Applied Materials Precision 5000 Etcher, p5000etch

The Applied Materials Precision 5000 Etcher is a "cluster" tool, consisting of four, independently-controlled etch chamber modules which surround a central loadlock. Chambers A, B, and C are Magnetically-Enhanced Reactive Ion Etch (MERIE) systems, each equipped with optical endpoint detection to allow for more customized etching. The chamber configuration and system software allow control over a wide range of process parameters.

Picture and Location

Background

Description

Wafer Size

Etcher Configuration

Chambers

Wafer Clamping

Chemistry

How to get trained on the P5000etch

Training

Operating Procedures

Badger Enabling

Button Definitions

Standby Condition

System Inspection and Operation

Select Endpoint Detection

Loading and Etching of Wafers

To stop loading any additional wafers into the etch chamber (the front panel STOP button):

To stop recipe step before endpoint or pre-programed time is finished:

Recover from Stop Procedure

Wafer Unload

Shutdown

Quick Start Instructions

Processing Information

Typical Etch Rates by Chamber for Standard programs

Endpoint Detection

Theory of Operation

Recommended Wavelengths for Monitoring Endpoint

Process Gases and Maximum Flows by Chamber

Chamber A- Metal

Chamber B- Oxide

Chamber C- Silicon

Chamber C (poly Si) Clean Procedures

Selected Recipes by Chamber

Chamber A

Chamber B

Chamber C

Process Monitoring and Qualification Procedure

Purpose

Frequency of the Test

Documentation of Results

Historic Chamber Qualification Data

Chamber A (metal)

Chamber B (oxide)

Chamber C (Poly, Si)

Procedure

Recent Monitor results

Picture and Location

Background

Description

Plasma Etcher for semi-clean (not contaminated) metals (Al, W, Ti), silicon dioxide, silicon nitride and polysilicon.

Wafer Size

4 inch wafers only.  Although pieces can be attached to 4 inch carrier wafers it is not recommended.

Etcher Configuration

Chambers

Three separate chambers for etching;

  1. The wafers are placed on an RF (13.56 MHz) powered electrode.
  2. The electrodes areas are asymmetric with the wafer electrode being smaller than the grounded counter electrode. This asymmetry means that a large dc bias voltage will develop on the wafer electrode and will result in high energy (100 to 600 eV) ion bombardment of the wafer surface.
  3. A magnetic B field (30 to 100 gauss) in applied parallel to the wafer surface. This B field increases the plasma density and rate of ion bombardment which both increase the rate and directionality of the etching. The B field is created by using two sets of orthagonal Helmholtz coils mounted on the outside of each of the three chambers. By using low frequency AC current supplies and controlling the phasing to the two sets of coils, a rotating B field is achieved.

Wafer Clamping

Unlike older etch systems where the wafer just sits on the electrode, chambers A, B and C use mechanical wafer clamping to increase wafer cooling. By using a combination of an edge wafer clamp and a vacuum edge seal, the space between the wafer backside and the electrode can be filled with low pressure (4 to 8 torr) helium which acts as a heat conductor. The result is that the wafer temperature stays close to the electrode temperature independent of applied rf power. This is important for process control since many aspects of plasma etching, such as profile shape, are temperature dependent.  Because the wafer clamp uses several very small "fingers" to press the outer rim of the wafer down onto the seal, it is essential to keep these fingertips clean to prevent cross-contamination which may adversely affect wafers or interfere with wafer handling in the system. Edge bead removal is recommended, although not required.

NOTE: There have been issues of wafers sticking to the clamp at the de-clamping step (after etching) Several solutions have been suggested; increasing the EBR from 2mm to 5mm and holding the PUMP OUT Step to 120sec for chambers B and C.  Clamp sticking is not a issue in chamber A, as the clamp material is different.

Chemistry

How to get trained on the P5000etch

 Training

We do not have a staff member assigned to training on it at this time.  What we suggest is that labmembers wanting training on the tool contact a trained research group co-worker or other trained labmember for training and/or shadowing.  Once the 'trainee' is comfortable in the use of the tool they contact the responsible Process Staff member for badger qualification.  This is done with the understanding that the newly trained labmember may be approached for training eventually.

If you cannot find someone to train you after looking at history in badger please contact the responsible Process Staff member and a trainer will be identified.

The labmember is responsible for having read and understood any and all documentation related to the tool. A Training Check List is included in these Operating Instructions. It can be a good tool to make sure everything has been covered in the shadowing session.

