Electroless Ni Plating
To replace Al evaporation
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Metalization
Metal thin films on chip surface
Forms electrical connections and wires
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Electroless Plating vs Thermal Evaporation
Electroless Plating:
Al Evaporation:
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Nickelex & Electroless Plating
Similar to electroplating, but driven by reaction:
Ni2+(complex) + H2 = Ni (s) + 2H+
H2PO2– + H2O = H2OPO3– + H2
Reaction is very sensitive to the surface
Faster on conducting surfaces
Temperature range: 90-98°C
Deposition rate: 40 nm/min at ~90°C
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Sintering & Oxidation
Sintering:
Oxidation:
Before: 60 nm, 59 Ω
After: 120 nm, 135 Ω
Before
After
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Selective Plating & Ni-Si interface
Selective plating can pattern chips (8.5 μm)
Measure the resistance of Ni-Si interface
Intercept - Contact Resistance Slope - Sheet Resistance/Width
Ohmic Contact
Ni
Glass - 700B
Ni
700B
Si
Doped Si
| Contact (Ω*cm2) | Sheet (Ω/sq) |
Ni-Si | 12*10-4 | 1.87 |
Al-Si | 7.3*10-4 | 43.1 |
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Sensitization & AuCl3
AuCl3 acts as a catalyst for the plating
✅Plating on SOG and photoresist
❌Plating too fast:
❌Overall inconsistent thickness:
❔Impact on electrical properties
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Selectively plated transistor
Selectively plate Ni into contact holes of transistor
Transistor behavior with low gate leakage
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Reliability and next steps
Ni plating was not consistent enough
Future Work:
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Questions
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Nickel Etchant TFG
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Nickel Etching
✅Ni was etched
❌Much slower than expect
❌Etching of photoresist
❌ AuCl slows etching
❔Glass hard mask
30 sec
10 min
2 min
30+ min
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