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Bangladesh University of Engineering & Technology

Department of Electrical and Electronic Engineering

EEE 400

AlGaN/GaN Based Multi-Metal Gated High Electron Mobility Transistor with Improved Linearity

1

Thesis Committee

  1. Dr. Md. Kawsar Alam

Professor, Dept. of EEE, BUET

  1. Dr. Orchi Hassan

Assistant Professor, Dept. of EEE, BUET

Presented By

Toiyob Hossain (1706013)

Md. Tasnim Azad (1706139)

Supervisor

Dr. Nadim Chowdhury

Assistant Professor, Dept. of EEE, BUET

May 17th , 2023

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Efficiency issue in 5G Telecommunication

Vision of 5G telecommunication

High data rate

(peak 10/20 Gbps)

GaN demonstrates

Superior performance

Power amplifiers plays a dominant role in linearity and efficiency of the transmitter

RF Front

End Module

Efficiency

~10%

4G

~ 35-45%

Toiyob Hossain, Md. Tasnim Azad

Confidential & Unpublished. Please don’t distribute

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PA Trend and GaN as PA Material

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Toiyob Hossain, Md. Tasnim Azad

 

 

 

[1] Hua Wang, et. al ."Power Amplifiers Performance Survey 2000-Present," [Online]

 

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Linearity-Efficiency Trade off in GaN

Toiyob Hossain, Md. Tasnim Azad

 

 

 

 

 

 

 

 

 

 

 

(1)

(2)

(3)

(4)

 

[2]

[2] Joglekar, Sameer, et al. 2017 IEEE IEDM, 2017

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MTL, MIT [2]

Toiyob Hossain, Md. Tasnim Azad

Literature Review

​

 

 

Xidian University[3]

Implanting region [ Fluoride ions ]

Non -Implanting region

 

[2] Joglekar, Sameer, et al. 2017 IEEE IEDM, 2017

[3] Zhang, Fang, et al. IEEE EDL 43.11 (2022): 1838-1841.

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Objective

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Toiyob Hossain, Md. Tasnim Azad

Novel Architecture

[1]

Device To Circuit Level Analysis

[2]

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Outline

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Toiyob Hossain, Md. Tasnim Azad

TCAD Simulation

 

 

 

[Keysight ADS]

[Keysight ADS]

[Silvaco]

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Toiyob Hossain, Md. Tasnim Azad

VGS = -3 V to 3 V

Step = 1V

VDS

= 6 V

TCAD Simulation

​

​

MODEL PARAMETERS

Value

​

0.5

​

1900

Polar Charge Scale Factor

0.75

​

​

Beta

1.25

 

 

 

 

200 nm

10 nm

 

 

[4] Zhang, Yichuan, et al. IEEE EDL 39.5 (2018): 727-730.

[4]

[4]

Confidential & Unpublished. Please don’t distribute

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TCAD Simulation

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Toiyob Hossain, Md. Tasnim Azad

WF

VDS = 28 V

​

VGS = 2 V

​

WF

 

 

Confidential & Unpublished. Please don’t distribute

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Toiyob Hossain, Md. Tasnim Azad

VDS = 28 V

​

Ta

Ti

Cr

W

Ag

Ru

Ni

Au

Ir

Pt

WF

TCAD Simulation

​

​

 

 

Confidential & Unpublished. Please don’t distribute

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Toiyob Hossain, Md Tasnim Azad

 

[5] Martinez, R.P. IEEE TED, 70(5), pp.2247-2254.

 

[5]

Width

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Toiyob Hossain, Md Tasnim Azad

 

Minimization Window

-2 V to -1.4 V

 

 

 

 

Minimization Window

-1.4 V to -1.0 V

 

Confidential & Unpublished. Please don’t distribute

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Toiyob Hossain, Md Tasnim Azad

 

 

 

 

Confidential & Unpublished. Please don’t distribute

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VDS = 28 V

​

Slower turn-on of MMG HEMT

​

 

 

Confidential & Unpublished. Please don’t distribute

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Toiyob Hossain, Md Tasnim Azad

 

3x Reduction

​

 

 

Gate Metal

Width(%)

W

10.53

Ag

5.26

Ni

42.11

Au

10.53

Ir

15.79

Pt

15.79

Confidential & Unpublished. Please don’t distribute

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Toiyob Hossain, Md Tasnim Azad

Compact Modeling

VGS = -3 V to 3 V

MMG HEMT

​

Step = 1V

Used Model

MIT Virtual Source GaN-HEMT (MVSG) [6]

[6] Radhakrishna, et.al., TED (pp. 95-105). IEEE.