Please print and fill out this Shadowing Form. After the session give the form to the responsible staff member for qualification.

Operating Procedures

 This machine is capable of a very wide range of process parameters and wafer movement sequences. Some screens, and the parameters available on them, if used improperly, can cause loss of calibration, robot errors, file corruption, and many other problems, not t to mention the loss or breakage of your valuable samples.  Users are to use only the screens, operating instructions, and procedures described in this document, or as instructed by responsible staff.  If you are not absolutely sure of what you are doing, don't do it. 

Badger Enabling

If the system is not enabled, an error will occur when the system tries to vent the loadlock, and no wafers can be loaded or unloaded. The Badger name to enable is "p5000etch".

Button Definitions

There are five buttons located to the right of the loading door. They perform the following functions:

Standby Condition

The standby condition is the condition that you should both find the etcher in when you want to enable it and the condition you leave it in when you are done. Please use the Coral equipment reporting option to report any discrepancies you find.

System Inspection and Operation

The following is a brief checklist to ensure machine is functional. The list is also the start of the operating procedures. Go through it every time you use the etcher.

  1. Is machine and process chamber(s) available for process? Check Coral (don't foget to look at Comments) and check to see there are no notes around the load station.
  2. Logon to p5000etch using light pen. Login/password = USER/USER.
  3. Enable ‘p5000etch’ using Coral.
  4. screen: Service => Vacuum Service
  5. Verify that the chambers which will be used are "ONLINE for Process". Chambers which are "OFFLINE for Maintenance" cannot be used because of failure, or maintenance in-progress.
  6. screen: Chamber X => Monitor Chamber
  7. Verify that Turbo indicator = ON.
  8. Are there any current system Errors or Faults? If needed, ask for maintenance assistance.
  9. screen: Program => Process Programs
  10. This will give you a list of the available recipes. Choose the desired recipes and verify parameters are correct, or change existing parameters.  A copy of the recipe should be in the chamber's book or, if you are using a non-standard recipe, you should have a copy of the etch parameters.  Please understand that anyone can change any parameter.  Any changes made are written to the recipe on the hard disk, so be sure to verify the recipe parameters, everytime you load the recipe. Do not expect the previous user to leave recipe parameters at default values.
  11. Paper copies of the programs are located in the logbooks at the p5000etch. They are organized according to the chamber used. The system has soft and hard ranges of parameters; soft ranges will give a message similar to ‘caution-may cause arcing’, but still accept the parameter change. Hard ranges will not allow the programming of that value, by giving an out of range message. Below is a list of parameters which may be changed or programmed:
  1. Fill out a run sheet in the log book and note any change you have made from the default recipe parameters.  NOTE: if you change any parameters on standard recipes (those in the chamber A, B or C book) make sure that you change them back.  Due to an error message that the system is presently giving no new programs may be written.  Changing parameters back is extremely important.
  2. screen: System => Control
  3. Verify or set System State = "MANUAL".
  4. Set Cassette A to "RELEASE".
  5. Select "OPEN DOOR".
  6. Remove the blue Cassette from the A side of the load station. Note: removing the Cassette insures that the system software will recognize any changes made to the Sequence.
  7. Serial Sequence selection: __________ (to choose, click on underline section and verify at the input line)
  8. Verify Serial Sequence specifies correct sequence. Sequence defines which chamber(s) the wafer transport will take the wafer to, and in what sequence (as in first to Ch. C,  then to Ch. B)
  9. Chamber Process Program selection: __________
  10. Verify correct recipe(s) are specified for required chambers. Recipe defines what process will be performed in the etch chamber(s). NOTE: the system will not stop you from putting the program in the wrong input line, for ex. loading recipe CH.B OXIDE in the A input line.  You will get an error message after the wafer is loaded into the chamber.  Also, if you do not put a program in the input line (i.e., leave it as a blank selection) the system will put the chamber into Off Line for Maintence mode.  Here is a correct example for the etching process above:
  11. A (Blank Selection)
  12. B CH.B OXIDE
  13. C CH.C POLY
  14. D (Blank Selection)
  1. If optical endpoint is required, load the appropriate endpoint program into the Endpoint PC, and prepare it for triggering before wafers are loaded and the process recipe is started. Note: If recipe specifies Endpoint, but the Endpoint PC is not prepared to trigger, the recipe will Fault when the first wafer is placed in the etch chamber.

