --
  • Transit frequency (fT)
  • Intrinsic gain (gm/gds)
  • Repeat the sweep for different lengths --- 180nm, 200 nm, …..
  • In order to compute device widths, we need one more table that links gm/ID and current density ID/W.

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Effect of gm/Id : Region of Operation

Plot-1: gm/Id Vs. V-ov

Plot-2: gm/gds Vs. gm/Id

Plot-3: fT Vs. gm/Id

Plot-4: fT*(gm/gds) Vs. gm/Id

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Id/W Vs gm/Id across different L: Sizing of devices

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gm/Id Characterisation : pMOS

Plot-1: gm/Id Vs. V-ov Plot-2: gm/gds Vs. gm/Id

Plot-3: fT Vs. gm/Id Plot-4: fT*(gm/gds) Vs. gm/Id

gm/Id vs Id/W : Operating region

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Choice of gm/Id in the Design

Smaller gm/Id

Moderate gm/Id

Large gm/Id

Strong Inversion Biasing

Moderate Inversion Biasing

Weak Inversion Biasing

  • Small gm (for given Id)

Devices whose gm do-not contribute to gain.

  • High Speed

  • High Current Carrying Capacity (Current Sources)
  • Interestingly, the product of gm/gds and fT peaks in moderate inversion, and thus, operating the transistor in moderate inversion makes sense when we value speed and power efficiency equally.
  • High gm (for given Id)

Devices whose gm do contribute towards gain.

  • High Power Efficiency

Low Power consumption (Low Id) for given specifications.

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Design Flow : Sizing using gm/Id technique

  • We started with determining Drain Currents across each transistors by budgeting total current in our design.
  • We intelligently choose gm/Id of all transistors based on their effect on our circuit.
  • Based on the variation of obtained models from Virtuoso of Normalised Current (Id/(W/L)) Vs gm/Id, we determine the Normalised current values across all devices.
  • Thus, we get the aspect ratio (W/L) of all devices.
  • Choice of L :-
  • Short Channel : High Speed (High fT)
  • Long Channel : High Intrinsic gain

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gm/Id Implementation on Folded Cascode Design

Transistor’s Name

Aspect Ratio (W/L)

gm/Id

M1, M2

50u/1u

14

M3,M4

6u/1u

3.5

M5,M6

16u/4u

9.5

M7,M8

32u/3.5u

18

M9,M10

50u/1u

18

M11,M12

30u/5u

9.5

Devices

Inversion Region

M7-M10

Weak

M3-M6,�M11-M12

Strong

M1-M2

Moderate

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Results Achieved using gm/Id:

Gain = 91dB Phase Margin = 66 deg UGB = 9.1 MHz

PSRR = 117.51 dB

Ad = 91 dB Acm = -14.86 dB CMRR = Ad - Acm = 108.115 dB

Slew Rate = 3.2 V/usec

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Comparative Analysis of Results Achieved!

Parameters

Designed wrt Square-Law

Designed wrt gm/Id

Technology

180 nm

180 nm

Operating Voltage

1.8V

1.8V

Gain

73 dB

91 dB

Phase Margin

57 degree

66 degree

Unity Gain Band Width

8.6 MHz

9.1 MHz

CMRR

88.41 dB

108.115 dB

Slew Rate

3 V/u-sec

3.2 V/u-sec

PSRR

78 dB

117.51 dB

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Challenges Faced & Solutions

  • Faced difficulty while arriving at an optimized design even after several iterations.

For this we went ahead and discovered some other tuning methodologies and thus we came across gm/Id technique.

  • Plotting transistor characteristic graphs w.r.t gm/Id was challenging as virtuoso tool does not inertly allow plotting graphs with derived quantities.

So, for this we had to refer to a lot of tutorials that taught how to save all the DC operational values in a file and then use them to generate required plots with the help of scripts.

  • Learning Ocean scripting was challenging as it was something very new for us and we had to devote a lot of time to be able to get the desired plots.

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References

[1] F. Silveira, D. Flandre, P. Jespers, “A gm/ID based methodology for the design of CMOS analog circuits and its application to the synthesis of a silicon-on-insulator micropower OTA,” IEEE J. Solid-State Circuits, vol. 31, no. 9, Sept 1996, pp. 1314–1319

[2] H. Gupta, G. K. Mishra, N. Z. Rizvi, and S. K. Patnaik, “Design of high psrr folded cascode operational amplifier for ldo applications,” in 2016 International Conference on Electrical, Electronics, and Optimization Techniques (ICEEOT), 2016, pp. 4617–4621.

[3] S. L. Pinjare, G. Nithya, V. S. Nagaraja, and A. Sthuthi, “A gm/id based methodology for designing common source amplifier,” in 2018 2nd International Conference on Micro-Electronics and Telecommunication Engineering (ICMETE), 2018, pp. 304–307.