State-of-the-Art High Resolution Low Voltage Electron Beam Lithography and Metrology tool. Suitable for the research and development of Nanolithographic structures for micro and nano-Electronic, MEMS, Photonic, Plasmonic, and Integrated Optical Devices. * Direct Write E-beam exposure for chips and wafers to 150 mm diameter. * Ultimate resolution specified to 20 nm guaranteed with sub-10 - 15 nm features possible. * Accurate Write Field to Write Field Stitching and Layer 1 to Layer 2 Overlay specified to <40 nm with sub-20 nm typical. (mean + 3sigma values) * Ultra high resolution, low voltage SEM inspection with Ultra-high efficiency SE detectors with both In-lens and normal SE detection mode. *Laser Interferometer Stage w/ 2 nm resolution integrated to an advanced sample navigation and metrology software package. *Operates between 0.3 and 30 keV with user selectable Apertures to control Beam Current. * 10 MHz ELPHY PLUS FE pattern generator. * NanoPECS Proximity Effect Correction Software. *Digital SEM imaging with 1 - 2 nm resolution at most acceleration voltages.
If you would like more information or training on the Raith, please contact Swaroop Kommera (skommera at stanford dot edu).
SNF's Raith has acquired the FBMS upgrade which enables "continuous writing without stitching errors." Here is an example of this capability as applied to zone plates.
SNF's Raith has acquired the FBMS upgrade which enables "continuous writing without stitching errors." Here is an applications note of this capability as used for fabricating waveguides.