Select Endpoint Detection

The Endpoint PC Stand-by condition is with the monitor power switch turned off. The switch is located on the front of the monitor.  The Endpoint PC CPU component is left powered ON.

To use endpoint detection:

Loading and Etching of Wafers

If these instructions do not allow the type of processing you feel is needed, ask for assistance

or clarification from appropriate staff. If screens or command fields are not described in this document – DO NOT use them.

  1. screen: System => Control
  2. Verify the System State is "MANUAL".
  3. Load wafers into cassette. Make sure that with the cassette loaded, all major flats are oriented towards the load lock. Failure to do this will not allow the wafer to seat on the chuck properly and result in damage to the chamber. Wafers start loading from the bottom (H-Bar side) of the cassette.
  4. Gently insert loaded cassette into the left hand cassette table (Table A) on the Load Station. Verify it is correctly positioned. It is subtle. Wafer must not be shaken out of position in the cassette slots.
  5. screen: Wafer => Monitor Wafer
  6. Select "Clamp A".
  7. Note: when cassette is clamped, the Sequence selection is highlighted in Green, and the Sequence can NOT be changed until Cassette is unclamped. Use the light pen to delete empty wafer positions on the cassette graphic on the lower left hand side of the screen. Choose the START DELETE RANGE at the first empty position and choose the FINISH DELETE RANGE at the last one. The graphic display will not show wafers if the cassette is not clamped.  NOTE: do not remove wafers on the display that are actually in the cassette.  You risk the handler crashing into them and breaking the wafers.  Wafers that show up on the graphic display that are not really in the cassette are less of a problem; the system will try to put the wafer on the handler and will move on to the next one if it fails.
  8. screen: System => Control
  9. Select "System State: Automatic".
  10. Note: Wafer header will change color to GREEN while robot is homed, then BLUE when robot is ready to run.
  11. Press the front panel Run button to start processing the wafers. Intermittent audible Alarm will sound & outer plastic door will close
  12. screen: Wafer => Monitor Wafer
  13. Monitor the wafer transfer operation from this screen.
  14. When the first wafer is placed in the etch chamber, go to        screen: Chamber X => Monitor Process
  15. Monitor recipe operation from this screen. You may now use the Previous Screen option at the lower right hand corner of the screen to toggle back and forth between the Wafer => Monitor Wafer and Chamber X => Monitor Process screens.
  16. Fill out the log sheets, particularly information about DC bias for the program steps and He cooling. You should have already filled out log sheets for any changes you have made to process or endpoint programs.
  17. When System header is blinking yellow, or when all process wafers have been returned to the A Cassette, the run is complete.

To stop loading any additional wafers into the etch chamber (the front panel STOP button):

The Stop Button located on the front panel, will stop the wafer movement. A wafer being moved into an etch chamber at the moment the Stop button is pressed will continue into the chamber, and the process recipe will be run on the wafer – then the system will HALT and wait for operator action. If a process recipe is running, the wafer in the etch chamber continues to be processed but at the end of the recipe the wafer stays in the chamber – then the system will HALT and wait for operator action. Avoid using the Stop button while the robot is moving wafers – it is preferred to use Stop when a wafer etch is in-progress; this will prevent loading the next wafer into the chamber. Operator must give instructions to either retrieve wafer or continue processing. See Recover from Stop Procedure.

To stop recipe step before endpoint or pre-programed time is finished:

screen: Chamber X => Monitor Process => Chamber Commands

Recover from Stop Procedure

If you get the error "Wafer did not drop on blade", DO NOT use this recovery procedure! Shutdown p5000etch on Coral. This procedure may be used to retrieve wafers that have been stopped during the processing. It must be performed in the following sequence:

After pressing Stop button on front panel:

  1. screen: Chamber Commands => End Current Recipe
  2. screen: System => Control
  3. Change "System State" to manual operation.
  4. screen: Wafer => Control Handler
  1. Abort load chamber operation.
  2. Abort current loader operation.
  3. Abort Automatic Sequencing.
  4. Home All Robot axes (wait about 2 min to complete).
  5. Return all wafers to cassette.

If all wafers are not successfully returned to cassette, and system faults & halts, DO NOT attempt to continue using the machine. Contact Nancy Latta. Use Badgerl to report problem (or shutdown if required). Include details of how many wafers are in the machine and where they are located (e.g. in cassette, loadlock, on robot blade, in chamber, etc.), what sequence and recipe was running, etc. On logbook run sheet, record as much information as possible about your wafer type, deposited & grown films, resist, thickness, etc. Put a note on front of the machine to alert others of situation.

