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European Fusion Teacher Day 2025

From plasma to spintronics: a journey through thin films

Yelyzaveta Mala

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Agenda

  1. My path from plasma to spintronics (from studies in Ukraine to PhD in Germany)
  2. Plasma-Spin-Energy German-Ukrainian Core of Excellence
  3. Plasma in science
  4. Thin film deposition
  5. Spintronics
  6. Characterizations
  7. Sputtering effect on thin films in spintronic
  8. Devices & industry

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Educational Background

  • 2006 - 2017 Secondary school №62, Kharkiv, Ukraine

  • V.N. Karazin Kharkiv National University:

2017 - 2021 Bachelor`s degree - applied physics and nanomaterials

2021 - 2022 Master’s degree - applied physics and nanomaterials

  • National Science Center KIPT, Institute of Plasma Physics

2021 - 2022 Experimental part for the Bachelor thesis:

“Optical emission spectroscopy methods for analysis of high-energy plasma streams density.”

  • Max Planck Institute of Microstructure Physics:

2022 3 months internship and experimental part for the Master thesis:

“Formation of spintronic structures by magnetron sputtering.”

2023 – 2025 Research assistant in Samsung project

2025 – present PhD student at the NISE department of the Max Planck Institute as part of the German-

Ukrainian Core of Excellence “Plasma-Spin-Energy”

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Plasma-Spin-Energy

German-Ukrainian Core of Excellence

The main goal:

  • bring together novel spintronics and plasma technologies;
  • involving Ukrainian scientists from all over the world;
  • perform groundbreaking research.

Scientific partners:

  • Max Planck Institute of Microstructure Physics (MPI);
  • V.N. Karazin Kharkiv National University;
  • National Science Center Kharkiv Institute of Physics and Technology (NSC KIPT).

CoE one of the four best project concepts in Ukraine that were selected for funding from Federal Ministry of Education and Research (BMBF) with 2.5 million euros.

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Plasma-Spin-Energy

German-Ukrainian Core of Excellence

  • New equipment for the CoE team at Karazin University
  • Research visits of Ukrainian colleagues to MPI-MSP
  • CoE team at the “Frontiers of Racetrack Memory” workshop

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Plasma in science & technology

Applications:

  • Physics & Research: fusion, astrophysics, plasma diagnostics;
  • Industry: microelectronics, coating, thin film deposition
  • Medicine: sterilization, wound heating, cancer treatment
  • Everyday life: plasma TVs, fluorescent lamps, plasma cutting

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Deposition techniques

Technique

Schematic

Principle

Typical Use

CVD (Chemical Vapor Deposition)/

PECVD

Gas precursors -> reach heated substrate / plasma activates molecules -> react chemically -> film

Semiconductors, coatings

ALD (Atomic Layer Deposition)

Gas A injected -> reacts with surface -> one atomic layer -> purged -> Gas B injected -> second reaction (cycle repeats)

Ultra-thin coating

PVD (Physical Vapor Deposition)

Solid source -> heated or vaporized -> atoms travel -> condense on substrate -> film forms physically

Metals, oxides

Sputtering

(type of PVD)

Energetic ions from plasma -> bombard a target -> atoms ejected -> fly through gas -> deposit on substrate as thin film

Magnetic films, electronics, spintronics

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Magnetron sputtering

Sputtering

(type of PVD)

Energetic ions from plasma -> bombard a target -> atoms ejected -> fly through gas -> deposit on substrate as thin film

Magnetic films, electronics, spintronics

Advantages of magnetron sputtering:

  • Clean & contamination-free;
  • Excellent thickness & composition control;
  • Suitable for many materials (metals, oxides, multilayers);
  • Widely used in science and industry.

The magnetron enhances sputtering by using a magnetic field to confine electrons near the target, increasing ionization and sputter rate.

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Category

Type

Power source

DC

RF

Gas environment

Inert (Ar, Xe, Kr)

Target

Single

Multiple / Co-sputtering

Deposition system - MANGO

  • 3 ion sources
  • 12 targets
  • 12 magnetron source
  • 4 clusters
  • 36 different materials

General view of the MANGO installation

MPI of Microstructure Physics

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Why thin films matter?

  • Thin films are used in many modern technologies:

electronics, optics, coating, sensors, and energy systems.

  • Enable precise control of material properties at the nanoscale.
  • In spintronics, thin magnetic layers are essential for memory devices that controls by spin transport.
  • Magnetron sputtering provides the precision and quality needed to grow these complex multilayer systems for next-generation, energy-efficient memory and sensor devices.

esssolarpower

10.1038/s41598-019-48311-0

hardinoptical

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Spintronics

Spintronics (spin + electronics) is a field of condensed matter physics that uses both the charge and the spin of electrons to store and process information.

Every electrons has a spin (intrinsic form of angular momentum) that can be up or down and create spin-polarized current in magnetic thin films.