Confidential & Unpublished. Please don’t distribute

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Toiyob Hossain, Md Tasnim Azad

Large Signal Performance Assessment

Small Signal Simulation

Accounts for behavior which is linear around an operating point

Input Signals are significant enough to cause non-linear behavior

Accounts for the effects of

Distortion

Saturation

& Other nonlinear phenomena

Large Signal Simulation

{

{

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Toiyob Hossain, Md Tasnim Azad

Large Signal Performance Assessment

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

After filtering

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Toiyob Hossain, Md Tasnim Azad

Large Signal Performance Assessment

65%

 

 

 

 

 

 

Confidential & Unpublished. Please don’t distribute

 

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Large Signal Performance Assessment

}

6.26 dB

6.2

dB

Confidential & Unpublished. Please don’t distribute

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Toiyob Hossain, Md Tasnim Azad

Large Signal Performance Assessment

}

12.9 dB

Better IMD3

Over the range

Confidential & Unpublished. Please don’t distribute

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Large Signal Performance Assessment

Toiyob Hossain, Md. Tasnim Azad

Parameter

Planar HEMT

MMG HEMT

Max. PAE [%]

63.55

65.00

​

7.00

6.91

​

0.591

1.81

​

7.40

13.66

IMD3 [dBc]

-32.8

-45.7

Confidential & Unpublished. Please don’t distribute

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Conclusion

​

Toiyob Hossain, Md. Tasnim Azad

6.2

dB

3x

Reduction

​

Device Simulation

Circuit Level

Assessement

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Acknowledgement

​

Toiyob Hossain, Md. Tasnim Azad

Dr. Nadim Chowdhury

Assistant Professor

Department of EEE, BUET

DEPARTMENT OF

ELECTRICAL &

ELECTRONIC

ENGINEERING

BANGLADESH

UNIVERSITY OF�ENGINEERING &

TECHNOLOGY

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Q & A

Session

Toiyob Hossain, Md. Tasnim Azad

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Supplementary Slides

Toiyob Hossain, Md. Tasnim Azad

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OBO [dB]

IMD3 [dBc]

OBO [dB]

PAE [%]

Large Signal Performance Assessment

Lower OBO required in MMG HEMT for particular linearity

For same linearity requirement, MMG HEMT can operate at 6dB OBO (~30% PAE) while Planar HEMT has to operate at >10 dB OBO (>15% PAE)

Toiyob Hossain, Md. Tasnim Azad

Confidential & Unpublished. Please don’t distribute

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Large Signal Performance Assessment

40%

15%

At IMD3 of 30 dBc

Slower decrease in PAE

IMD3 [dBc]

PAE [%]

Toiyob Hossain, Md. Tasnim Azad

Confidential & Unpublished. Please don’t distribute

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Linearity-Efficiency Trade off in 5G

Toiyob Hossain, Md. Tasnim Azad

Higher order modulation technique required (e.g, 256 QAM)

Poor PA linearity results in signal distortion

Best Efficiency

Backoff Required

For higher PAPR

 

 

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Linearity Issue of GaN HEMT

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Toiyob Hossain, Md. Tasnim Azad

[2] Pedro, et.al., EuMC (pp. 1297-1300). IEEE.

[2]

Soft Compression in GaN

[3]

 

[3] Martinez et.al, IEEE TED, 70(5), pp.2247-2254.

 

Gain [dB]

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~ 20 dB lower IMD

 

~ 8 dB delayed onset

Literature Review

​

[4] Joglekar, Sameer, et al. 2017 IEEE IEDM, 2017

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Selective Area Charge Implantation

Implanting region

Non -Implanting region

Larger Gate voltage swing

 

Literature Review

​

[5] Zhang, Fang, et al. IEEE 43.11 (2022): 1838-1841.

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Literature Review

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Toiyob Hossain, Md. Tasnim Azad

Reduction in Gm derivatives

 

Two tone measurement

[5] Zhang, Fang, et al. IEEE 43.11 (2022): 1838-1841.

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Linear to Saturation transition parameter (betard,betars)

 

Subthreshold Slope

(S)

 

 

 

 

Toiyob Hossain, Md. Tasnim Azad

Confidential & Unpublished. Please don’t distribute

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Linear to Saturation

Transition parameter

(betrard)

Drain Induced Barrier

Lowering (delta1)

 

Linear to saturation transition parameter

(betars)

Toiyob Hossain, Md. Tasnim Azad

Confidential & Unpublished. Please don’t distribute

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Compact Modeling

MVSG Model Parameters

MMG HEMT

​

​

​

​

​

​

​

​

​

​

​

​

​

​

​

-1.0 V

​

​

​

0.80

​

0.74

​

0

Toiyob Hossain, Md. Tasnim Azad

Confidential & Unpublished. Please don’t distribute

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Conclusion

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  • Single tone

 

 

 

 

IMD3 is 12.9 dB lower than the baseline device

  • Two tone

These results highlight the improvement in linearity

Toiyob Hossain, Md. Tasnim Azad

Confidential & Unpublished. Please don’t distribute

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Future Work

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​

Toiyob Hossain, Md. Tasnim Azad

Gate Leakage Current Consideration

[1]

ACPR, EVM Evaluation

[2]

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Large Signal Performance Assessment

Parameter

Planar HEMT

MMG HEMT

​

​

100

​

​

28

​

​

-1.12

​

​

73

Linear Gain [dB]

9.75

9.56

Max. PAE [%]

63.55

65.00

​

7.00

6.91

​

0.591

1.81

​

7.40

13.66

IMD3 [dBc]

-32.8

-45.7

Toiyob Hossain, Md. Tasnim Azad

Confidential & Unpublished. Please don’t distribute