 Wafer Unload

screen: System => Control System. Verify "System State: Automatic". Press front panel button "UNLOAD". Plastic door will open and Cassette will RELEASE. Unload cassette and reload with more wafers (orient flats toward loadlock) to continue etching, or go to Shutdown.

Shutdown

screen: System => Control System. Place empty cassette in A (left) side of Load Station. Select "System State: Manual". Select "Close Door". Turn Endpoint PC monitor power switch OFF. Disable p5000etch through Coral.  Logoff of p5000etch using light pen.

Quick Start Instructions

Processing Information

Typical Etch Rates by Chamber for Standard programs

The following information is provided to users of the Applied Materials Precision 5000 plasma etcher to aid in the use of the machine. This information is based on the programs Applied Materials originally provided.  Etch rates and selectivities should be considered guidelines and should be confirmed by the user by the use of test wafers.

Chamber A METAL (CH.A METAL)

Typical film stacks

Al/Si on Tox, LTO, Ti or WTi, AlSi on LTO on Al/Si

Sensitivity to process loading effects

High

Typical exposed film area

40% to 60%

Etch rates for usual films (Al/Si)

ME >6000A/min

OE >2000A/min

Selectivity for usual films

Al:PR >2:1

Al:Tox >6:1

Post etch treatment

Manual DI rinse- this is remove any residual Cl that may be on surface of the wafer.  Cl may corrode metals.

Endpoint specs (% exposed

film and endpoint recipe)

>40% su_al_lg.alg

<40% su_al_sm.alg

Chamber B OXIDE (CH.B OXIDE)

Typical film stacks

Tox on Si, LTO on Tox, LTO on AlSi,

Si3N4 on Tox, Si3N4 on Si

Sensitivity to process loading effects

Low

Typical exposed film area:

-for Via and Contact

-for Etchback and Spacer

 

<5%

~100%

Etch rates for usual films

ME >3000A/min

OE >3000A/min

Selectivity for usual films

Ox:PR >3:1

Ox:Si >7.5:1

Post etch treatment

30 sec O2 plasma before wet chemical resist strip.  This is to remove any polymer that has been deposited on the wafer.  It is due to the CHF3 chemistry used in etching and must be removed before additional processing.  See Polymer Removal.

Endpoint specs (% exposed film and endpoint recipe)

At least 2% required for endpoint

>20% su_ox_lg.alg

<20% su_ox_sm.alg

Chamber C SILICON and POLY (CH.C POLYETCH)

Typical film stacks

Poly on Tox, Si

Sensitivity to process loading effects

Low

Typical exposed film area:

-for Poly etch

-for Trench etch

 

40% to 60%

<10%

Etch rates for usual films

ME >3000A/min

OE >1500A/min

Selectivity for usual films

Poly:PR >3:1

Poly:Tox >10:1 (ME)

Poly:Tox >50:1 (OE)

Post etch treatment

10 sec 50:1 DI:HF dip

Endpoint specs (% exposed film and endpoint recipe)

-Poly with resist mask on Ox

-Si etch including trench etch

 

su_poly1.alg

?

 

Endpoint Detection

Theory of Operation

The optical endpoint system uses the phenomenon of spectral emissions to sense endpoint. As the wafer is being etched, a reaction equilibrium of the plasma is sustained until a film being etched starts to clear. At this point, the increase of etchant species, such as CF2 in the case of an oxide film, and the decrease of reaction product species, such as CO (in the oxide case) cause the light intensities associated with the species to increase and decrease, respectively. By measuring the light emission intensity change associated with the chemical species in the plasma, an endpoint time can be determined and the end etch control signal will be sent to the P5000.

