Flexible Photovoltaic Devices
ENMA466 - Testing Geometry Efficiency
Joseph Ayoub
Sabrina Curtis
Julia Downing
Maria Pascale
Alex Randolph�Haotian Wang
Outline
**Purple = new content. Note: Previously presented slides at the end of the presentation
Question / Goal
End Goal: Develop a flexible/ stretchable photovoltaic device
Future Work - Capstone Goal:
Release device from wafer onto a flexible substrate (i.e sillicone) and test device performance while strained (0%, 50%, 100%)
Micro: Develop and characterize multiple unstretched photovoltaic devices of different geometries. Determine the influence of geometry on device performance.
Controls:
Straight line control for each variable, thickness
Variable: Shape of Device (geometric pattern), amplitude, wavelength,and periodicity
Division of Labor
Fabrication and Characterization - All
Leads - Maria, Joe, Sabrina
Masks and CAD - Sabrina, Julia
FEM: ANSYS- Julia, Alex COMSOL - Haotian, Sabrina
Scheduling / Gantt - Maria
Process Flow - All
Power/Efficiency Calculations - Haotian, Julia helping
Geometry (Top View)
Expectation: Geometries with a more gradual change in direction (sine, horseshoe, curved corner rectangle) will perform better mechanically and electrically.
Straight Line
Rectangular
Curved Corner Rectangular
Horseshoe
Dimensions: Addition and Modification of Si Island
150 um
150 um
25 um
Si = 110 um
N = 40 um
ITO = 15 um
P = 40 um
125 um
150 um
185 um
Updated Fab Process as of 11/1/16
Current step
Fabrication Updates
ITO contact
Doped region
Upcoming Process Steps
Modeling - COMSOL and FEM
Goal:
Model:
Boundary conditions:
Comsol simulation analysis
Comsol simulation analysis:
Cycle of geometry
Comsol mechanical simulation analysis:
Thickness of elastomer substrate
Comsol mechanical simulation analysis:
Strength of elastomer material
Comsol simulation analysis
Geometry
Comsol mechanical simulation analysis
Conclusion:
For the curved corner structure:
For the rectangle structure:
ANSYS Simulation
Only a partial mesh is currently attainable - boundary geometries are too small to mesh in ANSYS for the whole device
ANSYS Simulation Results: Horseshoe Si trace on Kapton tape
Von Mises stresses: maximum 0.57 x 1010 Pa or 5.7 GPa
ANSYS Simulation Results: Horseshoe Si trace on Kapton tape
Si material model: S (compliance)in units of 10-11 Pa
Power and Efficiency Calculations
Bottom-up approach:
Power and Efficiency Calculations
Top-Down Approach:
Work Needed in the Near Future
Potential Characterization Methods (lots)
Abbreviated Schedule
DEADLINE | MILESTONE |
10/12 | SOI and spin on dopant ordered |
Actual 10/14 | Order Masks - almost done! |
10/17 | Need SOI wafer delivered for SiO2 growth |
10/19 Fab start 10/24 | Commence team lab operations + Present |
11/11 | Device fabrication and modeling component completed |
11/14-11/18 | Device characterization |
11/30 | Presentation |
Old Slides
Motivation
Kim, Dae-Hyeong, et al. "Epidermal electronics." science 333.6044 (2011): 838-843.
Mask as of 10-18-16
Zoomed in cross section
Arrived from Output City (**Scale issue - 3 mm instead of 4 mm)
Fabrication Process
Thin film solar cell: Vertical Process with N or P type�So wafer
Lateral PN Junction: Lateral Process with Silicon-on-insulator
Minor mask issue - resolved
Discontinuity in ITO trace → no current
Can add polygon “bridges” around gap
P-N Junction Orientation
P-type
N-type
Gantt Chart
Created by Maria Pascale
.gan file uploaded on the Google Drive folder
Initial Fab Process as of 9/28
Efficiency Considerations
Comment on Yonggang’s comments (in the email thread) here
Updated Fab Process as of 10/10
Further Readings