Spin up ↑

Spin down ↓

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Spintronic mechanisms and effects

Spintronic devices rely on multiple physical mechanisms like:

  • Spin Hall effect (SHE): charge current -> spin current;
  • Rashba effect: interface, spin splitting;
  • Spin transfer torque (STT): spin current exerts torque -> M switching;
  • Spin orbit torque (SOT): heavy metal -> spin current -> M switching;
  • Tunnel magnetoresistance: electrons tunnel through insulator;
  • Exchange coupling: magnetic layers -> spins align parallel or antiparallel through spacer.

All of them strongly depends on the materials choice, layer thickness, and deposition parameters.

R. Bläsing et al., Proceedings of the IEEE, 108, 1308 (2020)

FM TB FM

Spin Hall effect

Rashba effect

SOT in domain wall (DW) motion

Tunneling

Interlayer exchange coupling

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How we characterize thin films?

  • To understand how growth conditions affects film properties
  • To verify structure, composition, and interfaces

Structural / Morphological

Magnetic

Electrical / Transport

Chemical / Compositional

XRD -> crystal structure, texture

VSM -> hysteresis loops, magnetic moment

CIPT -> magnetoresistance (GMR/TMR)

XPS -> surface chemistry, oxidation states

XRR -> layer thickness, density, roughness

MOKE -> switching, Kerr rotation

4-probe -> sheet resistance, conductivity

RBS -> elemental composition, depth profiling

AFM -> surface morphology, roughness

Kerr microscope -> magnetic domains

PPMS -> magnetoresistance, Hall effect, temperature dependence

EDS / EDX -> elemental mapping in SEM/TEM

SEM -> surface structure, grain size

SQUID -> sensitive magnetic moment (low signal)

CIP / CPP -> spin transport

SIMS -> depth profiling, impurities

TEM / HRTEM -> crystal lattice, interfaces

FMR -> magnetic damping, resonance

Auger / AES -> surface composition (nm scale)

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Structural / morphological characterization

Reveals crystal structure, phase, and texture;

Determine thickness, roughness, and grain size;

Key methods: XRD (XRR), AFM, SEM, TEM / HRTEM;

Important for verifying multilayer quality and interfaces.

XRD equipment

XRR measurement

XRD spectra

AFM measurement

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Determines elemental composition, oxidation states and purity;

Confirms stoichiometry in compound films (oxides, or interdiffusion);

Tools: EDS, XPS, SIMS, RBS;

Crucial understanding spintronics stacks.

Chemical / composition characterization

Schematic of XPS setup

XPS measurements

EDS measurement

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Magnetic characterization

Measures magnetization, coercivity, anisotropy, domains…;

Tools: VSM, MOKE, Kerr Microscope, SQUID;

Reveals magnetic domain structure and switching behavior;

Directly linked to spintronic device performance.

J

↑↓ domain wall

VSM equipment

Kerr microscope measurements

VSM measurement

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Electrical characterization

Evaluates resistivity, magnetoresistance, and tunneling properties;

Techniques: CIPT, 4-point probe, PPMS, CIP/CPP;

Determines device efficiency (↑TMR)

Helps correlate structures and magnetism with spin transport

Bruker

Schematic diagram of CIPT

CIPT measurement

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Deposition parameters overview

Parameters

Mechanism

Power (DC/RF)

Controls deposition rate and energy of atoms -> density and structure

Pressure

Affects mean free path -> influences roughness, grain size, and stress

Gas composition

Determines film composition (metallic / oxide / nitride)

Substrate temperature

Controls crystallinity, diffusion, and interface quality

In-situ annealing

Control heating after or during deposition for reduce defects, enhanced crystallinity, modify anisotropy and coupling

Target-substrate dist.

Influences uniformity and deposition rate

Deposition time & rate

Determines thickness of the film

Film structure, interface quality, and all film properties are governed by deposition parameters

Control via power, pressure, gas composition, temperature, etc.

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Deposition power (DC/RF)

  • Direct current (DC) for metals, radiofrequency (RF) for oxides and nitrides;
  • Higher power -> higher plasma density and plasma flux;
  • Affects film growth rate, crystallinity, density, morphology.

Anas A. Ahmed et al., AIP Conf. Proc. 2068, 020076 (2019)

S. Elmassi, et al., Physica B: Condensed Matter, 659, (2023) 414853

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Pressure

  • Defines mean free path of ions and sputtered atoms;
  • Low pressure -> high energy, fewer collisions ->

dense films (but can damage previous layer);

  • High pressure -> more scattering -> porous structure;
  • Influences plasma stability and deposition rate.

3 mTorr

12 mTorr

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Gas composition

 

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Temperature

In-situ annealing / post annealing

  • Higher temperature -> improve crystallinity, magnetic coupling or start interdiffusion;
  • Affects adhesion, anisotropy, and interface quality (Interfaces are important!);
  • Promotes atomic rearrangement and defect reduction.

O1s

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Devices & industrial relevance

When the film has a good quality -> make devices -> cleanroom (lithography,…)

These spintronic devices commonly used in IBM, SAMSUNG, Intel,

Dieny, B., et al. Nat Electron 3, 446–459 (2020).

STUART S. P. PARKIN, ET AL., Science 320, 5873 pp. 190-194 (2008)

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Thank you for your attention!

Questions