Use of the spectral-emission phenomenon is dependent on the following conditions;

Recommended Wavelengths for Monitoring Endpoint

Etch Application

Film Type

Species

Wavelength

Contact & Spacer

Oxide over Si, poly, or silicide

CO

CF2

483.5nm

270 nm

Via

Oxide over metal

CO

CF2

438.5nm

270 nm

Stack

Oxide over nitride

CO

CN

438.5nm

386.5nm

Isolation

Nitride over oxide

CN

386.5nm

Patterned Poly

Poly over oxide

Cl, Br

Br

470.5nm

312.5nm

Patterned Wsi2

Wsi2 over poly or oxide

F

441.5nm

Patterned TiSi2

TiSi2 over poly or oxide

Cl, Br

470.5nm

Patterned MoSi2

MoSi2 over poly or oxide

Cl, Br

470.5nm

Patterned Al

Al-Si-Cu over barrier metal or oxide

Al

396 nm

 

Process Gases and Maximum Flows by Chamber

Chamber A- Metal

Position

Process Gas

Maximum Flow

7

CF4

100sccm

8

Cl2

100sccm

9

BCl3

100sccm

10

N2

100sccm

11

Ar

100 sccm

12

SF6

500sccm

  Chamber B- Oxide

Position

Process Gas

Maximum Flow

1

He

20sccm

2

CHF3

200sccm

3

CF4

200sccm

4

Ar

200sccm

5

O2

100sccm

6

N2

100sccm

Chamber C- Silicon

Position

Process Gas

Maximum Flow

R11

Cl2

100sccm

R12

HBr

100sccm

R13

NF3

200sccm

R14

CF4

100sccm

R15

SF6

100sccm

R16

He/O2

20sccm

 

Chamber C (poly Si) Clean Procedures

 

The following chamber cleaning procedures were recommended by AMAT for various conditions.

Clean to Minimize Grass

The following pre-conditioning process is useful for minimizing grass from micromasking when doing Si trench etching in the P5000 using an oxide mask and the HBr/NF3/O2 process in Chamber C.

  1. Run CH.C-CLEAN with bare Si wafer.
  2. Main: 90 NF3, 600mT, 350W, 55Gauss, 200 sec.
  3. Wafer should come out clear with no fog.
  4. Run 3 patterned seasoning wafers using trench etch process with 2 min main etch time. The oxide patterned wafers should have about the same pattern density as your real wafers. Although you may see some grass on the first wafer, the third should be mostly clean of grass in the etched areas. If grass is still a problem, the chamber most likely needs a wet clean. Note that this procedure was developed for wafers with 20 to 40% etched area.
  5. Etch wafers.

Chamber Clean to be run before the Trench Etch Process

It does not need to be run before each wafer.

Program:

Clean: 65 NF3, 15 He/O2, 50mT, 300w, 30Gauss, 200 sec

Clean: 65 NF3, 15 He/O2, 350mT, 300w, 30Gauss, 300 sec

Cool Down: 0 NF3, 15 He/O2, 150mT, 0w, 0 Gauss, 60 sec

Pre-Clean Procedures Before Venting Chamber C

Program 1) 10 to 515 sccm He/O2, 200-300 W, 100 mT, 74 Gauss, 10 min

Program 2) 40 sccm CF4, 40 sccm O2, 500 W, 500 mT, 50 Gauss, 5 min

Follow by 10 pump and vent cycles before venting.

Post Wet Clean – Chamber C

Pump chamber for minimum of 4 hrs.

Run dry clean on 2 bare wafers for 20 min each 100 sccm SF6, 18 He/O2, 350 mT, 400W

Season chamber with at least 15 wafers Seasoning of Chamber C below

Season 15 wafers with either a) alternative bare Si and PR coated wafers or b) bare Si wafers.

If idle for > 3 hrs, run 3 bare Si wafers.

If new chamber, run 100 wafers to season.

Seasoning of Chamber C  - to be done after chamber servicing

Wafers: Cassette of 25 wafers alternating resist/bare

Program:

BreakThru: 35 CF4, 30 mT, 260 w, 10 s

Main: 10 HBr, 30 Cl2, 100mT, 75 Gauss, 250 w, 60s

Overetch: 30 HBr, 15 Cl2, 6 He/O2, 100 mT, 75Gauss, 90w, 60s

Selected Recipes by Chamber

All given etch rates (ER) are approximate. Labmembers should use test wafers with the material to be etched to establish etch rates.

Chamber A

 

Chamber B

 

This is a list of active recipes. Only the Main Etch Step is listed as the Set Up Step would be the same and no Over Etch Step is used.

