EE6361-Advanced Topics in VLSI Class Quiz
Gated Feedback Sense Amplifier
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Q1. The problem with the 3T micro sense family is that
It is slow to sense a ZERO
It cannot accommodate more than 33 cells per LBL
it consumes too much dynamic and leakage power
It is too slow to sense a ONE
Q2. If the cell capacitance is 20fF and the drain capacitance of the access device is 250 aF. The ratio of read times of a system with 32 BLs and that with 128 BLs is
Your answer
Q3. In SOI technology based eDRAM, you should pre-discharge the LBL to GND because of
Floating body effect induced retention time reduction
GIDL induced retention time reduction
Write time degradation
Read time degradation
Q4. The logic one voltage level of BLMUX in a Gated Feedback Sense Amp (GSA) should be
VDD
VPP
At least VDD + VT
At most VPP - VT
Q5. In the above the VT type of the BLMUX NMOS should be
HVT
LVT
Either
Thick oxide
Q6. SETPn and SETP are respectively used in a GSA to
Prevent early feedback and reduce leakage
Reduce leakage and prevent early feedback
Reduce leakage
Prevent early feedback
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