 

Recipe

Pressure

mT

Power

W

B Field

Gauss

CHF3

sccm

CF4

sccm

Ar

sccm

O2

sccm

Comments

Ch. B OXIDE

 250

 500

 60

 25

 50

 100

 0

 Std Ox etch

Ch. B BOSCH OXIDE

 250

 500

 50

 36

 18

 120

 0

 Hi PR Sel, nonvertical sidewall

Ch. B BOSCH

 250

 500

 60

 30

 15

 100

 0

 Hi PR Sel, nonvertical sidewall

Ch. B Jim-Ox

 250

 500

 60

 15

 30

 100

 0

Lo PR Sel, vertical sidewall

Ch. B INTOX

 250

 500

 60

 45

 15

 100

 0

 Thick Ox

Ch.B JIM-NIT

 200

 400

 30

 75

 15

 125

 0

 Nit ER = 400A/min

Ch. B NIT-SPACER

 30

 50

 0

 22

 15

 90

 4

 Nit ER = 340A/min, Ox ER = 140A/min

Ch. B SURROMED

(Original)

 10

 50

 30

 75

 25

 25

 0

 He cooling = 5T, PR ER = 300A/miin

Ch. B SURROMED

(Modified)

 40

 50

 40

 0

 0

 0

 75

 Polymer Etching; 50W = 200A/min, 75W = 300A/min, 100W = 400A/min

 

Chamber C

This is a list of active recipes. The table uses the convention Break Through/Main Etch/Over Etch to define the step parameters.

Recipe

Pressure

in mT

Power

W

B Field

Gauss

CF4 sccm

Cl2

sccm

HBr

sccm

HeO2

sccm

NF3

sccm

Comments

CH.C POLY ETCH

100/100/100

250/250/90

0/40/50

35/0/0

0/22/15

0/18/30

0/0/6

0/0/0

Original from Applied

Process Monitoring and Qualification Procedure  

Purpose

To provide verification and trend of the standard programs including etch rates of AlSi, oxide, Si and photoresist, selectivity of those materials, and wafer-to-wafer and within-a-wafer uniformity of etch.

Frequency of the Test

To be completed after major maintenance such as cleaning or gas line replacement or on a set schedule to be determined or as needed based on user feedback.

Documentation of Results

To be posted in the equipment archive for p5000etch on the SNF website via coral and in a file or webpage available to users in data or chart format.

Historic Chamber Qualification Data

Qualifications for all three chambers are given for quick reference.

Chamber A (metal)

15 Jan 2014

After annual winter shutdown.

Al/Si

Etch Rate

PR (3612)

Etch Rate

Oxide

Etch Rate

Single Crystal

Etch Rate

Al/Si : PR

Selectivity

Al/Si : Ox

Selectivity

Al/Si : Si

Selectivity

2358A/min

(may need to be re-tested)

3087

596

2860

0.76 : 1

4.0 : 1

0.82 : 1

 

 15 Jan 2013

After annual winter shutdown.

Al/Si

Etch Rate

PR (3612)

Etch Rate

Oxide

Etch Rate

Single Crystal

Etch Rate

Al/Si : PR

Selectivity

Al/Si : Ox

Selectivity

Al/Si : Si

Selectivity

5614A/min

3479

546

3341

1.6 : 1

11.3 : 1

1.7 : 1

30 Mar 2012

 Quick check of metal etch;

Al etch rate = 5277A/min without Break Though Step

Al etch rate = 5598A/min with Break Though Step

  18 Feb 2011

Al/Si

Etch Rate

PR (3612)

Etch Rate

Oxide

Etch Rate

Single Crystal

Etch Rate

Al/Si : PR

Selectivity

Al/Si : Ox

Selectivity

Al/Si : Si

Selectivity

1.083um/min

4138

641

3495

2.6 : 1

16.9 : 1

3.1 : 1

 

23 Sept 2010

Al/Si

Etch Rate

PR (3612)

Etch Rate

Oxide

Etch Rate

Single Crystal

Etch Rate

Al/Si : PR

Selectivity

Al/Si : Ox

Selectivity

Al/Si : Si

Selectivity

7482A/min

3951

897

3988

1.9 : 1

8.4 : 1

1.9 : 1

 

20 Jan 2010

Al/Si

Etch Rate

PR (3612)

Etch Rate

Oxide

Etch Rate

Single Crystal

Etch Rate

Al/Si : PR

Selectivity

Al/Si : Ox

Selectivity

Al/Si : Si

Selectivity

7684

7395 (20 Jan 2010)

4528

1255

4039

1.7 : 1

6.1 : 1

1.9 : 1

 

23 Oct 2009

Al/Si

Etch Rate

PR (3612)

Etch Rate

Oxide

Etch Rate

Single Crystal

Etch Rate

Al/Si : PR

Selectivity

Al/Si : Ox

Selectivity

Al/Si : Si

Selectivity

7333

3398

1240

3424

2.2 : 1

6.0 : 1

2.1 : 1

 

2 Oct 2009

Al/Si

Etch Rate

PR (3612)

Etch Rate

Oxide

Etch Rate

Single Crystal

Etch Rate

Al/Si : PR

Selectivity

Al/Si : Ox

Selectivity

Al/Si : Si

Selectivity

7320

3224

1306

-

2.3 : 1

5.6 : 1

-

 

Chamber B (oxide)

23 May 2014

Quick Check after user report of increased etch rate of PR, sel 1:1

Oxide ER = 2990A/min

PR ER = 2138A/min

Sel = 1.4 : 1

15 Jan 2014

Thermal Ox

Etch Rate

PR (3612)

Etch Rate

Nitride

Etch Rate

Poly Si

Etch Rate

Single Crystal

Etch Rate

Ox : PR

Selectivity

Ox : Nitride

Selectivity

Nitride : PR

Selectivity

3229

1874

>2324

1108

 863

1.7: 1

>1.4 : 1

>1.2 : 1

15 Jan 2013

Thermal Ox

Etch Rate

PR (3612)

Etch Rate

Nitride

Etch Rate

Poly Si

Etch Rate

Single Crystal

Etch Rate

Ox : PR

Selectivity

Ox : Nitride

Selectivity

Nitride : PR

Selectivity

3647

1925

 799

1.9: 1

24 Feb 2012

Thermal Ox

Etch Rate

PR (3612)

Etch Rate

Nitride

Etch Rate

Poly Si

Etch Rate

Single Crystal

Etch Rate

Ox : PR

Selectivity

Ox : Nitride

Selectivity

Nitride : PR

Selectivity

3530

1800

1010

 750

2.0 : 1

 

18 Feb 2011

Ox

Etch Rate

PR (3612)

Etch Rate

Nitride

Etch Rate

Poly Si

Etch Rate

Single Crystal

Etch Rate

Ox : PR

Selectivity

Ox : Nitride

Selectivity

Nitride : PR

Selectivity

3559

1728

2994

1079

 724

2.1 : 1

1.2 : 1

1.7 : 1

23 Oct 2009

Ox

Etch Rate

PR (3612)

Etch Rate

Nitride

Etch Rate

Single Crystal

Etch Rate

Ox : PR

Selectivity

Ox : Nitride

Selectivity

Nitride : PR

Selectivity

3063

1521

3024

-

2.0 : 1

1.01 : 1

2.0 : 1

 

24 Sept 2009

Comments; after CH3 cylinder replacement- new vendor.

Ox

Etch Rate

PR (3612)

Etch Rate

Nitride

Etch Rate

Single Crystal

Etch Rate

Ox : PR

Selectivity

Ox : Nitride

Selectivity

Nitride : PR

Selectivity

3131

1605

3032

1.95 : 1

1.03 : 1

1.89 : 1

 

Chamber C (Poly, Si)

27 Mar 2014- quick check after chiller unclogged

Poly

Etch Rate

PR (3612)

Etch Rate

Ox

Etch Rate

Single Crystal

Etch Rate

Poly : PR

Selectivity

Poly : Ox

Selectivity

Poly : Si

Selectivity

529

2320

 

15 Jan 2014

Poly

Etch Rate

PR (3612)

Etch Rate

Ox

Etch Rate

Single Crystal

Etch Rate

Poly : PR

Selectivity

Poly : Ox

Selectivity

Poly : Si

Selectivity

2961

434

2312

6.8 : 1

1.3 : 1

 

22 April 2013

Poly

Etch Rate

PR (3612)

Etch Rate

Ox

Etch Rate

Single Crystal

Etch Rate

Poly : PR

Selectivity

Poly : Ox

Selectivity

Poly : Si

Selectivity

2997

269

11 : 1

 

15 Jan 2013

Poly

Etch Rate

PR (3612)

Etch Rate

Ox

Etch Rate

Single Crystal

Etch Rate

Poly : PR

Selectivity

Poly : Ox

Selectivity

Poly : Si

Selectivity

3352

592

306

2674

5.7 : 1

7.4 : 1

1.3 : 1

 

29 March 2012

Poly

Etch Rate

PR (3612)

Etch Rate

Ox

Etch Rate

Single Crystal

Etch Rate

Poly : PR

Selectivity

Poly : Ox

Selectivity

Poly : Si

Selectivity

2920

603

306

2404

4.8 : 1

9.5 : 1

1.2 : 1

 

16 Feb 2011

Poly

Etch Rate

PR (3612)

Etch Rate

Ox

Etch Rate

Single Crystal

Etch Rate

Poly : PR

Selectivity

Poly : Ox

Selectivity

Poly : Si

Selectivity

4740

597

442

3021

7.9 : 1

10.7 : 1

1.6 : 1

 

10 Jan 2010

Poly

Etch Rate

PR (3612)

Etch Rate

Ox

Etch Rate

Single Crystal

Etch Rate

Poly : PR

Selectivity

Poly : Ox

Selectivity

Poly : Si

Selectivity

3147

467

440

2302

6.7 : 1

7.2 : 1

1.4 : 1

 

 

23 Oct 2009

Poly

Etch Rate

PR (3612)

Etch Rate

Ox

Etch Rate

Single Crystal

Etch Rate

Poly : PR

Selectivity

Poly : Ox

Selectivity

Poly : Si

Selectivity

3181

627

545

2482

5.1 : 1

5.8 : 1

1.3 : 1

 

2 Oct 2009

Poly

Etch Rate

PR (3612)

Etch Rate

Ox

Etch Rate

Single Crystal

Etch Rate

Poly : PR

Selectivity

Poly : Ox

Selectivity

Poly : Si

Selectivity

2819

559

447

-

5.0 : 1

6.3 : 1

-

Procedure

Chamber A

  1. Test wafers: 10,000A Al on HfO2 on Si, 1000A SiO2, and bare Si. Al and bare Si wafers patterned with 1.6um 3612 PR with SUMO Mask 2.0.
  2. Measure and record resist and oxide thickness using nanospec.
  1. Etch wafers using recipe CH.A METAL.  BT=6 sec, ME = 60 sec and OE = 0 sec.
  1. Measure and record resist and oxide thickness using nanospec.
  1. Strip the resist off the PR on Si wafer via matrix.
  1. Measure and record step height of Si and Al wafers using alphastep.
  1. All measurements recorded on SUMO Qual Data sheets, which are automatically synced to the wiki. For P5000A, the selectivities that will be need to be calculated (the data sheet does this automatically) are Al : Si, Al : PR, and Al : Oxide.
  2. Verify the results fall within the expected values listed on the wiki, and make a comment on Badger when all results are gathered.

Chamber B

  1. Test Wafers: 7000A SiN, 10,000 SiO2, and bare Si. Bare Si patterned with 1.6um 3612 PR with SUMO Mask 2.0.
  2. Measure and record resist and nitride thickness using nanospec.
  1. Measure oxide thickness using Woollam.
  1. Etch all three wafers using recipe CH.B OXIDE. No BT, ME = 60 sec and OE = 0 sec.
  1. Measure and record resist and nitride thickness using nanospec.
  1. Measure and record oxide thickness using Woollam.
  1. Strip the resist off the PR on Si wafer via matrix.
  1. Measure and record step height of Si wafer using alphastep.
  1. All measurements recorded on SUMO Qual Data sheets, which are automatically synced to the wiki. For P5000B, the selectivities that must be calculated (the data sheet does this automatically) are Oxide : Si, Oxide : PR, and Oxide : Nitride.
  2. Verify the results fall within the expected values, and make a comment on Badger when all results are gathered.

Chamber C

  1. Test Wafers: 1000A SiO2, bare Si. Bare Si wafer patterned with 1.6um 3612 PR with SUMO Mask 2.0.
  2. Measure and record resist and oxide thickness using nanospec.
  1. Etch the wafer using recipe CH.C POLY ETCH.  BT = 6 sec, ME = 60 sec, and OE = 0 sec.
  1. Measure and record resist and oxide thickness using nanospec.
  1. Strip the resist off the PR on Si wafer via matrix.
  1. Measure and record step height of Si wafer using alphastep.
  1. All measurements recorded on SUMO Qual Data sheets, which are automatically synced to the wiki. For P5000B, the selectivities that must be calculated (the data sheet does this automatically) are Si : PR, and Si : Oxide.
  2. Verify the results fall within the expected values, and make a comment on Badger when all results are gathered.

Recent Monitor results

 P5000 Chamber A results

      

P5000 Chamber B results

P5000 Chamber C results